Latest developments in Blue-Violet Laser Diodes grown by Molecular Beam Epitaxy

ABSTRACTWe report on recent results obtained for InGaN multiple quantum well laser diodes grown by ammonia based Molecular Beam Epitaxy. The laser diodes were grown on freestanding GaN substrates and operated at room temperature under pulsed current injection conditions. For devices with improved p-type doping a threshold current density of 6.7kA.cm−2 was measured for a current pulse duration of 200ns and an operating temperature of 3.9°C. A duty cycle up to 50% with a pulsed injection current duration of 500μs was also achieved at 3.9°C.