Electroluminescence from GalnN Quantum Wells Grown on Non-(0001) Facets of Selectively Grown GaN Stripes

ABSTRACTNon (0001) GalnN QWs have been grown by low pressure MOVPE on side facets of triangular shaped selectively grown GaN stripes. By analysing low temperature photo- and cathodoluminescence and room temperature electroluminescence, we found strong indications, that both, In and Mg are less efficiently incorporated on these side facets compared to the common (0001) plane with even lower efficiency for stripes running along (1–100) compared to (11–20). Nevertheless, we observed strong light emission from these quantum wells, supposed to be at least partly caused by the reduced piezo-electric field.

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Molecule-Based Magnets—An Overview

MRS Bulletin ◽

10.1557/mrs2000.221 ◽

2000 ◽

Vol 25 (11) ◽

pp. 21-30 ◽

Cited By ~ 115

Author(s):

Joel S. Miller ◽

Arthur J. Epstein

Keyword(s):

Low Temperature ◽

Vapor Deposition ◽

Room Temperature ◽

Chemical Vapor ◽

Magnetic Ordering ◽

Low Density ◽

Materials Properties ◽

The Common ◽

New Processing ◽

Very High

Molecule-based magnets are a broad, emerging class of magnetic materials that expand the materials properties typically associated with magnets to include low density, transparency, electrical insulation, and low-temperature fabrication, as well as combine magnetic ordering with other properties such as photoresponsiveness. Essentially all of the common magnetic phenomena associated with conventional transition-metal and rare-earth-based magnets can be found in molecule-based magnets. Although discovered less than two decades ago, magnets with ordering temperatures exceeding room temperature, very high (∼27.0 kOe or 2.16 MA/m) and very low (several Oe or less) coercivities, and substantial remanent and saturation magnetizations have been achieved. In addition, exotic phenomena including photoresponsiveness have been reported. The advent of molecule-based magnets offers new processing opportunities. For example, thin-film magnets can be prepared by means of low-temperature chemical vapor deposition and electrodeposition methods.

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Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature

Advanced Science ◽

10.1002/advs.201903400 ◽

2020 ◽

Vol 7 (13) ◽

pp. 1903400

Author(s):

Xingchen Liu ◽

Ning Tang ◽

Shixiong Zhang ◽

Xiaoyue Zhang ◽

Hongming Guan ◽

...

Keyword(s):

Electric Field ◽

Quantum Wells ◽

Room Temperature ◽

Spin Dynamics ◽

Polarization Electric Field

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The Structural, Electronic, and Optical Properties of Ge/Si Quantum Wells: Lasing at a Wavelength of 1550 nm

Nanomaterials ◽

10.3390/nano10051006 ◽

2020 ◽

Vol 10 (5) ◽

pp. 1006

Author(s):

Hongqiang Li ◽

Jianing Wang ◽

Jinjun Bai ◽

Shanshan Zhang ◽

Sai Zhang ◽

...

Keyword(s):

Optical Properties ◽

Quantum Wells ◽

Room Temperature ◽

Light Emission ◽

Single Mode ◽

Group Iv ◽

Light Power ◽

Fully Integrated ◽

Electronic And Optical Properties ◽

Novel Approach

The realization of a fully integrated group IV electrically driven laser at room temperature is an essential issue to be solved. We introduced a novel group IV side-emitting laser at a wavelength of 1550 nm based on a 3-layer Ge/Si quantum well (QW). By designing this scheme, we showed that the structural, electronic, and optical properties are excited for lasing at 1550 nm. The preliminary results show that the device can produce a good light spot shape convenient for direct coupling with the waveguide and single-mode light emission. The laser luminous power can reach up to 2.32 mW at a wavelength of 1550 nm with a 300-mA current. Moreover, at room temperature (300 K), the laser can maintain maximum light power and an ideal wavelength (1550 nm). Thus, this study provides a novel approach to reliable, efficient electrically pumped silicon-based lasers.

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Solvent-assisted low pressure room temperature lamination of low temperature cofirable ceramic green tapes for formation of embedded micro channels

Microsystem Technologies ◽

10.1007/s00542-009-0989-9 ◽

2009 ◽

Vol 16 (8-9) ◽

pp. 1501-1506 ◽

Cited By ~ 8

Author(s):

Xuechuan Shan ◽

H. P. Maw ◽

C. W. Lu

Keyword(s):

Low Temperature ◽

Room Temperature ◽

Low Pressure ◽

Micro Channels

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Room temperature green light emission from nonpolar cubic InGaN∕GaN multi-quantum-wells

Applied Physics Letters ◽

10.1063/1.2475564 ◽

2007 ◽

Vol 90 (7) ◽

pp. 071903 ◽

Cited By ~ 44

Author(s):

Shunfeng Li ◽

Jörg Schörmann ◽

Donat J. As ◽

Klaus Lischka

Keyword(s):

Quantum Wells ◽

Room Temperature ◽

Light Emission ◽

Green Light ◽

Green Light Emission

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OPTICAL PROPERTIES OF CdTe/ZnTe ULTRATHIN QUANTUM WELLS GROWN BY ATOMIC LAYER EPITAXY

Surface Review and Letters ◽

10.1142/s0218625x02004189 ◽

2002 ◽

Vol 09 (05n06) ◽

pp. 1667-1670 ◽

Cited By ~ 7

Author(s):

M. GARCÍA-ROCHA ◽

I. HERNÁNDEZ-CALDERÓN

Keyword(s):

Optical Properties ◽

Low Temperature ◽

Quantum Wells ◽

Gaas Substrate ◽

Room Temperature ◽

Diffusion Length ◽

Substrate Surface ◽

Atomic Layer ◽

Atomic Layer Epitaxy ◽

Low Temperature Photoluminescence

Ultrathin quantum wells (UTQWs) of CdTe within ZnTe barriers were successfully grown by atomic layer epitaxy (ALE) on GaAs(001) substrates. ALE growth of CdTe was performed by alternate exposure of the substrate surface to individual fluxes of Cd and Te. Two different samples with 2-monolayer (ML) (substrate temperature Ts= 270° C ) and 4 ML (Ts = 290° C ) CdTe QWs were grown. Low temperature photoluminescence (PL) experiments exhibited intense and sharp peaks associated to the 2 ML QWs at 2.26 eV. In the case of the nominally 4-ML-thick QW the PL spectrum presented an intense peak around 2.13 eV and two weak features around 2.04 and 1.91 eV. The first peak is attributed to ~ 3 ML QW and the second one to ~ 4 ML QW. The dominance of the 3 ML peak is mainly attributed to Cd loss in the QW due to its substitution by Zn atoms. Due to a high diffusion length of the photogenerated carriers in the barriers, quite weak signals from the ZnTe barriers were observed in both cases. Room temperature (RT) photoreflectance (PR) spectra showed contributions from the CdTe UTQWs, the ZnTe barriers, and the GaAs substrate.

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