Molecule-Based Magnets—An Overview

MRS Bulletin ◽  
2000 ◽  
Vol 25 (11) ◽  
pp. 21-30 ◽  
Author(s):  
Joel S. Miller ◽  
Arthur J. Epstein

Molecule-based magnets are a broad, emerging class of magnetic materials that expand the materials properties typically associated with magnets to include low density, transparency, electrical insulation, and low-temperature fabrication, as well as combine magnetic ordering with other properties such as photoresponsiveness. Essentially all of the common magnetic phenomena associated with conventional transition-metal and rare-earth-based magnets can be found in molecule-based magnets. Although discovered less than two decades ago, magnets with ordering temperatures exceeding room temperature, very high (∼27.0 kOe or 2.16 MA/m) and very low (several Oe or less) coercivities, and substantial remanent and saturation magnetizations have been achieved. In addition, exotic phenomena including photoresponsiveness have been reported. The advent of molecule-based magnets offers new processing opportunities. For example, thin-film magnets can be prepared by means of low-temperature chemical vapor deposition and electrodeposition methods.

2005 ◽  
Vol 872 ◽  
Author(s):  
J.G. Fleming ◽  
Michael Baker ◽  
David Luck

AbstractIn this paper we describe an oxide molded tungsten process applied to the fabrication of a novel latching relay. The steps in the process are: deposition of a sacrificial oxide, patterning of the oxide, filling of the resulting mold with a blanket film of tungsten using chemical vapor deposition (CVD), and then the removal and planarization of excess tungsten through chemical mechanical polishing (CMP). The process for the incorporation of dielectric isolation has also been developed. The resulting tungsten structures are under high tensile stress, which appears to be compensated in process by the compressive stress of the oxide mold. All the steps are low temperature and the entire process is backend CMOS compatible. This process has been used to fabricate a latching relay which relies on the internal stress of the tungsten and always generates force in a pulling mode. Parts have been successfully fabricated and tested, the devices generate very high forces for a MEMS device and give reasonable contact resistances even without noble metal contacts.


1992 ◽  
Vol 282 ◽  
Author(s):  
Paul F. Seidler ◽  
Steven P. Kowalczyk ◽  
Mark M. Banaszak Holl ◽  
John J. Yurkas ◽  
Maurice H. Norcott ◽  
...  

ABSTRACTSubstrate-selective, low-temperature chemical vapor deposition of high quality gold filmswas obtained with the new precursor ethyl(trimethylphosphine)gold(I) in an ultrahigh vacuum reactor designed to handle wafers up to 3 inches in diameter. Growth behavior at temperatures as low as room temperature as well as substrate pre-cleaning procedures are presented. Activation energies of 35.1 ± 0.4 kcal mol−1 and 18.3 ± 0.7 kcal mol−1 were found for growth of gold films on gold and copper substrates, respectively.


1999 ◽  
Vol 557 ◽  
Author(s):  
Xiao Liu ◽  
R.O. Pohl ◽  
R.S. Crandall

AbstractWe observe an increase of the low-temperature internal friction of hydrogenated amorphous silicon prepared by both hot-wire and plasma-enhanced chemical-vapor deposition after extended light-soaking at room temperature. This increase, and the associated change in sound velocity, can be explained by an increase of the density of two-level tunneling states, which serves as a measure of the lattice disorder. The amount of increase in internal friction is remarkably similar in both types of films although the amount and the microstructure of hydrogen are very different. Experiments conducted on a sample prepared by hot-wire chemical-vapor deposition show that this change anneals out gradually at room temperature in about 70 days. Possible relation of the light-induced changes in the low-temperature elastic properties to the Staebler-Wronski effect is discussed.


2021 ◽  
Vol 7 (16) ◽  
pp. eabf7358
Author(s):  
Meng Peng ◽  
Runzhang Xie ◽  
Zhen Wang ◽  
Peng Wang ◽  
Fang Wang ◽  
...  

Blackbody-sensitive room-temperature infrared detection is a notable development direction for future low-dimensional infrared photodetectors. However, because of the limitations of responsivity and spectral response range for low-dimensional narrow bandgap semiconductors, few low-dimensional infrared photodetectors exhibit blackbody sensitivity. Here, highly crystalline tellurium (Te) nanowires and two-dimensional nanosheets were synthesized by using chemical vapor deposition. The low-dimensional Te shows high hole mobility and broadband detection. The blackbody-sensitive infrared detection of Te devices was demonstrated. A high responsivity of 6650 A W−1 (at 1550-nm laser) and the blackbody responsivity of 5.19 A W−1 were achieved. High-resolution imaging based on Te photodetectors was successfully obtained. All the results suggest that the chemical vapor deposition–grown low-dimensional Te is one of the competitive candidates for sensitive focal-plane-array infrared photodetectors at room temperature.


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