Ambipolar injection in a submicron channel light-emitting tetracene transistor with distinct source and drain contacts

2004 ◽  
Vol 846 ◽  
Author(s):  
J. Reynaert ◽  
D. Cheyns ◽  
D. Janssen ◽  
V. I. Arkhipov ◽  
G. Borghs ◽  
...  

ABSTRACTOver the last decade, organic semiconductor thin film transistors have been the focus of many research groups because of their potential application in low-cost integrated circuits. Recently, an organic light-emitting field-effect transistor (OLEFET) was reported. In an OLEFET structure, optimal injection of both holes and electrons into the light-emitting layer are required for maximum quantum efficiency, whereas the gate serves as a controlling electrode. In this work, we achieved an OLFET structure with interdigitated hole-injecting Au and electron-injecting Ca contacts within a submicrometer channel length. Both contacts are bottom contacts to the upper-lying tetracene organic semiconductor. The study of IV-characteristics and light emission from these devices shined light on the underlying physics of the OLEFETs.

2006 ◽  
Vol 965 ◽  
Author(s):  
Naotoshi Suganuma ◽  
Noriyuki Shimoji ◽  
Yoshiaki Oku ◽  
Kazumi Matsushige

ABSTRACTWe have devised a novel organic light-emitting transistor (OLET) with PN-hetero-boundary combined with hole and electron transport materials along carrier channels. In this device, a clear modulation of the current and luminance with the gate voltage is observed. The luminance of 100 cd/m2 or more has been observed at the source-source voltage of 15 V with the turn-on voltage of 10 V or less, which is lower than that of OLETs based on a single organic material. We have implemented the horizontal PN-hetero-boundary structure for the first time by using the photolithographic patterning of the organic semiconductor thin-films. This patterning technique can be applied to fabrication of not only organic light-emitting transistors we report in this paper but also organic integrated circuits or organic displays.


2007 ◽  
Vol 22 (11) ◽  
pp. 2982-2986 ◽  
Author(s):  
Naotoshi Suganuma ◽  
Noriyuki Shimoji ◽  
Yoshiaki Oku ◽  
Kazumi Matsushige

The authors have devised a novel organic light-emitting transistor (OLET) with a PN-heteroboundary combined with hole and electron transport materials (in other words, p-type and n-type organic semiconductors) along carrier channels. In this device, a clear modulation of the current and luminance with the gate voltage was observed. A luminance of 100 cd/m2 or more has been observed at the source–source voltage of 15 V with the turn-on voltage of 10 V or less, which is lower than that of OLETs based on a single organic material. The horizontal PN-heteroboundary structure has been implemented for the first time by using the photolithographic patterning of organic semiconductor thin films. This patterning technique can be applied to the fabrication of not only the OLETs reported in this work, but also to organic integrated circuits or organic displays.


2013 ◽  
Vol 17 (05) ◽  
pp. 351-358 ◽  
Author(s):  
Mohammad Janghouri ◽  
Ezeddin Mohajerani ◽  
Mostafa M. Amini ◽  
Naser Safari

A method for obtaining red emission from an organic-light emitting diode has been developed by dissolving red and yellow dyes in a common solvent and thermally evaporating the mixture in a single furnace. Dichlorido-bis(5,7-dichloroquinolin-8-olato)tin(IV) complex ( Q2SnCl2 , Q = 5,7-dichloro-8-hydroxyquinoline) has been synthesized for using as a fluorescent material in organic light-emitting diodes (OLEDs). The electronic states HOMO (Highest Occupied Molecular Orbital)/LUMO (Lowest Occupied Molecular Orbital) energy levels explored by means of cyclic voltammetry measurements. A device with fundamental structure of ITO/PEDOT:PSS (55nm)/PVK (90nm)/ Q2SnCl2/Al (180nm) was fabricated and its electroluminescence performance at various thicknesses of light emitting layer (LEL) of Q2SnCl2 is reported. By following this step, an optimal thickness for the doping effect was also identified and explained. Finally a device with fundamental structure of ITO/PEDOT:PSS (55nm)/PVK (90nm)/meso-tetraphenylporphyrin (TPP): Q2SnCl2 (75nm)/ Al (180nm) was fabricated and its electroluminescence performance at various concentrations of dye has been investigated. It is shown that this new method is promising candidate for fabrication of low cost OLEDs at more homogeneous layer.


2005 ◽  
Vol 98 (7) ◽  
pp. 074506 ◽  
Author(s):  
Takahito Oyamada ◽  
Hiroyuki Uchiuzou ◽  
Seiji Akiyama ◽  
Yoshiaki Oku ◽  
Noriyuki Shimoji ◽  
...  

2019 ◽  
Vol 30 (11) ◽  
pp. 1969-1973 ◽  
Author(s):  
Bing Yang ◽  
Jianfeng Zhao ◽  
Zepeng Wang ◽  
Zhenlin Yang ◽  
Zongqiong Lin ◽  
...  

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