Atomic-Scale Physics and Modeling of Schottky Barrier Effect in Carbon Nanotube Nanoelectronics

2004 ◽  
Vol 858 ◽  
Author(s):  
Yongqiang Xue
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Electron Transport ◽  
Transport Properties ◽  
Schottky Barrier ◽  
Channel Length ◽  
Atomic Scale ◽  
Barrier Effect ◽  
Metal Electrodes ◽  
Self Consistent

ABSTRACTWe present an atomistic self-consistent study of the electronic and transport properties of semiconducting carbon nanotubes in contact with metal electrodes at different contact geometries. We analyze the Schottky barrier effect at the metal-nanotube interface by examining the electrostatics, the band line up and the conductance of the metal-nanotube wire-metal junction as a function of the nanotube channel length, which leads to an effective decoupling of interface and bulk effects in electron transport through nanotube junction devices.

Characterization of Contact Resistance between Carbon Nanotubes Film and Metal Electrodes

2013 ◽  
Vol 683 ◽  
pp. 238-241
Author(s):  
Ki Bong Han ◽  
Yong Ho Choi
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Contact Resistance ◽  
Chemical Properties ◽  
Metal Electrode ◽  
Metal Contacts ◽  
Metal Electrodes ◽  
3 Dimensional ◽  
Current Path ◽  
Classical Technique

Carbon nanotube has attracted great research attentions due to its outstanding electrical, physical, mechanical, chemical properties. Based on its excellent properties, the carbon nanotube is promising nanoscale material for novel electrical, mechanical, chemical, and biological devices and sensors. However, it is very difficult to control the structure of carbon nanotube during synthesis. A carbon nanotubes film has 3 dimensional structures of interwoven carbon nanotubes as well as unique properties such as transparency, flexibility and good electrical conductivity. More importantly, the properties of carbon nanotubes are ensemble averaged in this formation. In this research, we study the contact resistance between carbon nanotubes film and metal electrode. For most of electrical devices using carbon nanotubes film, it is necessary to have metal electrodes on the film for current path. A resistance at the contact lowers the electrical efficiencies of the devices. Therefore, it is important to measure and characterize the contact resistance and lower it for better efficiencies. The device demonstrated in this study using classical technique for metal contacts provides relatively reliable contact resistance measurements for carbon nanotubes film applications.

Self-aligned Split Gate Electrodes Fabricated on Suspended Carbon Nanotubes

2002 ◽  
Vol 741 ◽  
Author(s):  
S.-B. Lee ◽  
L.A.W. Robinson ◽  
K.B.K. Teo ◽  
M. Chhowalla ◽  
G.A.J. Amaratunga ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Multiwalled Carbon Nanotube ◽  
Metal Electrodes ◽  
Multiwalled Carbon ◽  
Gate Electrodes ◽  
Lithography Step ◽  
Lift Off ◽  
And Control ◽  
Contact Electrodes

ABSTRACTWe describe the fabrication of self-aligned split gate electrodes on suspended multiwalled carbon nanotube structures. A suspended multiwalled carbon nanotube structure was used as an evaporation mask for the deposition of metal electrodes resulting in the formation of discontinuous wire deposition. The metal deposits on the nanotubes are removed with lift-off due to the poor adhesion of metal to the nanotube surface. Using Al sacrificial layers, it was possible to fabricate self-aligned contact electrodes and control electrodes nanometers from the suspended carbon nanotubes with a single lithography step. It was also shown that the fabrication technique may also be used to form nano-gaped contact electrodes. The technique should prove useful for the fabrication of nano-electromechanical systems.

CONTACT EFFECTS ON TRANSPORT PROPERTIES OF SEMICONDUCTING CARBON NANOTUBES CONNECTED TO METALLIC ELECTRODES

2006 ◽  
Vol 13 (02n03) ◽  
pp. 309-311
Author(s):  
NOBUHIKO KOBAYASHI ◽  
TAISUKE OZAKI ◽  
KENJI HIROSE
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Energy Level ◽  
Transport Properties ◽  
Transmission Spectrum ◽  
First Principles ◽  
Band Gap Energy ◽  
First Principles Calculation ◽  
Gap Energy ◽  
Metallic Electrodes

We present the first-principles calculation of transport properties of a semiconducting carbon nanotube connected to aluminum metallic electrodes. The transmission spectrum of the nanotube shows a decrease in the band-gap energy level but has a finite value due to the hybridization of the metallic states of the electrodes.

Carbon nanotubes to outperform metal electrodes in perovskite solar cells via dopant engineering and hole-selectivity enhancement

2020 ◽  
Vol 8 (22) ◽  
pp. 11141-11147 ◽  
Author(s):  
Il Jeon ◽  
Ahmed Shawky ◽  
Seungju Seo ◽  
Yang Qian ◽  
Anton Anisimov ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Solar Cells ◽  
Carbon Nanotube ◽  
Perovskite Solar Cells ◽  
Metal Electrode ◽  
Doping Effect ◽  
Triflic Acid ◽  
Metal Electrodes ◽  
Apolar Solvent

Triflic acid dispersed in an apolar solvent exhibited a superior doping effect and stability on carbon nanotube electrodes. The carbon nanotube electrode-based perovskite solar cells exceeded the metal electrode-based counterpart in terms of efficiency.

scholarly journals Theoretical Modelling of Charge Transport Properties of Individual Single-Wall Carbon Nanotubes

2018 ◽  
Vol 5 (3) ◽  
pp. 14-34
Author(s):  
G. Ijeomah ◽  
F. Samsuri ◽  
F. Obite ◽  
M.A. Zawawi
Keyword(s):  
Carbon Nanotubes ◽  
Transport Properties ◽  
Mean Free Path ◽  
Channel Length ◽  
Theoretical Modelling ◽  
Computational Time ◽  
Single Wall Carbon Nanotubes ◽  
Boltzmann Transport ◽  
Ohmic Resistance ◽  
Device Applications

Experimental projection of transport properties of semiconductor devices faces a challenge nowadays. As devices scale to nanometre scale range, the classical transport equations used in current device simulators can no longer be applied. Conversely, the use of a more accurate and better non-equilibrium green function (NEGF) is limited by the fact that it requires excessive quantum of memory and computational time, having quasi-separable matrices that are extremely convoluted to solve. This work exploits the Boltzmann Transport Equation (BTE) to assess the transport properties of carbon nanotubes. Previous works on solving the BTE have employed either a stochastic method or an approximate method, both of which do not possess the necessary properties for practical device applications. Therefore, this work represents the first direct theoretical solution of the BTE for one-dimensional carbon nanotubes that can be utilized for practical device applications. The complete spectrum of transport in CNTs extending from ohmic to high-field through ballistic transmission is examined to delineate plethora of transport properties. The transport for arbitrary values of the electric field is based on the BTE applied to experimental data on CNTs. In the limit of low field, the mobility expressions are obtained in terms of the mean free path (mfp) that is distinctly shorter than the length of the sample. The ohmic resistance is quantized a value of 6.453k-ohms consistent with experimental findings with transmission approaching unity as channel length shrinks below the carrier mfp. The emission of a quantum was observed to lower the saturation velocity that is independent of scattering and hence ballistic. Transition to ballistic domain was found to occur when the channel length is scaled below the ballistic limit that is shown to be the extended version of the long-channel mfp modulated by injections from the contacts, yet the mobility degrades. The mobility degradation is shown to be the cause of resistance quantum in the low-channel length limit. These findings are important in predicting the transport properties of low-dimensional CNTs.

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