Ultra-Fine ZnO Nanobelts and their Photoluminescence Emission

2005 ◽  
Vol 872 ◽  
Author(s):  
Aurangzeb Khan ◽  
Martin E Kordesch
Keyword(s):  
Electrical Properties ◽  
Thermal Evaporation ◽  
Ultra Violet ◽  
Blue Shift ◽  
Near Band Edge ◽  
Optical And Electrical Properties ◽  
Photoluminescence Spectra ◽  
Average Width ◽  
Violet Emission ◽  
Evaporation And Condensation

AbstractUltra-Fine ZnO nanobelts are grown via thermal evaporation and condensation method without the use of any catalyst on the substrates. These nanobelts have an average width of about 5.8 nm. Photoluminescence spectra reveal that there is a blue shift in the near band edge ultra violet emission from 381 nm to 367 nm equal to 124 meV. These ultra-fine nanobelts have been studied for size induced optical and electrical properties.

Nitrogen Effects on Optical and Electrical Properties of Amorphous Carbon

2010 ◽  
Vol 636-637 ◽  
pp. 423-429 ◽  
Author(s):  
M. Fathallah ◽  
N. Alassimi ◽  
N. Alzayed ◽  
R. Gharbi
Keyword(s):  
Electrical Properties ◽  
Amorphous Carbon ◽  
Carbon Nitride ◽  
Gas Mixture ◽  
Optical And Electrical Properties ◽  
Photoluminescence Spectra ◽  
Graphite Target ◽  
Triple Bonds ◽  
C And N ◽  
Amorphous Carbon Nitride

Optical and electrical properties amorphous carbon nitride (a-CN) has been investigated on films deposited by reactive R.F. sputtering source with a graphite target. The amorphous carbon nitride samples were prepared under a gas mixture of nitrogen (N2) and /or Argon (Ar).The optical transitions are governed by the  and * electronic state distributions, related to sp2- and sp1-hybridized C and N atoms. Specific lonepair electronic states arise from groups (CN) with sp1-hybridized C atoms, which may form C≡N triple bonds or —N=C=N— longer chains. Photoluminescence spectra show a maximum around 650 nm. Two conduction regimes at high and low temperature are found in a-CN samples. The corresponding activation energies decrease with the increase of target voltage.

Effects of Annealing in Air on Structure and Properties of Al Films Prepared by Thermal Evaporation

2013 ◽  
Vol 634-638 ◽  
pp. 2458-2461
Author(s):  
Jing Lv
Keyword(s):  
Electrical Properties ◽  
Thermal Evaporation ◽  
Optical And Electrical Properties ◽  
Structure And Properties ◽  
Structure And Morphology ◽  
The Difference ◽  
Quartz Substrates ◽  
Deposited Film

Al films were prepared on quartz substrates by thermal evaporation. The effects of annealing in air on structure and optical and electrical properties have been studied. It is found that the annealing in air will affect on structure and morphology of the films, which results in the difference in the optical and electrical properties. The as-deposited film is amorphous, the films annealed at 200 and 400oC are polycrystalline. After annealed at 600oC, the film was oxidized and changed to porous γ-Al2O3. The film annealed at 200 oC has the maximum reflectance and at 400 oC has the minimum resistivity in all samples. While for the film annealed at 600 oC, the resistivity is close to be infinite, the reflectance is the minimum at wavelength ranging from 400 to 800 nm in all the samples.

scholarly journals Optical and Electrical Properties of Ag-Doped In2S3Thin Films Prepared by Thermal Evaporation

2014 ◽  
Vol 2014 ◽  
pp. 1-4 ◽  
Author(s):  
Peijie Lin ◽  
Sile Lin ◽  
Shuying Cheng ◽  
Jing Ma ◽  
Yunfeng Lai ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Thermal Evaporation ◽  
Xrd Analysis ◽  
Optical And Electrical Properties ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates ◽  
Hall Measurement System

Ag-doped In2S3(In2S3:Ag) thin films have been deposited onto glass substrates by a thermal evaporation method. Ag concentration is varied from 0 at.% to 4.78 at.%. The structural, optical, and electrical properties are characterized using X-ray diffraction (XRD), spectrophotometer, and Hall measurement system, respectively. The XRD analysis confirms the existence of In2S3and AgIn5S8phases. With the increase of the Ag concentration, the band gap of the films is decreased gradually from 2.82 eV to 2.69 eV and the resistivity drastically is decreased from ~103to5.478×10-2 Ω·cm.

scholarly journals Оптические свойства наночастиц CdSe/ZnS в пленках термообработанного поливинилхлорида

2019 ◽  
Vol 53 (4) ◽  
pp. 508
Author(s):  
С.И. Расмагин ◽  
И.К. Новиков
Keyword(s):  
Heat Treatment ◽  
Electrical Properties ◽  
Polymer Composites ◽  
Photoluminescence Intensity ◽  
Optical And Electrical Properties ◽  
Photoluminescence Spectra ◽  
Zns Nanoparticles ◽  
Short Term ◽  
Long Time

AbstractComposites based on polyvinylchloride with incorporated CdSe/ZnS nanoparticles are produced. The optical and electrical properties of the polymer composites containing CdSe/ZnS nanoparticles are studied. The absorption and photoluminescence spectra of the composites are recorded, and their bulk resistivities are measured. The CdSe nanoparticle dimensions are determined. It is established that, upon short-term heat treatment, the photoluminescence intensity increases, whereas upon heating for a long time, the photoluminescence intensity substantially decreases.

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