Structural, optical and electrical properties of crystalline V2O5 films deposited by thermal evaporation and effects of temperature on UV–vis and Raman spectra

Optik ◽  
2017 ◽  
Vol 144 ◽  
pp. 271-280 ◽  
Author(s):  
Ravish K. Jain ◽  
Atul Khanna
Keyword(s):  
Electrical Properties ◽  
Raman Spectra ◽  
Thermal Evaporation ◽  
Optical And Electrical Properties ◽  
Effects Of Temperature

scholarly journals Modulation of Optical and Electrical Characteristics by Laterally Stretching DNAs on CVD-Grown Monolayers of MoS2

2017 ◽  
Vol 2017 ◽  
pp. 1-6 ◽  
Author(s):  
Guru P. Neupane ◽  
Minh Dao Tran ◽  
Hyun Kim ◽  
Jeongyong Kim
Keyword(s):  
Electrical Properties ◽  
Raman Spectra ◽  
Tensile Strain ◽  
Hybrid Structure ◽  
Red Shift ◽  
Electric Mobility ◽  
Hybrid Structures ◽  
Electrical Performance ◽  
Optical And Electrical Properties ◽  
Electrical Characteristics

Monolayer MoS2 (1L-MoS2) is an ideal platform to examine and manipulate two dimensionally confined exciton complexes, which provides a large variety of modulating the optical and electrical properties of 1L-MoS2. Extensive studies of external doping and hybridization exhibit the possibilities of engineering the optical and electrical performance of 1L-MoS2. However, biomodifications of 1L-MoS2 and the characterization and applications of such hybrid structures are rarely reported. In this paper, we present a bio-MoS2 hybrid structure fabricated by laterally stretching strands of DNAs on CVD-grown 1L-MoS2. We observed a strong modification of photoluminescence and Raman spectra with reduced PL intensity and red-shift of PL peak and Raman peaks, which were attributed to electron doping by the DNAs and the presence of tensile strain in 1L-MoS2. Moreover, we observed a significant enhancement of electric mobility in the DNA/1L-MoS2 hybrid compared to that in the pristine 1L-MoS2, which may have been caused by the induced strain in 1L-MoS2.

Effects of Annealing in Air on Structure and Properties of Al Films Prepared by Thermal Evaporation

2013 ◽  
Vol 634-638 ◽  
pp. 2458-2461
Author(s):  
Jing Lv
Keyword(s):  
Electrical Properties ◽  
Thermal Evaporation ◽  
Optical And Electrical Properties ◽  
Structure And Properties ◽  
Structure And Morphology ◽  
The Difference ◽  
Quartz Substrates ◽  
Deposited Film

Al films were prepared on quartz substrates by thermal evaporation. The effects of annealing in air on structure and optical and electrical properties have been studied. It is found that the annealing in air will affect on structure and morphology of the films, which results in the difference in the optical and electrical properties. The as-deposited film is amorphous, the films annealed at 200 and 400oC are polycrystalline. After annealed at 600oC, the film was oxidized and changed to porous γ-Al2O3. The film annealed at 200 oC has the maximum reflectance and at 400 oC has the minimum resistivity in all samples. While for the film annealed at 600 oC, the resistivity is close to be infinite, the reflectance is the minimum at wavelength ranging from 400 to 800 nm in all the samples.

scholarly journals Optical and Electrical Properties of Ag-Doped In2S3Thin Films Prepared by Thermal Evaporation

2014 ◽  
Vol 2014 ◽  
pp. 1-4 ◽  
Author(s):  
Peijie Lin ◽  
Sile Lin ◽  
Shuying Cheng ◽  
Jing Ma ◽  
Yunfeng Lai ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Thermal Evaporation ◽  
Xrd Analysis ◽  
Optical And Electrical Properties ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates ◽  
Hall Measurement System

Ag-doped In2S3(In2S3:Ag) thin films have been deposited onto glass substrates by a thermal evaporation method. Ag concentration is varied from 0 at.% to 4.78 at.%. The structural, optical, and electrical properties are characterized using X-ray diffraction (XRD), spectrophotometer, and Hall measurement system, respectively. The XRD analysis confirms the existence of In2S3and AgIn5S8phases. With the increase of the Ag concentration, the band gap of the films is decreased gradually from 2.82 eV to 2.69 eV and the resistivity drastically is decreased from ~103to5.478×10-2 Ω·cm.

Ultra-Fine ZnO Nanobelts and their Photoluminescence Emission

2005 ◽  
Vol 872 ◽  
Author(s):  
Aurangzeb Khan ◽  
Martin E Kordesch
Keyword(s):  
Electrical Properties ◽  
Thermal Evaporation ◽  
Ultra Violet ◽  
Blue Shift ◽  
Near Band Edge ◽  
Optical And Electrical Properties ◽  
Photoluminescence Spectra ◽  
Average Width ◽  
Violet Emission ◽  
Evaporation And Condensation

AbstractUltra-Fine ZnO nanobelts are grown via thermal evaporation and condensation method without the use of any catalyst on the substrates. These nanobelts have an average width of about 5.8 nm. Photoluminescence spectra reveal that there is a blue shift in the near band edge ultra violet emission from 381 nm to 367 nm equal to 124 meV. These ultra-fine nanobelts have been studied for size induced optical and electrical properties.

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