Oxidation Kinetics of Ge+-Ion Implanted Si
Keyword(s):
AbstractKinetic data are provided for oxidation of Ge+-ion implanted Si over a range of temperature and oxidation ambient. Oxidation rates were enhanced in implanted Si and, over most of the range studied, found to be consistent with a modified reaction at the oxide/Si interface. However, this reaction is shown to be more complex than in virgin Si and could not be represented by a single activation energy. An anomalous behavior is exhibited at low-temperature for steam oxidation. This behavior is characterized and the mechanisms which are responsible are discussed.
1980 ◽
Vol 45
(12)
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pp. 3402-3407
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Keyword(s):
1977 ◽
Vol 124
(3)
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pp. 380-387
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Keyword(s):
2013 ◽
Vol 825
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pp. 238-241
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1979 ◽
Vol 44
(12)
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pp. 3676-3687
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