Oxidation Kinetics of Ge+-Ion Implanted Si

1987 ◽  
Vol 105 ◽  
Author(s):  
O. W. Holland ◽  
C. W. White ◽  
D. Fathy

AbstractKinetic data are provided for oxidation of Ge+-ion implanted Si over a range of temperature and oxidation ambient. Oxidation rates were enhanced in implanted Si and, over most of the range studied, found to be consistent with a modified reaction at the oxide/Si interface. However, this reaction is shown to be more complex than in virgin Si and could not be represented by a single activation energy. An anomalous behavior is exhibited at low-temperature for steam oxidation. This behavior is characterized and the mechanisms which are responsible are discussed.

1980 ◽  
Vol 2 ◽  
Author(s):  
Jack Washburn

ABSTRACTThe clustering of isolated interstitial silicon, implanted atoms, and vacant lattice sites produced by low temperature and room temperature ion implantation during subsequent annealing is reviewed. An electron microscope method for studying the kinetics of the amorphous to crystalline transformation in silicon is described. The technique is applied to measurement of the activation energy for interface migration and the formation of microtwins for different growth directions. A very brief review of the effects of laser annealing after ion implantation is included.


1980 ◽  
Vol 45 (12) ◽  
pp. 3402-3407 ◽  
Author(s):  
Jaroslav Bartoň ◽  
Vladimír Pour

The course of the conversion of methanol with water vapour was followed on a low-temperature Cu-Zn-Cr-Al catalyst at pressures of 0.2 and 0.6 MPa. The kinetic data were evaluated together with those obtained at 0.1 MPa and the following equation for the reaction kinetics at the given conditions was derived: r = [p(CH3OH)p(H2O)]0.5[p(H2)]-1.3.


1998 ◽  
Vol 555 ◽  
Author(s):  
Peter A. DiFonzo ◽  
Mona Massuda ◽  
James T. Kelliher

AbstractThe stoichiometric composition and oxidation rates ( wet or dry ) of plasma enhanced chemical vapor deposited (PECVD) silicon carbide (SiC) films are effected by the deposition conditions of trimethylsilane (3MS) and carrier gas. We report the oxidation kinetics of SiC thin films deposited in a modified commercial PECVD reactor. A standard horizontal atmospheric furnace in the temperature range of 925–1100°C was used in the oxidation. Oxidized films were measured optically by commercially available interferometer and ellipsometer tools in addition to mechanically using a commercially available profilometer. Activation energies of the parabolic rates were in the range of 20.93 to 335.26 kJ/mol.


2013 ◽  
Vol 825 ◽  
pp. 238-241 ◽  
Author(s):  
Porogo Duku ◽  
Sanet H. Minnaar ◽  
Susan T.L. Harrison ◽  
Jochen Petersen

A novel apparatus was developed to test the ferrous iron oxidation kinetics of Leptospirillum ferriphilum in predominantly sessile culture, by combining a CSTR under wash-out conditions with a packed bed of inert ceramic saddles. Results indicate that a dense culture of sessile bacteria is established rapidly, which achieves high oxidation rates in all experiments with a yield in terms of CO2 uptake rates comparable or higher to what has been measured in planktonic culture. However, the yield in terms of cell counts changes dramatically, indicating a substantial shift in carbon utilisation in the sessile culture. The apparatus is feasible as a method to study iron oxidation kinetics of sessile cultures, providing it is operated at sufficiently high recycle ratios.


1987 ◽  
Vol 247 (3) ◽  
pp. 505-511 ◽  
Author(s):  
J S Barton ◽  
D L Vandivort ◽  
D H Heacock ◽  
J A Coffman ◽  
K A Trygg

The assembly kinetics of microtubule protein are altered by ionic strength, temperature and Mg2+, but not by pH. High ionic strength (I0.2), low temperature (T less than 30 degrees C) and elevated Mg2+ (greater than or equal to 1.2 mM) induce a transition from biphasic to monophasic kinetics. Comparison of the activation energy obtained for the fast biphasic step at low ionic strength (I0.069) shows excellent agreement with the values obtained at high ionic strength, low temperature and elevated Mg2+. From this observation it can be implied that the tubulin-containing reactant of the fast biphasic event is also the species that elongates microtubules during monophasic assembly. Second-order rate constants for biphasic assembly are 3.82(+/- 0.72) x 10(7) M-1.s-1 and 5.19(+/- 1.25) x 10(6) M-1.s-1, and for monophasic assembly the rate constant is 2.12(+/- 0.56) x 10(7) M-1.s-1. The microtubule number concentration is constant during elongation of microtubules for biphasic and monophasic assembly.


1979 ◽  
Vol 44 (12) ◽  
pp. 3676-3687 ◽  
Author(s):  
Vlastimil Vyskočil ◽  
Miloš Kraus

The kinetics of the title reactions has been measured at 350°C and atmospheric pressure on six Co-Mo-AL2O3 catalysts prepared by successive impregnation of the support with solutions of molybdenum and cobalt salts and containing these components in different ratios as well as on a commercial Cherox 36-00 catalyst. The activity of these catalysts depend strongly on their composition and showed similar trends for both reactions. Kinetic data were correlated by equations of Langmuir-Hishelwood type. Their adsorption coefficients have a similar value for different catalysts and all differences in the activity reflected in rate constants. Surface concentrations of molybdenum were determined by low temperature oxygen adsorption and were correlated with experimental rate constants.


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