Optical Reflectometry for Detailed Modeling of Buried Layers in Silicon-on-Insulator

ABSTRACTOptical reflectometry has been used to describe the morphology of buried layers by high dose oxygen ion implantation into silicon. Previous work has demonstrated that the layer depth, thickness, and shape of surrounding regions with a graded concentration of oxygen can be successfully modeled when compared to SIMS and XTEM. A selection of nomographs for analyzing spectra resulting from conventional implant conditions as a function of dose and screen oxide thickness are presented.

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Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100118370 ◽

1985 ◽

Vol 43 ◽

pp. 300-301

Author(s):

N. Lewis ◽

E. L. Hall ◽

A. Mogro-Campero ◽

R. P. Love

Keyword(s):

Ion Implantation ◽

Single Crystal ◽

Single Crystal Silicon ◽

Silicon Layer ◽

Device Fabrication ◽

Silicon On Insulator ◽

High Dose ◽

Crystal Silicon ◽

Oxygen Ion ◽

Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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18O isotope studies on the redistribution of oxygen in noncontinuous buried layers formed by high-dose oxygen ion implantation

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/0168-583x(90)90796-w ◽

1990 ◽

Vol 45 (1-4) ◽

pp. 110-114 ◽

Cited By ~ 3

Author(s):

R.J. Chater ◽

J.A. Kilner ◽

K.J. Reeson ◽

A.K. Robinson ◽

P.L.F. Hemment

Keyword(s):

Ion Implantation ◽

High Dose ◽

Oxygen Ion ◽

18O Isotope ◽

Isotope Studies ◽

Buried Layers ◽

Oxygen Ion Implantation

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The Microstructure of Silicon-on-Insulator Structures Formed by High Dose Oxygen Ion Implantation

MRS Proceedings ◽

10.1557/proc-7-401 ◽

1981 ◽

Vol 7 ◽

Cited By ~ 10

Author(s):

R.F. Pinizzotto ◽

B.L. Vaandrager ◽

H.W. Lam

Keyword(s):

Electron Microscopy ◽

Dislocation Density ◽

Ion Implantation ◽

Silicon Layer ◽

Silicon On Insulator ◽

High Dose ◽

Cross Sectional ◽

Plan View ◽

Oxygen Ion ◽

Oxygen Ion Implantation

ABSTRACTCross-sectional and plan view transmission electron microscopy and high resolution scanning electron microscopy have been used to characterize the microstructure of silicon-on-insulator formed by high dose oxygen ion implantation. The complete microstructure was observed to be composed of a series of distinct zones. The top silicon layer was {100} single crystal with a very low dislocation density. The second layer was a mixture of fine grained polysilicon and amorphous SiO2. The third layer was pure SiO2 , followed by a second mixed layer. Finally, there was a layer of {100} silicon with an extremely high dislocation density. Some of the dislocations extended as far as 1 μm into the Si substrate. The relative widths of the layers were found to depend on the total ion fluence. The oxide layer did not occur for low doses and the two mixed layers merged into one zone. At high doses, the silicon-silicon dioxide interfaces are abrupt due to internal oxidation.

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Characteristics of MOSFETs fabricated in silicon-on-insulator material formed by high-dose oxygen ion implantation

Electronics Letters ◽

10.1049/el:19810251 ◽

1981 ◽

Vol 17 (10) ◽

pp. 356 ◽

Cited By ~ 43

Author(s):

H.W. Lam ◽

R.F. Pinizzotto ◽

H.T. Yuan ◽

D.W. Bellavance

Keyword(s):

Ion Implantation ◽

Silicon On Insulator ◽

High Dose ◽

Oxygen Ion ◽

Oxygen Ion Implantation

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Formation of Silicon-On-Insulator Structures by Multiple Oxygen Implantations

MRS Proceedings ◽

10.1557/proc-93-125 ◽

1987 ◽

Vol 93 ◽

Cited By ~ 2

Author(s):

S. N. Bunker ◽

P. Sioshansi ◽

S. P. Tobin

Keyword(s):

Defect Density ◽

Silicon On Insulator ◽

High Dose ◽

Threading Dislocation ◽

Oxygen Ion ◽

Dislocation Defect ◽

Buried Layers ◽

High Doses ◽

Processing Techniques ◽

Oxygen Ion Implantation

ABSTRACTHigh dose oxygen ion implantation into silicon is an established method to form buried insulating layers. The material produced by standard processing techniques typically exhibits buried layers which are a few hundred nanome ers thick with a threading dislocation defect density on the order of 108/cm2. Unusual structures can be obtained by using repetitive cycles of partial doses of ions followed by annealing and possibly epitaxial growth. Both low and high doses may be used, the former intended to provide decreased defect density and the latter to increase the thickness of the buried layer above the theoretical maximum for higher voltage isolation. The material properties resulting from several variations of this technique are described and characterized.

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