Effects of Silicon:Carbon P+ Layer Interfaces on Solar Cells

1987 ◽  
Vol 95 ◽  
Author(s):  
F. R. Jeffrey ◽  
G. D. Vernstrom ◽  
M. F. Weber ◽  
J. R. Gilbert
Keyword(s):  
Open Circuit Voltage ◽  
Series Resistance ◽  
Photovoltaic Performance ◽  
Transparent Conductive Oxide ◽  
Open Circuit ◽  
Electron Current ◽  
Potential Source ◽  
Conductive Oxide ◽  
Abrupt Interface ◽  
High Series

AbstractResults are presented showing the effects on amorphous silicon (a-Si) photovoltaic performance of the interfaces associated with a silicon carbide (a-Si:C) p+ layer. Carbon grading into the intrinsic layer from the p+ layer increases open circuit voltage (Voc) from O.7V to 0.88V. This effect is very similar to the boron profile effect reported earlier and supports the contention that Voc is being limited by an electron current at the p-i interface. The interface between the p+ a-Si:C layer and the transparent conductive oxide (TCO) is shown to be a potential source of high series resistance, with an abrupt interface showing the most serious problem. The effect is explained by electron injection from the TCO into the p+ layer being inhibited as a result of band mismatch.

scholarly journals Au/Cu2Te/CdTe/CdS/TCO/Glass Solar Cells withCdIn2O4Obtained by Sol-Gel as TCO

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
J. Márquez Marín ◽  
G. Torres Delgado ◽  
M. A. Aguilar Frutis ◽  
R. Castanedo Pérez ◽  
O. Zelaya Ángel
Keyword(s):  
Solar Cells ◽  
Thermal Activation ◽  
Open Circuit Voltage ◽  
Sol Gel ◽  
Transparent Conductive Oxide ◽  
Cdte Layer ◽  
Open Circuit ◽  
Conductive Oxide ◽  
Systematic Optimization ◽  
Gel Technique

An Au/Cu2Te/CdTe/CdS/TCO/glass heterostructure based superstrate solar cells with 2.5 mm2of area, where the CdTe layer was prepared by means of closed spaced sublimation (CSS) and the CdS by chemical bath, reached an efficiencyηvalue of 12.1%. As transparent conductive oxide (TCO), a thin film of cadmium-indium oxide (CdIn2O4:CIO), obtained by sol-gel technique, was used. A systematic optimization of the thermal activation of the CdTe/CdS/CIO central part of the device with a CdCl2vapor ambient made the conversion efficiency of the Au/Cu2Te/CdTe/CdS/CIO/glass heterostructure reaches 9.94% for the CdTe layer with thickness of 1.8 μm. This efficiency was reached only through an open circuit voltageVOCoptimization. A maximumηof 12.1% was reached with the established procedure of optimization and when the CdTe layer thickness was increased to 3.1 ± 0.05 μm. The substitution of CIO by commercial ITO provoked in the cell a decrease ofηfrom 12.1% to 7.2%, both devices prepared under the same conditions. Starting from these results, we can say that CIO was a better TCO than commercial ITO in our solar cell, with the advantage that CIO was obtained by sol-gel, which is a simple and economical technique.

Impact of transparent conductive oxide front side texture on the open-circuit voltage of a-Si:H solar cells

2016 ◽  
Vol 213 (7) ◽  
pp. 1942-1948
Author(s):  
Chao Zhang ◽  
Tsvetelina Merdzhanova ◽  
Matthias Meier ◽  
Nicolas Sommer ◽  
Oleksandr Astakhov
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Transparent Conductive Oxide ◽  
Open Circuit ◽  
Front Side ◽  
Conductive Oxide

scholarly journals Direct AFM-based nanoscale mapping and tomography of open-circuit voltages for photovoltaics

2018 ◽  
Vol 9 ◽  
pp. 1802-1808 ◽  
Author(s):  
Katherine Atamanuk ◽  
Justin Luria ◽  
Bryan D Huey
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Three Dimensional ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Photovoltaic Properties ◽  
Order Of Magnitude ◽  
Individual Grains

The nanoscale optoelectronic properties of materials can be especially important for polycrystalline photovoltaics including many sensor and solar cell designs. For thin film solar cells such as CdTe, the open-circuit voltage and short-circuit current are especially critical performance indicators, often varying between and even within individual grains. A new method for directly mapping the open-circuit voltage leverages photo-conducting AFM, along with an additional proportional-integral-derivative feedback loop configured to maintain open-circuit conditions while scanning. Alternating with short-circuit current mapping efficiently provides complementary insight into the highly microstructurally sensitive local and ensemble photovoltaic performance. Furthermore, direct open-circuit voltage mapping is compatible with tomographic AFM, which additionally leverages gradual nanoscale milling by the AFM probe essentially for serial sectioning. The two-dimensional and three-dimensional results for CdTe solar cells during in situ illumination reveal local to mesoscale contributions to PV performance based on the order of magnitude variations in photovoltaic properties with distinct grains, at grain boundaries, and for sub-granular planar defects.

Examination of Relationship between Urbach Energy and Open-Circuit Voltage Deficit of Flexible Cu(In,Ga)Se2 Solar Cell for Its Improved Photovoltaic Performance

2019 ◽  
Vol 2 (11) ◽  
pp. 7843-7849
Author(s):  
Jakapan Chantana ◽  
Takahito Nishimura ◽  
Yu Kawano ◽  
Seiki Teraji ◽  
Taichi Watanabe ◽  
...  
Keyword(s):  
Solar Cell ◽  
Urbach Energy ◽  
Open Circuit Voltage ◽  
Photovoltaic Performance ◽  
Open Circuit

Side-chain effect on the photovoltaic performance of conjugated polymers based on benzodifuran and benzodithiophene-4,8-dione

MRS Advances ◽  
2019 ◽  
Vol 4 (36) ◽  
pp. 2001-2007
Author(s):  
Enfang He ◽  
Hong Zhang ◽  
Yueyue Gao ◽  
Fengyun Guo ◽  
Shiyong Gao ◽  
...  
Keyword(s):  
Fill Factor ◽  
Open Circuit Voltage ◽  
Polymer Solar Cells ◽  
Photovoltaic Performance ◽  
Open Circuit ◽  
Side Chain ◽  
Large Area ◽  
Device Structure ◽  
Roll To Roll ◽  
Solvent Additive

ABSTRACT:Two benzodifuran (BDF) polymers, PBDF-C and PBDF-S, with alkyl and alkylthio substituted thiophene side-chains and benzodithiophene-4,8-dione (BDD) as the acceptor were designed and synthesized. Their optical, electrochemical properties and photovoltaic performances were systematically investigated. The polymer solar cells (PSCs) with a device structure of ITO/PEDOT:PSS/polymer:PC71BM/Ca/Al were fabricated. The PBDF-C based device showed a power conversion efficiency (PCE) of 3.01% after adding 1 vol% 1,8-diodooctane (DIO) as the solvent additive, and PBDF-S gave an enhanced PCE of 3.48% without any post-treatments. The enhancements were from the higher open-circuit voltage (Voc) and fill factor (FF). The thermal- and solvent-treatment-free processing is more favourable for the large area roll-to-roll manufacturing or printing technology for PSCs.

scholarly journals Thermal behaviour of dicarboxylic ester bithiophene polymers exhibiting a high open-circuit voltage

2018 ◽  
Vol 6 (14) ◽  
pp. 3731-3742 ◽  
Author(s):  
Ruurd Heuvel ◽  
Fallon J. M. Colberts ◽  
Martijn M. Wienk ◽  
René A. J. Janssen
Keyword(s):  
Solar Cells ◽  
Thermal Properties ◽  
Thermal Behaviour ◽  
Open Circuit Voltage ◽  
Photovoltaic Performance ◽  
Open Circuit ◽  
Side Chains ◽  
Open Circuit Voltages ◽  
Dicarboxylic Ester

Polythiophene derivatives with ester side chains enable high open-circuit voltages in polymer–fullerene solar cells. The side chains affect the solubility, thermal properties, tendency to aggregate, and photovoltaic performance by modulating the morphology of the blends.

scholarly journals Ultra-low p-doping of poly(3-hexylthiophene) and its impact on polymer aggregation and photovoltaic performance

2016 ◽  
Vol 4 (1) ◽  
Author(s):  
Marcel M. Said ◽  
Yadong Zhang ◽  
Raghunath R. Dasari ◽  
Dalaver H. Anjum ◽  
Rahim Munir ◽  
...  
Keyword(s):  
Solar Cells ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Photovoltaic Performance ◽  
Photovoltaic Cells ◽  
Open Circuit ◽  
Device Performance ◽  
Long Range Order ◽  
P3ht Film ◽  
Low Levels

AbstractPoly(3-hexylthiophene) (P3HT) films and P3HT / fullerene photovoltaic cells have been p-doped with very low levels (< 1 wt. %) of molybdenum tris[1-(trifluoromethylcarbonyl)- 2-(trifluoromethyl)-ethane-1,2-dithiolene]. The dopants are inhomogenously distributed within doped P3HT films, both laterally and as a function of depth, and appear to aggregate in some instances. Doping also results in subtle changes in the local and long range order of the P3HT film. These effects likely contribute to the complexity of the observed evolutions in conductivity, mobility and work function with doping levels. They also negatively affect the open-circuit voltage and fill factor of solar cells in unexpected ways, indicating that dopant aggregation and non-uniform distribution can harm device performance.

scholarly journals High open-circuit voltage small-molecule p-DTS(FBTTh2)2:ICBA bulk heterojunction solar cells – morphology, excited-state dynamics, and photovoltaic performance

2015 ◽  
Vol 3 (4) ◽  
pp. 1530-1539 ◽  
Author(s):  
Aung Ko Ko Kyaw ◽  
Dominik Gehrig ◽  
Jie Zhang ◽  
Ye Huang ◽  
Guillermo C. Bazan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Excited State ◽  
Solar Cell ◽  
Small Molecule ◽  
Open Circuit Voltage ◽  
Bulk Heterojunction ◽  
Photovoltaic Performance ◽  
Open Circuit ◽  
Heterojunction Solar Cells ◽  
Bulk Heterojunction Solar Cell

A high VOC of 1V is achieved in the bulk heterojunction solar cell using the solution-processed small molecule donor p-DTS(FBTTh2)2 and indene-C60 bis-adduct acceptor.

scholarly journals Synthesis and Photovoltaic Effect of Electron-Withdrawing Units for Low Band Gap Conjugated Polymers Bearing Bi(thienylenevinylene) Side Chains

Polymers ◽  
2019 ◽  
Vol 11 (9) ◽  
pp. 1461 ◽  
Author(s):  
Jianfeng Li ◽  
Yufei Wang ◽  
Ningning Wang ◽  
Zezhou Liang ◽  
Xu Wang ◽  
...  
Keyword(s):  
Conjugated Polymers ◽  
Open Circuit Voltage ◽  
Photovoltaic Effect ◽  
Photovoltaic Performance ◽  
Hole Mobility ◽  
Open Circuit ◽  
Photovoltaic Devices ◽  
Good Thermal Stability ◽  
Highest Occupied Molecular Orbital ◽  
Donor Acceptor

A novel (E)-5-(2-(5-alkylthiothiophen-2-yl)vinyl)thien-2-yl (TVT)-comprising benzo[1,2-b:4,5-b’]dithiophene (BDT) derivative (BDT-TVT) was designed and synthetized to compose two donor-acceptor (D-A) typed copolymers (PBDT-TVT-ID and PBDT-TVT-DTNT) with the electron-withdrawing unit isoindigo (ID) and naphtho[1,2-c:5,6-c′]bis[1,2,5]thiadiazole (NT), respectively. PBDT-TVT-ID and PBDT-TVT-DTNT showed good thermal stability (360 °C), an absorption spectrum from 300 nm to 760 nm and a relatively low lying energy level of Highest Occupied Molecular Orbital (EHOMO) (−5.36 to –5.45 eV), which could obtain a large open-circuit voltage (Voc) from photovoltaic devices with PBDT-TVT-ID or PBDT-TVT-DTNT. The photovoltaic devices with ITO/PFN/polymers: PC71BM/MoO3/Ag structure were assembled and exhibited a good photovoltaic performance with a power conversion efficiency (PCE) of 4.09% (PBDT-TVT-ID) and 5.44% (PBDT-TVT-DTNT), respectively. The best PCE of a PBDT-TVT-DTNT/PC71BM-based device mainly originated from its wider absorption, higher hole mobility and favorable photoactive layer morphology.

scholarly journals Electrical Characterization and Modeling of a Gelatin/Graphene System

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Giovanni Landi ◽  
Andrea Sorrentino ◽  
Salvatore Iannace ◽  
Heinrich C. Neitzert
Keyword(s):  
Electrical Impedance ◽  
Open Circuit Voltage ◽  
Series Resistance ◽  
Forward Bias ◽  
Electrical Characterization ◽  
Reaction Rates ◽  
Open Circuit ◽  
Charge Carriers ◽  
Low Frequencies ◽  
Multiple Step

A gelatin/graphene composite has been analyzed by means of current density-voltage and the electrical impedance measurements. The DC electrical behavior has been interpreted in terms of an equivalent Thévenin model taking into account the open circuit voltage and the series resistance. A model based on the effect of the electrical double layer and on the diffusion of the charge carriers is used for the analysis of the experimental data, obtained in the frequency domain. The model reveals for any applied voltages a marked diffusion process at low frequencies. In particular, where the charge transfer mechanism is dominant, the time distribution of the reaction rates reveals that several multiple step reactions occur in the materials, especially at high values of the applied forward bias voltages.

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