High-Temperature Properties of Si3N4 Ceramics

MRS Bulletin ◽  
1995 ◽  
Vol 20 (2) ◽  
pp. 28-32 ◽  
Author(s):  
M.J. Hoffmann

Silicon nitride is a highly covalent bonded compound which decomposes at 1877°C. Therefore, it is impossible to densify Si3N4 without sintering additives. Densification is achieved by liquid-phase sintering usually using metal oxides such as MgO, Y2O3, A12O3, and most of the rare-earth oxides as sintering additives. The oxides react with SiO2—always present at the surface of Si3N4 particles—to form an oxide melt and, with increasing temperature, an oxynitride melt by dissolution of Si3N4. The resulting microstructure consists of elongated Si3N4 needles embedded in a matrix of smaller equiaxed Si3N4 grains and a grain boundary phase, as shown in Figure 1. The amount and chemistry of the sintering aids determine the volume fraction of the grain boundary phase. The content required for complete densification depends on the sintering techniques: 2–5 vol% additives are sufficient if densification is supported by a high external pressure (hot pressing [HP] or hot isostatic pressing [HIP]); pressureless-sintered and gas-pressure-sintered (10-MPa nitrogen pressure) materials have additive contents of up to 15 vol%. Today, silicon nitride ceramics are regarded as a class of material comparable to steel. Different qualities depend on the size and shape of the silicon nitride grains and the amount and chemistry of the grain boundary phase. Materials with a high room-temperature strength exhibit a finegrained, elongated microstructure, while materials with a high fracture toughness are more coarse-grained. In both cases, a weak interface is required to induce transgranular fracture. (See Becher et al. in this issue.) Since all Si3N4 grains are completely wetted by the grain boundary phase, the interface strength is determined by the additive composition. Nevertheless, a contradiction arises between the development of high-strength and high-toughness Si3N4 ceramics and high-temperature resistant materials because the grain boundary phase is responsible for the excellent properties at low temperatures, but limits the properties at temperatures above its softening point.

Author(s):  
Gareth Thomas

Silicon nitride and silicon nitride based-ceramics are now well known for their potential as hightemperature structural materials, e.g. in engines. However, as is the case for many ceramics, in order to produce a dense product, sintering additives are utilized which allow liquid-phase sintering to occur; but upon cooling from the sintering temperature residual intergranular phases are formed which can be deleterious to high-temperature strength and oxidation resistance, especially if these phases are nonviscous glasses. Many oxide sintering additives have been utilized in processing attempts world-wide to produce dense creep resistant components using Si3N4 but the problem of controlling intergranular phases requires an understanding of the glass forming and subsequent glass-crystalline transformations that can occur at the grain boundaries.


Author(s):  
Michael K. Cinibulk

Silicon nitride ceramics are among the leading candidate materials for use in structural applications at high temperatures. Due to the highly covalent nature of the Si-N bond and therefore low self-diffusivity, processing Si3N4 to full density requires the use of additives to provide a medium for liquid-phase sintering. When exposed to temperatures above ∼1000°C the resulting amorphous grain-boundary phases soften, leading to grain-boundary sliding and the eventual failure of the ceramic. The objectives of this work were to modify the grain-boundary phase composition and then attempt to devitrify the resulting intergranular phase to a refractory crystalline phase, producing a sintered Si3N4 with improved high-temperature strength and oxidation resistance. Transmission electron microscopy (TEM) and energy-dispersive x-ray spectroscopy (EDS) were used to characterize these materials. This paper describes these results.


1997 ◽  
Vol 3 (S2) ◽  
pp. 731-732
Author(s):  
L. Fu ◽  
M. J. Hoffmann ◽  
X. Pan

Si3N4-based materials exhibit attractive mechanical properties for high-temperature applications. These properties are influenced strongly by the size and morphology of the grain boundaries and grain-boundary phase. An amorphous intergranular film (IGF) commonly exists at two grain junctions. The thickness of these IGFs sensitively depend on the chemical composition of the intergranular phase.In this work, our studies on the grain boundary microstructure of Si3N44 ceramics made by Hot Isostatically Pressing (HIPing).Si3N44 materials were densified by HIPing Si3N4 powders (UBE E-10) at 1950°C at 200 MPa for 1 hour, with sintering aids of either Y2O3 or Y2O3 + A12O3. Two materials were made: material A consisting of 2 wt% Y2O3; material B consisting of 5 wt% Y2O3 and 1 wt% A12O3. Both as-HIPed and oxided samples were investigated. TEM specimens were prepared by conventional procedures. The microstructure and chemical composition were studied on a JEOL 2000FX.


Author(s):  
H.-J. Kleebe ◽  
J.S. Vetrano ◽  
J. Bruley ◽  
M. Rühle

It is expected that silicon nitride based ceramics will be used as high-temperature structural components. Though much progress has been made in both processing techniques and microstructural control, the mechanical properties required have not yet been achieved. It is thought that the high-temperature mechanical properties of Si3N4 are limited largely by the secondary glassy phases present at triple points. These are due to various oxide additives used to promote liquid-phase sintering. Therefore, many attempts have been performed to crystallize these second phase glassy pockets in order to improve high temperature properties. In addition to the glassy or crystallized second phases at triple points a thin amorphous film exists at two-grain junctions. This thin film is found even in silicon nitride formed by hot isostatic pressing (HIPing) without additives. It has been proposed by Clarke that an amorphous film can exist at two-grain junctions with an equilibrium thickness.


Author(s):  
Nancy J. Tighe

Silicon nitride is one of the ceramic materials being considered for the components in gas turbine engines which will be exposed to temperatures of 1000 to 1400°C. Test specimens from hot-pressed billets exhibit flexural strengths of approximately 50 MN/m2 at 1000°C. However, the strength degrades rapidly to less than 20 MN/m2 at 1400°C. The strength degradition is attributed to subcritical crack growth phenomena evidenced by a stress rate dependence of the flexural strength and the stress intensity factor. This phenomena is termed slow crack growth and is associated with the onset of plastic deformation at the crack tip. Lange attributed the subcritical crack growth tb a glassy silicate grain boundary phase which decreased in viscosity with increased temperature and permitted a form of grain boundary sliding to occur.


2004 ◽  
Vol 19 (9) ◽  
pp. 2750-2758 ◽  
Author(s):  
Mark I. Jones ◽  
Kiyoshi Hirao ◽  
Hideki Hyuga ◽  
Yukihiko Yamauchi

The wear properties under low loads of β Si3N4 and α sialon materials sintered with different rare-earth oxide sintering additives have been studied under dry sliding conditions using block-on-ring wear tests. All the worn surfaces showed an absence of fracture and smooth surfaces with the presence of an oxygen-rich filmlike debris indicating tribochemically induced oxidation of the surfaces. Extensive grain boundary removal was observed on the worn surfaces thought to be due to adhesion between this silicate phase and the tribochemically oxidized surfaces. The resistance to such oxidation and the properties of the residual grain boundary phase are thought to be important parameters affecting the wear behavior under the present testing conditions. For both the β Si3N4 and α sialon materials, there was an increase in wear resistance with decreasing cationic radius of the rare earth, thought to be due to improved oxidation resistance, and this was more remarkable in the case of the sialon materials where the incorporation of the sintering additives into the Si3N4 structure results in a lower amount of residual boundary phase.


1995 ◽  
Vol 14 (19) ◽  
pp. 1362-1365 ◽  
Author(s):  
G. Bernard-Granger ◽  
J. Crampon ◽  
R. Duclos ◽  
B. Cales

1994 ◽  
Vol 346 ◽  
Author(s):  
Y. Bando ◽  
H. Suematsu ◽  
M. Mitomo

ABSTRACTThe grain boundary phase of silicon nitride containing additives Y2O3 and Nd2O3 has been studied by means of a newly developed 300kV field emission ATEM. The composition of the two-grain boundary phase of about 1 nm thick is successfully determined. It is then found that the compositions among the grain boundaries are not the same and the additives of Y2O3-Nd2O3 are poor in the two-grain boundary, while they are rich in the triple points.


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