scholarly journals Contact Resistance of InGaN/GaN Light Emitting Diodes Grown on the Production Model Multi-Wafer MOVPE Reactor

1999 ◽  
Vol 4 (S1) ◽  
pp. 703-708 ◽  
Author(s):  
R.W. Chuang ◽  
A.Q. Zou ◽  
H.P. Lee ◽  
Z.J. Dong ◽  
F.F. Xiong ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Transmission Line ◽  
Device Fabrication ◽  
Production Model ◽  
Specific Contact Resistance ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Annealing Temperatures ◽  
Line Measurement ◽  
Specific Contact

We report both the device fabrication and characterization of InGaN/GaN single quantum well LEDs grown on sapphire substrates using multi-wafer MOVPE reactor. To improve current spreading of the LEDs, a self-aligned process is developed to define LED mesa that is coated with a thin, semi-transparent Ni/Au (40 Å/40 Å) layer. A detailed study on the ohmic contact resistance of Ni/Cr/Au on p-GaN versus annealing temperatures is carried out on transmission line test structures. It was found that the annealing temperatures between 300 to 500 °C yield the lowest specific contact resistance rc ( 0.016 Ω-cm2 at a current density of 66.7 mA/cm). Based on the extracted rc from the transmission line measurement, we estimate that the contact resistance of the p-type GaN accounts for ∼ 88% of the total series resistance of the LED.

Contact Resistance of InGaN/GaN Light Emitting Diodes Grown on the Production Model Multi-Wafer Movpe Reactor

1998 ◽  
Vol 537 ◽  
Author(s):  
R.W. Chuang ◽  
A.Q. Zou ◽  
H.P. Lee ◽  
Z.J. Dong ◽  
F.F. Xiong ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Transmission Line ◽  
Device Fabrication ◽  
Production Model ◽  
Specific Contact Resistance ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Annealing Temperatures ◽  
Specific Contact ◽  
P Type

AbstractWe report both the device fabrication and characterization of InGaN/GaN single quantum well LEDs grown on sapphire substrates using multi-wafer MOVPE reactor. To improve current spreading of the LEDs, a self-aligned process is developed to define LED mesa that is coated with a thin, semi-transparent Ni/Au (40 Å/40 Å) layer. A detailed study on the ohmic contact resistance of Ni/Cr/Au on p-GaN versus annealing temperatures is carried out on transmission line test structures. It was found that the annealing temperatures between 300 to 500°C yield the lowest specific contact resistance rc (0.016 Ω-cm2 at a current density of 66.7 mA/cm). Based on the extracted rc from the transmission line measurement, we estimate that the contact resistance of the p-type GaN accounts for ∼ 88% of the total series resistance of the LED.

Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport

2014 ◽  
Vol 806 ◽  
pp. 57-60
Author(s):  
Nicolas Thierry-Jebali ◽  
Arthur Vo-Ha ◽  
Davy Carole ◽  
Mihai Lazar ◽  
Gabriel Ferro ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
Schottky Barrier Height ◽  
Annealing Temperature ◽  
Process Condition ◽  
Specific Contact Resistance ◽  
High Doping Level ◽  
Annealing Temperatures ◽  
Specific Contact ◽  
P Type

This work reports on the improvement of ohmic contacts made on heavily p-type doped 4H-SiC epitaxial layer selectively grown by Vapor-Liquid-Solid (VLS) transport. Even before any annealing process, the contact is ohmic. This behavior can be explained by the high doping level of the VLS layer (Al concentration > 1020 cm-3) as characterized by SIMS profiling. Upon variation of annealing temperatures, a minimum value of the Specific Contact Resistance (SCR) down to 1.3x10-6 Ω.cm2 has been obtained for both 500 °C and 800 °C annealing temperature. However, a large variation of the SCR was observed for a same process condition. This variation is mainly attributed to a variation of the Schottky Barrier Height.

Electrical Properties of (Zn, Mn) Containing Multilayer Metallizations to p-Type InGaAs/InP

1995 ◽  
Vol 382 ◽  
Author(s):  
Patrick W. Leec ◽  
Geoffrey K. Reeves ◽  
Wei Zhou
Keyword(s):  
Electrical Properties ◽  
Contact Resistance ◽  
Layer Thickness ◽  
Annealing Temperature ◽  
Specific Contact Resistance ◽  
Annealing Temperatures ◽  
Specific Contact ◽  
A Minor ◽  
P Type ◽  
Metal Layers

ABSTRACTThe specific contact resistance, pc, of Au/Zn/Au, Ni/Zn/Ni/Au, Pd/Zn/Pt/Au and Pd/Mln/Sb/Pd/Au contacts to p-In0.47Ga0.53As/ InP has been measured as a function of layer thickness of Zn or Mn. All of the as-deposited contacts were ohmic, with pc = 1−2 × 10−5 Ω cm2. Increasing thickness of the Zn layer above 200 Å in the Au/Zn/Au contacts resulted in a minor decrease in pc while producing no change in the Ni/Zn/Ni/Au metallization. For the as-deposited Pd/Mn/Pd/Au contacts, the value of pc was independent of thickness of the Mn layer but differences in pc emerged at annealing temperatures of ≥ 250°. The analysis of these structures by RBS has shown an extensive intermixing of the metal layers at an annealing temperature of 450 °. In the Pd/Zn/Pt/Au contacts, the value of pc was reduced to a minimum value of 8 × 10−6 Ω cm2 by annealing at a temperature of 500 °. An examination of the Pd/Zn/Pt/Au configuration by RBS has shown that the Pt layer acted as a barrier for the indiffusion of the Au.

Ohmic Contacts on N-Type Hg0.4Cd0.6Te.

1990 ◽  
Vol 216 ◽  
Author(s):  
Patrick W. Leech ◽  
Geoffrey K. Reeves ◽  
Martyn H. Kibel
Keyword(s):  
Contact Resistance ◽  
Transmission Line ◽  
Schottky Barrier ◽  
Optical Communications ◽  
Ohmic Contacts ◽  
Specific Contact Resistance ◽  
Electrical Characteristics ◽  
Schottky Barrier Diodes ◽  
Transmission Line Model ◽  
Specific Contact

ABSTRACTThe electrical characteristics of In, Sn, Au and Pt contacts on n-type Hg0.4Cd0.6Te formed in the presence and absence of prior In2+ implantation have been examined. Measurements of specific contact resistance made using a Transmission Line Model have shown that the unimtlanted In/Hg0.4Cd0.6 and Sn/Hg0.4Cd0.6 junctions gave values of pc = 3.0x10−3 to 4.0x10−3 ohm.cm2. Auger sputter profiles of the asdeposited In/Hg0.4Cd0.6 and Sn/Hg0.4Cd0.6 interfaces have shown a significant in-diffusion of the metal overlayer. The influence of shallow In2+ implantation prior to metallization was an increase in pc which occurred above a dose of 1013 ions/cm2. In contrast, Pt and Au formed Schottky barrier diodes on n-type Hg0.4Cd0.6 with øb=0.69eV for Pt and øb=0.79eV for Au. With prior In2+ implantation, both Pt and Au contacts exhibited an ohmic behaviour with pc= 2x10−1 ohm.cm2. These results have significance in the fabrication of devices for 1.0 -2.5μm optical communications.

Specific Contact Resistance Measurements on Multilayer Interconnect Structures.

1983 ◽  
Vol 25 ◽  
Author(s):  
H.B. Harrison ◽  
G.K. Reeves
Keyword(s):  
Contact Resistance ◽  
Transmission Line ◽  
Single Crystal ◽  
Large Scale ◽  
Single Crystal Silicon ◽  
Vlsi Circuits ◽  
Specific Contact Resistance ◽  
Crystal Silicon ◽  
Specific Contact ◽  
Interfacial Contact Resistance

ABSTRACTAn integral part of very large scale integrated (VLSI) circuits is the multilayer structures for electrical interconnection and insulation. Many conducting materials are used for interconnection including polysilicon, silicon, silicides, polycides and metals. An important point in considering these materials is the interconnection between them and the corresponding characterization of the interface by way of the specific contact resistance, which directly affects the interfacial contact resistance.For a planar ohmic contact formed between a metal and any layer with a much larger sheet resistance (for example single crystal silicon) a technique based on the transmission line model provides a method of characterizing these contacts. However, for planar contacts between layers with comparable sheet resistivities for example polysilicon to single crystal silicon this technique must be modified. In this paper we review the transmission line approach used to obtain the specific contact resistance between such layers and provide initial results of measurements made on the poly to single crystal interface. We also present a series of test structures, currently under fabrication that will provide more detailed experimental data.

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