scholarly journals Piezoelectric Properties of GaN Self-Organized Quantum Dots

1999 ◽  
Vol 4 (S1) ◽  
pp. 846-851 ◽  
Author(s):  
B. Daudin ◽  
F. Widmann ◽  
J. Simon ◽  
G. Feuillet ◽  
J. L. Rouvière ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam ◽  
Piezoelectric Properties ◽  
Radiative Lifetime ◽  
Average Height ◽  
Self Organized ◽  
Piezoelectric Effects ◽  
Bulk Gan ◽  
Piezoelectric Field ◽  
Large Quantum

It is demonstrated that GaN quantum dots with the wurtzite structure grown by molecular beam epitaxy on AlN exhibit optical properties which, depending on the size of the dots, may be dominated by piezoelectric effects. In "large" quantum dots with an average height and diameter of 4.1 and 17 nm, respectively, the photoluminescence peak is centered at 2.95 eV, nearly 0.5 eV below the bulk GaN bandgap, which is assigned to a piezoelectric field of 5.5 MV/cm present in the dots. The decay time of the photoluminescence was also measured. A comparison is carried out with theoretical calculation of the radiative lifetime.

Piezoelectric Properties of GaN Self-Organized Quantum Dots

1998 ◽  
Vol 537 ◽  
Author(s):  
B. Daudin ◽  
F. Widmann ◽  
J. Simon ◽  
G. Feuillet ◽  
J. L. Rouvi&re ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam ◽  
Piezoelectric Properties ◽  
Radiative Lifetime ◽  
Average Height ◽  
Self Organized ◽  
Piezoelectric Effects ◽  
Bulk Gan ◽  
Piezoelectric Field ◽  
Large Quantum

AbstractIt is demonstrated that GaN quantum dots with the wurtzite structure grown by molecular beam epitaxy on AIN exhibit optical properties which, depending on the size of the dots, may be dominated by piezoelectric effects. In “large” quantum dots with an average height and diameter of 4.1 and 17 nm, respectively, the photoluminescence peak is centered at 2.95 eV, nearly 0.5 eV below the bulk GaN bandgap, which is assigned to a piezoelectric field of 5.5 MV/cm present in the dots. The decay time of the photoluminescence was also measured. A comparison is carried out with theoretical calculation of the radiative lifetime.

Excitonic Luminescence from Self-Organized Quantum Dots of CdTe Grown by Molecular Beam Epitaxy

1999 ◽  
Vol 38 (Part 1, No. 4B) ◽  
pp. 2524-2528 ◽  
Author(s):  
Shinji Kuroda ◽  
Yoshikazu Terai ◽  
Kôki Takita ◽  
Tsuyoshi Okuno ◽  
Yasuaki Masumoto
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Self Organized ◽  
Excitonic Luminescence

Optical Properties of Wurtzite GaN and ZnO Quantum Dots

2004 ◽  
Vol 818 ◽  
Author(s):  
Vladimir A. Fonoberov ◽  
Alexander A. Balandin
Keyword(s):  
Quantum Dots ◽  
Decay Time ◽  
Radiative Decay ◽  
State Energy ◽  
Energy Gap ◽  
Dead Layer ◽  
Bulk Gan ◽  
Piezoelectric Field ◽  
Zno Quantum Dots ◽  
Valence Bands

AbstractWe have investigated exciton states in wurtzite GaN/AlN and ZnO quantum dots. A strong piezoelectric field in GaN/AlN quantum dots is found to tilt conduction and valence bands, thus pushing the electron to the top and the hole to the bottom of the GaN/AlN quantum dot. As a result, the exciton ground state energy in GaN/AlN quantum dots with heights larger than 3 nm exhibits a red shift with respect to bulk GaN energy gap. It is shown that the radiative decay time in GaN/AlN quantum dots is large and increases from 0.3 ns for quantum dots with height 1.5 nm to 1.1×103 ns for the quantum dots with height 4.5 nm. On the contrary, the electron and the hole are not separated in ZnO quantum dots. Moreover, a relatively thick “dead layer” is formed near the surface of ZnO quantum dots. As a result, the radiative decay time in ZnO quantum dots is small and decreases from 73 ps for quantum dots with diameter 1.5 nm to 29 ps for the quantum dots with diameter 6 nm.

Improvement of self-organized InAs quantum dots growth by molecular beam epitaxy

2005 ◽  
Vol 276 (1-2) ◽  
pp. 72-76 ◽  
Author(s):  
Z.L. Miao ◽  
S.J. Chua ◽  
Y.H. Chye ◽  
P. Chen ◽  
S. Tripathy
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inas Quantum Dots ◽  
Self Organized

Selective Formation of Self-Organized InAs Quantum Dots Grown on Patterned GaAs Substrates by Molecular Beam Epitaxy

2006 ◽  
Vol 45 (4B) ◽  
pp. 3556-3559 ◽  
Author(s):  
Akio Ueta ◽  
Kouichi Akahane ◽  
Shin-ichioro Gozu ◽  
Naokatsu Yamamoto ◽  
Naoki Ohtani
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inas Quantum Dots ◽  
Self Organized ◽  
Gaas Substrates ◽  
Selective Formation

InAs/GaAs self-organized quantum dots on (411)A GaAs by molecular beam epitaxy

2001 ◽  
Vol 227-228 ◽  
pp. 1010-1015 ◽  
Author(s):  
S Kiravittaya ◽  
R Songmuang ◽  
P Changmuang ◽  
S Sopitpan ◽  
S Ratanathammaphan ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Self Organized

Heterostructures with self-organized quantum dots of Ge on Si for optoelectronic devices

2014 ◽  
Vol 22 (3) ◽  
Author(s):  
K. Lozovoy ◽  
A. Voytsekhovskiy ◽  
A. Kokhanenko ◽  
V. Satdarov ◽  
O. Pchelyakov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam ◽  
Optoelectronic Devices ◽  
Growth Conditions ◽  
Size Distribution Function ◽  
Self Organized ◽  
Segregation Effect ◽  
Infra Red ◽  
Complex Mathematical Model ◽  
Si Quantum Dots

AbstractIn this paper an analysis of tendencies of Ge on Si quantum dots nanoheterostructures’ usage in different optoelectronic devices such as, for example, solar cells and photodetectors of visible and infra-red regions is carried out; a complex mathematical model for calculation of dependency on growth conditions of self-organized quantum dots of Ge on Si grown using the method of molecular beam epitaxy parameters is described. Ways of segregation effect and underlying layers’ influence are considered. It is shown that for realization of good device characteristics quantum dots should have high density, small sizes, uniformity, and narrow size distribution function. The desirable parameters of arrays of square and rectangular quantum dots for device application are attainable under certain growth conditions.

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