The development of low voltage room temperature continuous wave laser diodes

1995 ◽  
Vol 150 ◽  
pp. 790-796 ◽  
Author(s):  
R.L. Gunshor ◽  
J. Han ◽  
A.V. Nurmikko ◽  
A. Salokatve
2000 ◽  
Vol 5 (S1) ◽  
pp. 1-7 ◽  
Author(s):  
Masayoshi Koike ◽  
Shiro Yamasaki ◽  
Yuta Tezen ◽  
Seiji Nagai ◽  
Sho Iwayama ◽  
...  

GaN-based short wavelength laser diodes are the most promising key device for a digital versatile disk. We have been improving the important points of the laser diodes in terms of optical guiding layers, mirror facets. The continuous wave laser irradiation at room temperature could be achieved successfully by reducing the threshold current to 60 mA (4 kA/cm2). We have tried to apply the multi low temperature buffer layers to the laser diodes for the first time to reduce the crystal defects.


2017 ◽  
Vol 19 (47) ◽  
pp. 31823-31829 ◽  
Author(s):  
Guoquan Liu ◽  
Shu-Hao Liou ◽  
Nikolay Enkin ◽  
Igor Tkach ◽  
Marina Bennati

Continuous wave laser irradiation of fullerene–nitroxide derivatives at room temperature leads to spin polarization and NMR signal enhancement of toluene solvent protons.


2019 ◽  
Vol 49 (10) ◽  
pp. 905-908
Author(s):  
M A Ladugin ◽  
N V Gul'tikov ◽  
A A Marmalyuk ◽  
V P Konyaev ◽  
A V Solov'eva

2018 ◽  
Vol 2018 ◽  
pp. 1-7 ◽  
Author(s):  
Jingxin Ding ◽  
Beibei Zhao ◽  
Weiwei Ma ◽  
Hao Yu ◽  
Xiaobo Qian ◽  
...  

3 at.% Tm, x at.% Y:CaF2 crystals (x=0, 0.5, 1, 2, and 3) were grown by the vertical Bridgman method and investigated. Codoping Y3+ ions can manipulate the local structure of Tm3+ ions in the CaF2 crystal and then improve the spectroscopic properties. Compared with 3 at.% Tm:CaF2, 3 at.% Tm, 3 at.% Y:CaF2 crystal has several advantages. Firstly, the absorption cross section is improved from 0.35 × 10−20 cm−2 to 0.45 × 10−20 cm−2 at 767 nm, and the fluorescence intensity had elevated 3.4 times. Secondly, the linewidth of the fluorescence spectrum and lifetime also increased from 164 nm to 191 nm and from 6.16 ms to 8.15 ms at room temperature, respectively. Furthermore, quantum efficiency improved from 58.2% to 80.3%. The maximum laser output power of 583 mW and slope efficiency of 25.3% were achieved in 3 at.% Tm, 3 at.% Y:CaF2 crystal under 790 nm diode pumping.


2007 ◽  
Vol 46 (No. 7) ◽  
pp. L132-L134 ◽  
Author(s):  
Shinichi Matsubara ◽  
Tsutomu Ueda ◽  
Sakae Kawato ◽  
Takao Kobayashi

2014 ◽  
Vol 22 (16) ◽  
pp. 19495 ◽  
Author(s):  
Li Wang ◽  
Haitao Huang ◽  
Deyuan Shen ◽  
Jian Zhang ◽  
Hao Chen ◽  
...  

2006 ◽  
Author(s):  
Masahiro Nomura ◽  
Satoshi Iwamoto ◽  
Katsuyuki Watanabe ◽  
Naoto Kumagai ◽  
Yoshiaki Nakata ◽  
...  

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