INVESTIGATION OF CHARGE TRAPS AT Al-DOPED HfO2/(100)InGaAs INTERFACE BY USING CAPACITANCE AND CONDUCTANCE METHODS

In this study, capacitance and conductance methods were used to investigate the charge traps at a HfO2/(100)InGaAs interface with an atomic layer deposition HfO2 layer doped with Al2O3 by co-deposition technique. The effect of Al doping on the quality of the HfO2/In0.53Ga0.47As interface will be evaluated. The density of interface traps (Dit) near In0.53Ga0.47As midgap is close to 2×1012 cm−2eV−1. Based on comparison to the HfO2/In0.53Ga0.47As interface without Al2O3 interfacial passivation where the value Dit∼1013 cm−2eV−1 is encountered near the midgap, we can conclude that the presence of Al2O3 passivation noticeably improves the interface quality.

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Effect of initial oxidized layer condition on passivation quality of AlOx films deposited by atomic layer deposition technique at room temperature

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) ◽

10.1109/pvsc.2013.6744376 ◽

2013 ◽

Author(s):

Chikako Sakai ◽

Shunsuke Yamamoto ◽

Shohei Miki ◽

Koji Arafune ◽

Yasushi Hotta ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Room Temperature ◽

Atomic Layer ◽

Deposition Technique ◽

Layer Deposition ◽

Atomic Layer Deposition Technique

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Interface quality of atomic layer deposited La-doped ZrO2 films on Ge-passivated In0.15Ga0.85As substrates

MRS Proceedings ◽

10.1557/proc-1194-a08-10 ◽

2009 ◽

Vol 1194 ◽

Author(s):

Alessandro Molle ◽

Guy Brammertz ◽

Luca Lamagna ◽

Sabina Spiga ◽

Marc Meuris ◽

...

Keyword(s):

Thin Films ◽

Atomic Layer ◽

Conduction Band Edge ◽

Interface Traps ◽

Interface Quality ◽

Layer Deposition ◽

Interfacial Defects ◽

Oxide Deposition ◽

La Doped

AbstractLa-doped ZrO2 thin films were grown by O3-based atomic layer deposition on III-V (GaAs, In0.15Ga0.85As) substrates. The direct oxide deposition and the insertion of a Ge passivation layer in between the oxide and the substrate are compared in terms of the resulting density of interface traps. An improved electrical quality of the Ge-passivated interfaces concerning the energy region close to the conduction band edge in the semiconductor band-gap is demonstrated through conductance maps at various temperatures and it is attributed to Ga-related interfacial defects.

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Synthesis of high-voltage (4.7 V) LiCoO2 cathode materials with Al doping and conformal Al2O3 coating by atomic layer deposition

RSC Advances ◽

10.1039/c6ra10531a ◽

2016 ◽

Vol 6 (68) ◽

pp. 63250-63255 ◽

Cited By ~ 27

Author(s):

Ming Xie ◽

Tao Hu ◽

Liu Yang ◽

Yun Zhou

Keyword(s):

Atomic Layer Deposition ◽

Electrochemical Properties ◽

High Voltage ◽

Cathode Materials ◽

Atomic Layer ◽

Al2o3 Coating ◽

Al Doping ◽

Layer Deposition ◽

Licoo2 Cathode

The electrochemical properties of high-voltage (4.7 V) LiCoO2 cathode materials with Al doping and a conformal Al2O3 coating by atomic layer deposition were studied in this paper.

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