scholarly journals Hydrogen Retention Behavior in Boron Films Affected by Impurities Introduced by Hydrogen Plasma Exposure in the LHD

2012 ◽  
Vol 7 (0) ◽  
pp. 2401157-2401157
Author(s):  
Katsushi MATSUOKA ◽  
Makoto KOBAYASHI ◽  
Kiyotaka KAWASAKI ◽  
Tetsuo FUJISHIMA ◽  
Yuto MIYAHARA ◽  
...  
Keyword(s):  
Hydrogen Plasma ◽  
Retention Behavior ◽  
Plasma Exposure ◽  
Hydrogen Retention

scholarly journals Evaluation of hydrogen retention behavior in tungsten exposed to hydrogen plasma in QUEST

2021 ◽  
Vol 26 ◽  
pp. 100856
Author(s):  
Ayaka Koike ◽  
Moeko Nakata ◽  
Shota Yamazaki ◽  
Takuro Wada ◽  
Fei Sun ◽  
...  
Keyword(s):  
Hydrogen Plasma ◽  
Retention Behavior ◽  
Hydrogen Retention

In Situ Auger Spectroscopy Investigation of InP Surfaces Treated in RF Hydrogen and Hydrogen/Methane/Argon Plasmas

1995 ◽  
Vol 386 ◽  
Author(s):  
J. E. Parmeter ◽  
R. J. Shul ◽  
P. A. Miller
Keyword(s):  
Hydrogen Plasma ◽  
Auger Spectroscopy ◽  
Surface Roughening ◽  
Rf Power ◽  
Plasma Exposure ◽  
Argon Plasmas ◽  
Etch Rates ◽  
Phosphorus Depletion ◽  
Oxygen Impurities

ABSTRACTWe have used in situ Auger spectroscopic analysis to investigate the composition of InP surfaces cleaned in rf H2 plasmas and etched in rf H2/CH4/Ar plasmas. In general agreement with previous results, hydrogen plasma treatment is found to remove surface carbon and oxygen impurities but also leads to substantial surface phosphorus depletion if not carefully controlled. Low plasma exposure times and rf power settings minimize both phosphorus depletion and surface roughening. Surfaces etched in H2/CH4/Ar plasmas can show severe phosphorus depletion in high density plasmas leading to etch rates of ∼ 700 Å/min, but this effect is greatly reduced in lower density plasmas that produce etch rates of 30–400 Å/min.

Passivation of Si donors and DX centers in AlGaAs by hydrogen plasma exposure

1987 ◽  
Vol 50 (14) ◽  
pp. 921-923 ◽  
Author(s):  
J. C. Nabity ◽  
Michael Stavola ◽  
J. Lopata ◽  
W. C. Dautremont‐Smith ◽  
C. W. Tu ◽  
...  
Keyword(s):  
Hydrogen Plasma ◽  
Plasma Exposure ◽  
Dx Centers

The Impact of Hydrogen Plasma Treatments at Moderate Temperatures on Sintered Zinc Oxide Samples - Evidence for Hydrogen Induced Nano-Void Formation

2006 ◽  
Vol 957 ◽  
Author(s):  
Reinhart Job
Keyword(s):  
Zinc Oxide ◽  
Oxygen Vacancies ◽  
Hydrogen Plasma ◽  
Void Formation ◽  
Vibration Modes ◽  
Plasma Exposure ◽  
Plasma Treatments ◽  
The Impact ◽  
Substrate Temperatures ◽  
Defect Species

ABSTRACTUsing μ-Raman spectroscopy (μRS) analyses, the impact of hydrogen plasma treatments on sintered zinc oxide (ZnO) samples was investigated. H-plasma exposures (150 W, 13.56 MHz) were carried out for 1 hour at substrate temperatures between 250 °C and 500 °C. μRS reveals that plasma hydrogenated ZnO samples are more defective than non-treated ones. On one hand non-specified defect species are created with a maximal density upon plasma hydrogenation at 350 °C, on the other hand the formation of oxygen vacancies (VO) can be traced. The density of VO defects, appearing upon H-plasma exposure, is not significantly correlated to the applied substrate temperatures. μRS also reveals vibration modes of H2 molecules trapped in nano-voids. The μRS results indicate that those nano-voids are created by the coalescence of VO defects.

In Situ Hydrogen Plasma Exposure for Varying the Stoichiometry of Atomic Layer Deposited Niobium Oxide Films for Use in Neuromorphic Computing Applications

2020 ◽  
Vol 12 (14) ◽  
pp. 16639-16647 ◽  
Author(s):  
Alexander C. Kozen ◽  
Zachary R. Robinson ◽  
Evan R. Glaser ◽  
Mark Twigg ◽  
Thomas J. Larrabee ◽  
...  
Keyword(s):  
Niobium Oxide ◽  
Hydrogen Plasma ◽  
Oxide Films ◽  
Atomic Layer ◽  
Plasma Exposure ◽  
Neuromorphic Computing

scholarly journals Response of tungsten surfaces to helium and hydrogen plasma exposure under ITER relevant steady state and repetitive transient conditions

2017 ◽  
Vol 57 (12) ◽  
pp. 126009 ◽  
Author(s):  
L. Buzi ◽  
G. De Temmerman ◽  
A.E. Huisman ◽  
S. Bardin ◽  
T.W. Morgan ◽  
...  
Keyword(s):  
Steady State ◽  
Hydrogen Plasma ◽  
Plasma Exposure ◽  
Transient Conditions

Passivation of the DX Center in AlGaAs by Hydrogen Plasma Exposure

1991 ◽  
Vol 10 ◽  
pp. 273-282
Author(s):  
Michael Stavola ◽  
Stephen J. Pearton
Keyword(s):  
Hydrogen Plasma ◽  
Plasma Exposure ◽  
Dx Center

The effect of hydrogen plasma on the properties of indium-tin oxide films

1988 ◽  
Vol 3 (4) ◽  
pp. 723-728 ◽  
Author(s):  
S. Major ◽  
M. C. Bhatnagar ◽  
S. Kumar ◽  
K. L. Chopra
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Metal Layer ◽  
Hydrogen Plasma ◽  
Oxide Films ◽  
Film Surface ◽  
Plasma Exposure ◽  
Visible Transmittance ◽  
Tin Oxide Films ◽  
Reduced Surface

The effect of hydrogen plasma exposure on the properties of transparent conducting indium-tin oxide films has been studied. The exposure reduces the film surface to elemental indium. The thickness of the reduced layer increases with increasing exposure and finally saturates to a thickness of about 100 nm. The reduced surface is rough and decreases the visible transmittance of these films drastically due to increased absorptance and reflectance. The reduced metal layer decreases the sheet resistance of the films. Annealing of the plasma-exposed film in oxygen recovers the visible transmittance except in the case of the severely damaged films.

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