In Situ Auger Spectroscopy Investigation of InP Surfaces Treated in RF Hydrogen and Hydrogen/Methane/Argon Plasmas

1995 ◽  
Vol 386 ◽  
Author(s):  
J. E. Parmeter ◽  
R. J. Shul ◽  
P. A. Miller
Keyword(s):  
Hydrogen Plasma ◽  
Auger Spectroscopy ◽  
Surface Roughening ◽  
Rf Power ◽  
Plasma Exposure ◽  
Argon Plasmas ◽  
Etch Rates ◽  
Phosphorus Depletion ◽  
Oxygen Impurities

ABSTRACTWe have used in situ Auger spectroscopic analysis to investigate the composition of InP surfaces cleaned in rf H2 plasmas and etched in rf H2/CH4/Ar plasmas. In general agreement with previous results, hydrogen plasma treatment is found to remove surface carbon and oxygen impurities but also leads to substantial surface phosphorus depletion if not carefully controlled. Low plasma exposure times and rf power settings minimize both phosphorus depletion and surface roughening. Surfaces etched in H2/CH4/Ar plasmas can show severe phosphorus depletion in high density plasmas leading to etch rates of ∼ 700 Å/min, but this effect is greatly reduced in lower density plasmas that produce etch rates of 30–400 Å/min.

In Situ Hydrogen Plasma Exposure for Varying the Stoichiometry of Atomic Layer Deposited Niobium Oxide Films for Use in Neuromorphic Computing Applications

2020 ◽  
Vol 12 (14) ◽  
pp. 16639-16647 ◽  
Author(s):  
Alexander C. Kozen ◽  
Zachary R. Robinson ◽  
Evan R. Glaser ◽  
Mark Twigg ◽  
Thomas J. Larrabee ◽  
...  
Keyword(s):  
Niobium Oxide ◽  
Hydrogen Plasma ◽  
Oxide Films ◽  
Atomic Layer ◽  
Plasma Exposure ◽  
Neuromorphic Computing

Pretreatment of the TaSiN Substrate Surface for Copper-MOCVD

2007 ◽  
Vol 280-283 ◽  
pp. 911-914
Author(s):  
Hyun Ah Park ◽  
Jong Min Lim ◽  
Chong Mu Lee
Keyword(s):  
Exposure Time ◽  
Hydrogen Plasma ◽  
Film Surface ◽  
Process Conditions ◽  
Nucleation Density ◽  
Rf Power ◽  
Plasma Exposure ◽  
Plasma Pretreatment ◽  
Hydrogen Pretreatment ◽  
Plasma Exposure Time

Effects of plasma pretreatments to the TaSiN film surface on Cu nucleation were investigated. Scanning electron microscopy (SEM) was used to measure the Cu nucleation density and to observe the morphology of the Cu film. X-ray spectroscopy (XPS) and Auger depth profiling analyses were used to investigate the bonding state of atoms and the concentrations of oxygen and nitrogen at the TaSiN film surface, respectively. Cu nucleation in Cu MOCVD is effectively enhanced by treating the underlying Ta-Si-N film surface with hydrogen plasma prior to Cu MOCVD. The Cu nucleation density in Cu MOCVD increases as the rf-power and the plasma exposure time increase in the hydrogen plasma pretreatment, but it is saturated at the rf-power of 40W and the plasma exposure time of 2min. To increase the rf-power and the plasma exposure time further would increase the plasma radiation damage for the Si substrate. Therefore, 40W and 2min are the optimal process conditions for the hydrogen pretreatment. Copper nucleation is enhanced by hydrogen plasma pretreatment because the plasma treatment removes the nitrogen and oxygen atoms from the Ta-Si-N film surface. Since Ta-Si is a substrate more favorable for Cu nucleation than Ta-Si-N(O), Cu nucleation on the Ta-Si-N film is enhanced by hydrogen plasma pretreatment of the Ta-Si-N film surface.

Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure

2012 ◽  
Vol 101 (23) ◽  
pp. 231601 ◽  
Author(s):  
Laura B. Ruppalt ◽  
Erin R. Cleveland ◽  
James G. Champlain ◽  
Sharka M. Prokes ◽  
J. Brad Boos ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Plasma Exposure ◽  
Layer Deposition

Ex Situ and in Situ Methods for Oxide and Carbon Removal from AlN and GaN Surfaces

1995 ◽  
Vol 395 ◽  
Author(s):  
Sean W. King ◽  
Laura L. Smith ◽  
John P. Barnak ◽  
Ja-Hum Ku ◽  
Jim A. Christman ◽  
...  
Keyword(s):  
Thermal Desorption ◽  
Hydrogen Plasma ◽  
Surface Oxide ◽  
Ex Situ ◽  
Plasma Exposure ◽  
Free Surfaces ◽  
In Situ Methods ◽  
Acids And Bases ◽  
Oxidation In Air

ABSTRACTExposure to numerous acids and bases and UV/O3 oxidation were used to determine the best ex situ cleaning techniques for the (0001) surfaces of AIN and GaN. HF and HCI were the most effective in removing the oxide from AIN and GaN, respectively. However, AES and XPS revealed the surfaces to be terminated with F and CI which inhibited re-oxidation prior to loading into vacuum. TPD showed mat temperatures of 650 and 850°C are necessary to thermally desorb the CI and F, respectively. UV/O3 oxidation in air was not effective in removing hydrocarbons from either surface but was effective for oxide growth. In situ remote hydrogen plasma exposure at 450°C removed halogens and hydrocarbons remaining after ex situ cleaning of both AIN and GaN surfaces; however, oxide free surfaces could not be achieved. Thermal desorption of hydrocarbons from GaN in UHV was achieved at 650°C. Complete thermal desorption of the surface oxide in UHV was only achieved at temperatures > 800°C where some GaN decomposition occurred. Annealing GaN in NH3 at 700°C reduced the surface oxide without loss of surface stoichiometry.

Role of in-situ hydrogen plasma treatment on gate bias stability and performance of a-IGZO thin-film transistors

2021 ◽  
Author(s):  
Om Kumar Prasad ◽  
Srikant Kumar Mohanty ◽  
ChienHung Wu ◽  
Tsung Ying Yu ◽  
K-M Chang
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
Hydrogen Plasma ◽  
Gate Bias ◽  
Bias Stability ◽  
And Performance

EFFECT OF SMALL BULK SULFUR CONTENT AND ANNEALING TEMPERATURE ON THE INTERGRANULAR FRACTURING SUSCEPTIBILITY OF METALLIC NICKEL

2016 ◽  
Vol 23 (06) ◽  
pp. 1650050 ◽  
Author(s):  
BOUTASSOUNA DJAMAL ◽  
RENÉ LE GALL ◽  
IBEN KHALDOUN LEFKAIER
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Sulfur Content ◽  
Auger Spectroscopy ◽  
Metallic Nickel ◽  
Boundary Equilibrium ◽  
Influence Of Temperature On ◽  
Sulfide Compound ◽  
Equilibrium Segregation

In this paper, we investigate the influence of temperature on the nickel grain boundary equilibrium segregation of sulfur and the resulting intergranular fracturing susceptibility. Auger electron spectroscopy has been used to study equilibrium segregation of sulfur to the grain boundaries of a metallic nickel, with a mass bulk content of 3.6[Formula: see text]ppm in sulfur. Samples were first annealed at adequate temperatures for sufficiently large equilibrium time, and then quenched in water at room temperature. The analysis carried out shows a significant increase of sulfur concentration in the grain boundary with decreasing temperature. However, the sulfur content in the grain boundary shows a drastic shrink at 700[Formula: see text]C. This can be interpreted by the formation of an aggregate sulfide compound in the area of the grain boundaries. At 650[Formula: see text]C, in situ brittle fracture becomes unworkable and only intragranular fractures are observed. Using the results obtained through the investigation of the grain boundaries by Auger spectroscopy, the standard segregation energy is estimated as [Formula: see text].

Downstream Plasma Activated Etching of IIIV Compound Semiconductorsa

1988 ◽  
Vol 144 ◽  
Author(s):  
R. Iyer ◽  
D.L. Lile
Keyword(s):  
Activation Energy ◽  
Apparent Activation Energy ◽  
Mass Spectrometer ◽  
Vapor Phase ◽  
Compound Semiconductors ◽  
Power Input ◽  
Reaction Process ◽  
Rf Power ◽  
Carrier Gas ◽  
Etch Rates

ABSTRACTWe have demonstrated a novel downstream plasma activated vapor phase etching of III-V compound semiconductors using ethylene di bromide as the etchant. Highly reproducible surfaces and etch rates were obtained by monitoring the reaction process with a mass spectrometer. Etch rates on InP of up to 4500Å/min, at temperatures as low as 160°C, at an rf power input of 25 watts were achieved with no evident damage to the surface as indicated by PL measurements. Apparent activation energy measurements seem to suggest that the etch products might be organometallic in nature, in contrast to inorganic etch products seen in most etching studies. Etching is partially anisotropic and resulted in smoother surfaces when H2 was used as the carrier gas for the etchant instead of N2.

Sign in / Sign up

Export Citation Format

Share Document