A Low-Power High Accuracy Over Current Protection Circuit for Low Dropout Regulator

2009 ◽  
Vol E92-C (9) ◽  
pp. 1208-1214 ◽  
Author(s):  
Socheat HENG ◽  
Cong-Kha PHAM
2012 ◽  
Vol 184-185 ◽  
pp. 1613-1617
Author(s):  
Jin Fang Zhu

This article studies the embedded SPC and its application in roundness measuring system by analyzing the current roundness measurement principle and technology. With analyzing the process of data collection, date treatment and various kinds of tool graphic construction, we study the feasibility of integrating SPC into roundness measurement and finally apply the embedded SPC as pure software into roundness measuring system. We design the roundness measuring system based on embedded SPC and develop the roundness measuring system of low power consumption, high accuracy and easy application, which is suitable for industry field usage.


2012 ◽  
Vol 591-593 ◽  
pp. 2632-2635
Author(s):  
Lee Chu Liang ◽  
Roslina Mohd Sidek

A low power low-dropout (LDO) voltage regulator with self-reduction quiescent current is proposed in this paper. This proposed capacitorless LDO for Silicon-on-Chip (SoC) application has introduced a self-adjustable low-impedance circuitry at the output of LDO to attain stability critically during low output load current (less than a few hundred of micro-ampere). When the LDO load current increases, it reduces the LDO output impedance and moved the pole towards higher frequency away from the dominant pole and improving the system stability. When this happen, less amount of quiescent current is needed for the low-impedance circuitry to sustain the low output impedance. In this proposed LDO, the quiescent current that been used to sustain the low output impedance will be self-reduced when the output load current increases. Thus, the reduction of quiescent current at low output load current has tremendously improved the efficiency. The simulation results have shown a promising stability at low load current 0~1mA. The dropout voltage for this LDO is only 100mV at 1.2V supply. The proposed LDO is validated using Silterra 0.13μm CMOS process model and designed with high efficiency at low output load current.


2021 ◽  
Author(s):  
Yi Wang ◽  
Cheng Li ◽  
Yingjie Yu ◽  
Su Huang
Keyword(s):  

2021 ◽  
Author(s):  
Siqi Yang ◽  
Jiajing Fan ◽  
Jiahao Liu ◽  
Liang Chang ◽  
Shuisheng Lin ◽  
...  

2018 ◽  
Vol 15 (3) ◽  
pp. 20171191-20171191 ◽  
Author(s):  
Ivan Padilla-Cantoya ◽  
Luis Rizo-Dominguez ◽  
Jesus E. Molinar-Solis

Author(s):  
Boqiang Wu ◽  
Nianxiong Tan ◽  
Shupeng Zhong ◽  
Changyou Men ◽  
Sufang Huang

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