Effect of Injection Phenomena on Electrical Properties of pSi--nSi1--xSnx Heterojunctions

Depletion Effect ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Characteristic Segment

We studied the current-voltage characteristic of pSi--nSi1--xSnx structures in the temperature range of 293--393 K so as to find out the role of injection phenomena during electrical property formation in pSi--nSi1--xSnх heterojunctions derived from the Si1--xSnx (0 ≤ x ≤ 0.04) solid solution. We established that the current-voltage characteristic of such heterojunctions consists of two typical segments. We determined that an exponential function describes the first current-voltage characteristic segment well. In all current-voltage characteristics the exponential curve is followed by sublinear segments that do not depend on temperature. We show that the theory of injection depletion effect describes these segments well. We used the sublinear segment of the current-voltage characteristic to determine the value of the parameter a, which can be employed to calculate deep level impurity concentration leading to the appearance of the sublinear segment. We prove that the structure under investigation may be considered to be a pSi--nSi1--xSnx--n+Si1--xSnx (0 ≤ x ≤ 0.04) junction with a high-resistance nSi1--xSnx layer. The analysis results make it possible to conclude that charge carrier dissipation on both complex aggregates and nanoinclusions plays a significant role in forming electrophysical properties in the Si1--xSnx (0 ≤ x ≤ 0.04) solid solution and that epitaxial films of Si1--xSnx (0 ≤ x ≤ 0.04) solid solutions derived on silicon substrates are efficient promising materials for developing diodes operating under double injection

Эффект инжекционного обеднения в p-Si-n-(Si-=SUB=-2-=/SUB=-)-=SUB=-1-x-=/SUB=-(ZnSe)-=SUB=-x-=/SUB=- (0≤ x≤0.01) гетероструктуре

Физика и техника полупроводников ◽

10.21883/ftp.2018.09.46154.8706 ◽

2018 ◽

Vol 52 (9) ◽

pp. 1066

Author(s):

А.С. Саидов ◽

А.Ю. Лейдерман ◽

Ш.Н. Усмонов ◽

К.А. Амонов

Keyword(s):

Voltage Characteristic ◽

Experimental Results ◽

Depletion Effect ◽

Current Voltage ◽

AbstractThe current–voltage characteristics of p -Si– n -(Si_2)_1 –_ x (ZnSe)_ x (0 ≤ x ≤ 0.01) heterostructures are studied at various temperatures. It is found that the current–voltage characteristics of such structures contain a portion of a sublinear increase in the current with voltage such as V = V _0 exp( Jad ). The concentrations of deep impurities responsible for the appearance of the sublinear portion in the current–voltage characteristic are estimated. The experimental results are explained based on the theory of the injection depletion effect.

Особенности транспорта носителей заряда в структурах n-=SUP=-+-=/SUP=--n-=SUP=-0-=/SUP=--n-=SUP=-+-=/SUP=- с гетеропереходом GaAs/AlGaAs при сверхвысоких плотностях тока

Физика и техника полупроводников ◽

10.21883/ftp.2019.06.47735.9064 ◽

2019 ◽

Vol 53 (6) ◽

pp. 816

Author(s):

С.О. Слипченко ◽

А.А. Подоскин ◽

О.С. Соболева ◽

В.С. Юферев ◽

В.С. Головин ◽

...

Keyword(s):

Negative Differential Resistance ◽

Differential Resistance ◽

Voltage Characteristic ◽

Balance Model ◽

Operating Voltage ◽

A Value ◽

Current Voltage ◽

Algaas Layer ◽

AbstractThe current–voltage characteristics of n ^+-GaAs/ n ^0-GaAs/ N ^0-AlGaAs/ N ^+-AlGaAs/ n ^+-GaAs isotype heterostructures and n ^+-GaAs/ n ^0-GaAs/ n ^+-GaAs homostructures are studied. It is shown that, for a heterostructure under reverse bias providing the injection of electrons from n ^0-GaAs into N ^0-AlGaAs, the maximum operating voltage reaches a value of 48 V at a thickness of the N ^0-AlGaAs layer of 1 . 0 μm, and the current–voltage characteristic has no region of negative differential resistance. The operation of a homostructure is accompanied by a transition to the negative-differential-resistance region at a voltage of 10 V. Theoretical analysis in terms of the energy-balance model demonstrated that the reverse-biased isotype heterostructure has no negative-differential-resistance region because, in this case, the field domain does not collapse in contrast to what occurs in homostructures.

Current-Voltage Characteristic and Grain Boundary Structure in Undoped and Pr and Co Doped ZnO Bicrystals

Materials Science Forum ◽

10.4028/www.scientific.net/msf.475-479.3867 ◽

2005 ◽

Vol 475-479 ◽

pp. 3867-3870 ◽

Cited By ~ 1

Author(s):

Yukio Sato ◽

Fumiyasu Oba ◽

Masatada Yodogawa ◽

Takahisa Yamamoto ◽

Yuichi Ikuhara

Keyword(s):

Grain Boundary ◽

Voltage Characteristic ◽

The Other ◽

Boundary Structure ◽

Grain Boundary Structure ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Doped Zno ◽

Co Doped

Our recent studies on current-voltage characteristic and grain boundary structure in ZnO bicrystals are reviewed in this paper. All types of undoped ZnO bicrystals showed Ohmic characteristics. This indicates that nonlinear current-voltage characteristic cannot be generated solely by the atomic disarrangement in undoped ZnO. On the other hand, co-doped ZnO bicrystals showed nonlinear current-voltage characteristics, which depended on the types of grain boundary. It is considered that the nonlinearity depends on the Pr concentrations at the respective grain boundaries.

RESEARCH OF THE DEPENDENCE OF CURRENT-VOLTAGE CHARACTERISTICS OF p-Si-n-(Si2)1 - x - y(Ge2)x(ZnSe)y-STRUCTURES ON TEMPERATURE

Computational nanotechnology ◽

10.33693/2313-223x-2019-6-3-16-21 ◽

2019 ◽

Vol 6 (3) ◽

pp. 16-21

Author(s):

Amin Safarbaevich Saidov ◽

Kobil Asharovich Amonov ◽

Ada Yul'evna Leyderman

Keyword(s):

Solid Solution ◽

Liquid Phase ◽

Liquid Phase Epitaxy ◽

Room Temperature ◽

Experimental Results ◽

Complex Nature ◽

Silicon Substrates ◽

The Third ◽

Current Voltage ◽

The possibility of growing of the solid solution (Si2)1 - x - y (Ge2)x (ZnSe)y on silicon substrates by liquid-phase epitaxy from the tin solution - melt has been shown. The current - voltage characteristics of heterostructures at room temperature has three sections: ohmic section - I ~ V , exponential one - I ~ exp ( qV / ckT ), and the third one with cubic dependence - I ~ V3 that at increasingtemperature is replaced by the weaker dependences - I ~ V2,8, I ~ V2,5 and I ~ V2,3 at temperatures of 360, 390 and 420 K, respectively. The experimental results are explained on the basis of theoretical ideas about the complex nature of the recombination processesin these materials.

Modeling of current-voltage characteristic of the intergranular barrier in metal oxide varistor ceramics

Multidiscipline Modeling in Materials and Structures ◽

10.1108/mmms-11-2013-0066 ◽

2014 ◽

Vol 10 (3) ◽

pp. 362-378 ◽

Cited By ~ 2

Author(s):

Alexander S. Tonkoshkur ◽

Alexander V. Ivanchenko

Keyword(s):

Schottky Barrier ◽

Potential Barrier ◽

Voltage Characteristic ◽

Arbitrary Form ◽

Double Barrier ◽

Content Type ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Metal Oxide Varistor

Purpose – The purpose of this paper is to develop a generalized model of the nonlinear conductivity of varistor ceramic suitable for solving problems of prediction and control of ceramic nonlinearity, stability of varistor properties. Design/methodology/approach – The modeling of current-voltage characteristic of the intergranular barrier in metal oxide varistor ceramics is based on the development of the algorithm. It includes all the known mechanisms of electrotransfer in a wide range of voltages and currents of the current-voltage characteristics, and also takes into account the deviation of the barrier form the Schottky barrier. Findings – The models of double Schottky barrier and double barrier of arbitrary form, as well as the algorithms for calculating the current-voltage characteristics of a single intergranular potential barrier and a separate “microvaristor” with the use of the most well-established understanding of the main mechanisms of electrical are developed. The results of current-voltage characteristics modeling correspond to the existing understanding of the nonlinear electrical conductivity varistor ceramics are based on zinc oxide. The model of double barrier of arbitrary form takes into account the deviation of the barrier form the Schottky barrier which is important in predicting the deformation of the current-voltage characteristics of the varistor products in the process of degradation. Originality/value – The relation between the form of the current-voltage characteristic and the distribution profile of the donor concentration in the surface regions of the semiconductor crystallites constituting the intergranular potential barrier is established. The accumulation of donors in the space charge region leads to the increase in the current on the prebreakdown region of the current-voltage characteristic and the reduction of voltage corresponding to the breakdown region beginning of the current-voltage characteristic. The significant role of the interlayer in the formation of current-voltage characteristic of the intergranular potential barrier is shown.

Temperature dependences of the elektrophysical properties of the solid solution Si1-xSnx (0  x  0.04)

Applied Physics ◽

10.51368/1996-0948/2021-1-63-68 ◽

2021 ◽

pp. 63-68

Keyword(s):

Solid Solution ◽

Space Charge ◽

Solid Solutions ◽

Active Material ◽

Silicon Substrates ◽

Temperature Range ◽

Carrier Transfer ◽

Current Voltage ◽

Temperature Dependences ◽

The current-voltage characteristics of p-Si–n-Si1-xSnx (0  x  0.04) structures have been studied in the temperature range from 293 to 453 K. It was determined that the initial sections of the direct branches of the I–V characteristic at all temperatures are described by the expo-nential dependence of the current on the voltage, and then a quadratic section follows, which is described by the drift mechanism of carrier transfer in the regime of ohmic relaxation of the space charge. We determined the activation energies of two deep levels with values of 0.21 eV and 0.35 eV, which are assigned to interstitial Sn atoms and A-centers, respectively. The prospect of using solid solutions Si1-xSnx (0  x  0.04), obtained on silicon substrates, as an active material in the manufacture of injection diodes is substantiated.