21.2: A Low-Voltage P-type Poly-Si Integrated Driving Circuits for Active Matrix Display

2005 ◽  
Vol 36 (1) ◽  
pp. 1046 ◽  
Author(s):  
Woo-Jin Nam ◽  
Sang-Hoon Jung ◽  
Jae-Hoon Lee ◽  
Hye-Jin Lee ◽  
Min-Koo Han
Keyword(s):  
Low Voltage ◽  
Active Matrix ◽  
P Type

Electrospun p-type CuO nanofibers for low-voltage field-effect transistors

2017 ◽  
Vol 111 (14) ◽  
pp. 143501 ◽  
Author(s):  
Huihui Zhu ◽  
Ao Liu ◽  
Guoxia Liu ◽  
Fukai Shan
Keyword(s):  
Field Effect ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
P Type

Modified ITAT Model for Data Retention in Nanocrystals Based Flash Memory Gate Stack

2017 ◽  
Vol 45 ◽  
pp. 1-11
Author(s):  
Rasika Dhavse ◽  
Kumar Prashant ◽  
Chetan Dabhi ◽  
Anand Darji ◽  
R.M. Patrikar
Keyword(s):  
Flash Memory ◽  
Low Voltage ◽  
Flat Band ◽  
Data Retention ◽  
Gate Stack ◽  
Tunneling Model ◽  
Idle Mode ◽  
Direct Tunneling ◽  
Device Lifetime ◽  
P Type

This work applies combination of Direct Tunneling model and BSIM4 based ITAT model to explain the leakage of electrons from charged nanocrystals to p-type silicon substrate in data retention condition, for an ultra-thin tunnel oxide, low voltage programmable silicon nanocrystal based flash gate stack. Basic expressions of these models are modified to incorporate the nanocrystals related charge leakage in idle mode. The concept is supported by simulating these models and comparing them with the experimental data. Transition of electrons is considered as a result of Direct Tunneling and their trapping de-trapping via water related hydrogen traps. However, it is found that modified ITAT mechanism is the dominant one. Flat-band voltage shift profile fits accurately with the model with an extrapolated 10 years device lifetime without memory closure. 3 nm thick tunnel oxide and 100 nm sized nanocrystal fabrication with Electron Beam Lithography are main features of the devices.

P-107: Low Voltage Driving Color Active Matrix Electrophoretic Display

2010 ◽  
Vol 41 (1) ◽  
pp. 1646
Author(s):  
Yong Eui Lee ◽  
Sungil Woo ◽  
Young Tae Cho ◽  
Man Seop Choi ◽  
Yong Gir Choi ◽  
...  
Keyword(s):  
Low Voltage ◽  
Active Matrix ◽  
Electrophoretic Display

A Full p-Type Poly-Si TFT Shift Register for Active Matrix Displays

2010 ◽  
Vol 1245 ◽  
Author(s):  
Myoung-Hoon Jung ◽  
Hoon-Ju Chung ◽  
Young-Ju Park ◽  
Ohyun Kim
Keyword(s):  
Control Method ◽  
Light Emitting Diode ◽  
Shift Register ◽  
Active Matrix ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Active Matrix Displays ◽  
Output Load ◽  
Voltage Swing ◽  
P Type

AbstractA new shift register using p-type poly-Si thin-film transistors (TFTs) for active matrix display is proposed. It utilizes only p-type TFTs to simplify the fabrication process, and provides time-shifted output signals with a voltage swing from VSS to VDD without signal-level loss. In the proposed shift register, output is structurally separated from carry and therefore has a high immunity to output signal distortion caused by output load capacitance. We also propose a new light emitting control method using this shift register for high image quality active-matrix organic light emitting diode (AMOLED) displays. The proposed shift register was verified by simulation and measurement.

scholarly journals An AMOLED AC-Biased Pixel Design Compensating the Threshold Voltage andI-RDrop

2011 ◽  
Vol 2011 ◽  
pp. 1-6 ◽  
Author(s):  
Ching-Lin Fan ◽  
Hui-Lung Lai ◽  
Yan-Wei Liu
Keyword(s):  
Threshold Voltage ◽  
Integrated Circuit ◽  
Low Voltage ◽  
Voltage Drop ◽  
Light Emitting Diode ◽  
Power Line ◽  
Silicon Thin Film ◽  
Active Matrix ◽  
Voltage Variation ◽  
Voltage Deviation

We propose a novel pixel design and an AC bias driving method for active-matrix organic light-emitting diode (AM-OLED) displays using low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs). The proposed threshold voltage andI-Rdrop compensation circuit, which comprised three transistors and one capacitor, have been verified to supply uniform output current by simulation work using the Automatic Integrated Circuit Modeling Simulation Program with Integrated Circuit Emphasis (AIM-SPICE) simulator. The simulated results demonstrate excellent properties such as low error rate of OLED anode voltage variation (<0.7%) and low voltage drop ofVDDpower line. The proposed pixel circuit effectively enables threshold-voltage-deviation correction of driving TFT and compensates for the voltage drop ofVDDpower line using AC bias on OLED cathode.

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