scholarly journals Formation and characterization of various ZnO/SiO2-stacked layers for flexible micro-energy harvesting devices

2018 ◽  
Author(s):  
Chongsei Yoon ◽  
Buil Jeon ◽  
Giwan Yoon
Keyword(s):  
Thin Films ◽  
Energy Harvesting ◽  
Control Sample ◽  
Single Layer ◽  
Rf Magnetron Sputtering ◽  
Device Performance ◽  
Flexible Devices ◽  
Deposition Power ◽  
Energy Harvesting Devices

In this paper, we present a study of various ZnO/SiO2-stacked thin film structures for flexible micro-energy harvesting devices. Two groups of micro-energy harvesting devices, SiO2/ZnO/SiO2 micro-energy generators (SZS-MGs) and ZnO/SiO2/ZnO micro-energy generators (ZSZ-MGs), were fabricated by stacking both SiO2 and ZnO thin films, and the resulting devices were characterized. With a particular interest in the fabrication of flexible devices, all the ZnO and SiO2 thin films were deposited on ITO-coated PEN substrates using an RF magnetron sputtering technique. The effects of the thickness and/or position of the SiO2 films on the device performance were investigated by observing the variations of output voltage in comparison with that of a control sample. As a result, compared to the ZnO single-layer device, all the ZSZ-MGs showed much better output voltages, while all the SZS-MG showed only slightly better output voltages. Among the ZSZ-MGs, the highest output voltages were obtained from the ZSZ-MGs where the SiO2 thin films were deposited using a deposition power of 150 W. Overall, the device performance seems to depend significantly on the position as well as the thickness of the SiO2 thin films in the ZnO/ SiO2-stacked multilayer structures, in addition to the processing conditions.

scholarly journals Formation and Characterization of Various ZnO/SiO2-Stacked Layers for Flexible Micro-Energy Harvesting Devices

2018 ◽  
Vol 8 (7) ◽  
pp. 1127 ◽  
Author(s):  
Chongsei Yoon ◽  
Buil Jeon ◽  
Giwan Yoon
Keyword(s):  
Thin Films ◽  
Energy Harvesting ◽  
Indium Tin Oxide ◽  
Control Sample ◽  
Single Layer ◽  
Rf Magnetron Sputtering ◽  
Device Performance ◽  
Polyethylene Naphthalate ◽  
Flexible Devices ◽  
Energy Harvesting Devices

In this paper, we present a study of various ZnO/SiO2-stacked thin film structures for flexible micro-energy harvesting devices. Two groups of micro-energy harvesting devices, SiO2/ZnO/SiO2 micro-energy generators (SZS-MGs) and ZnO/SiO2/ZnO micro-energy generators (ZSZ-MGs), were fabricated by stacking both SiO2 and ZnO thin films, and the resulting devices were characterized. With a particular interest in the fabrication of flexible devices, all the ZnO and SiO2 thin films were deposited on indium tin oxide (ITO)-coated polyethylene naphthalate (PEN) substrates using a radio frequency (RF) magnetron sputtering technique. The effects of the thickness and/or position of the SiO2 films on the device performance were investigated by observing the variations of output voltage in comparison with that of a control sample. As a result, compared to the ZnO single-layer device, all the ZSZ-MGs showed much better output voltages, while all the SZS-MG showed only slightly better output voltages. Among the ZSZ-MGs, the highest output voltages were obtained from the ZSZ-MGs where the SiO2 thin films were deposited using a deposition power of 150 W. Overall, the device performance seems to depend significantly on the position as well as the thickness of the SiO2 thin films in the ZnO/SiO2-stacked multilayer structures, in addition to the processing conditions.

scholarly journals A Feasibility Study of Fabrication of Piezoelectric Energy Harvesters on Commercially Available Aluminum Foil

Energies ◽  
2019 ◽  
Vol 12 (14) ◽  
pp. 2797 ◽  
Author(s):  
Chongsei Yoon ◽  
Buil Jeon ◽  
Giwan Yoon
Keyword(s):  
Energy Harvesting ◽  
Elevated Temperatures ◽  
Aluminum Foil ◽  
Cost Effective ◽  
Device Fabrication ◽  
Point Of View ◽  
Plastic Substrate ◽  
Device Performance ◽  
Piezoelectric Energy ◽  
Energy Harvesting Devices

In this paper, we present zinc oxide (ZnO)-based flexible harvesting devices employing commercially available, cost-effective thin aluminum (Al) foils as substrates and conductive bottom electrodes. From the device fabrication point of view, Al-foils have a relatively high melting point, allowing for device processing and annealing treatments at elevated temperatures, which flexible plastic substrate materials cannot sustain because of their relatively low melting temperatures. Moreover, Al-foil is a highly cost-effective, commercially available material. In this work, we fabricated and characterized various kinds of multilayered thin-film energy harvesting devices, employing Al-foils in order to verify their device performance. The fabricated devices exhibited peak-to-peak output voltages ranging from 0.025 V to 0.140 V. These results suggest that it is feasible to employ Al-foils to fabricate energy-efficient energy harvesting devices at relatively high temperatures. It is anticipated that with further process optimization and device integration, device performance can be further improved.

Preparation and Characterization of Zn1-XMnxO Thin Films on SiO2 Substrates

2012 ◽  
Vol 560-561 ◽  
pp. 820-824
Author(s):  
Yue Zhi Zhao ◽  
Fei Xiong ◽  
Guo Mian Gao ◽  
Shi Jing Ding
Keyword(s):  
Thin Films ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Flat Surfaces ◽  
Atomic Force ◽  
Mn Content ◽  
Doped Zno ◽  
Mn Doped

Mn-doped ZnO thin films were prepared on SiO2substrates by using a radio-frequency(rf) magnetron sputtering in order to investigate structure and optical proprieties of the films. X-ray diffraction (XRD), Atomic force microscope (AFM) and UV-VIS spectrophotometry were employed to characterize the Mn-doped ZnO films. The results showed that the shape of the XRD spectrum was remarkably similar to that of the un-doped ZnO film; the film had mainly (002) peak, and indicate that the structure of the films was not disturbed by Mn-doped. The film had rather flat surfaces with the peak-to-tail roughness of about 25nm. Mn-doping changed the band gap of the films, which increased with the increase of the Mn content.

Silicon Germanium Oxide (SixGeyO1-x-y) Infrared Sensitive Material for Uncooled Detectors

2010 ◽  
Vol 1245 ◽  
Author(s):  
Reza Anvari ◽  
Qi Cheng ◽  
Muhammad Lutful Hai ◽  
Truc Phan Bui ◽  
A. J. Syllaios ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Silicon Germanium ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Germanium Oxide ◽  
Temperature Coefficient Of Resistance ◽  
Sensitive Material

AbstractThis paper presents the formation and the characterization of silicon germanium oxide (SixGeyO1-x-y) infrared sensitive material for uncooled microbolometers. RF magnetron sputtering was used to simultaneously deposit Si and Ge thin films in an Ar/O2 environment at room temperature. The effects of varying Si and O composition on the thin film's electrical properties which include temperature coefficient of resistance (TCR) and resistivity were investigated. The highest achieved TCR and the corresponding resistivity at room temperature were -5.41 %/K and 3.16×103 ohm cm using Si0.039Ge0.875O0.086 for films deposited at room temperature.

Characterization of Mo-AlNxOy Thin Films Deposited by RF Magnetron Sputtering

2017 ◽  
Vol s1 (1) ◽  
Author(s):  
Thyago Santos Braga ◽  
Marcos Massi ◽  
Argemiro Soares Silva Sobrinho ◽  
Fabio Dondeo Origo ◽  
Choyu Otani
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering

Thermoelectric Characterization of Ti and In Double-Doped Cobalt Antimony Thin Films

2016 ◽  
Vol 847 ◽  
pp. 143-147
Author(s):  
Ya Dan Li ◽  
Zhuang Hao Zheng ◽  
Ping Fan ◽  
Jing Ting Luo ◽  
Guang Xing Liang ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Flexible Substrate ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Alloy Target ◽  
Diffraction Peaks ◽  
Thermoelectric Thin Films ◽  
Antimony Alloy

CoSb3 thermoelectric thin films were prepared on polyimide flexible substrate by radio frequency (RF) magnetron sputtering technology using a cobalt antimony alloy target. Ti and In were added into CoSb3 thin films by co-sputtering. The influence of Ti and In on the thermoelectric properties of CoSb3 thin films was investigated. X-ray diffraction result shows that the major diffraction peaks of all the thin films match the standard peaks related to the CoSb3 phase. The sample has best thermoelectric properties when the Ti sputtering time was 1min and In sputtering time was 30 seconds.

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