scholarly journals Calculation of the position of spectral lines in the intermediate coupling approximation taking into account the interaction of configurations

2021 ◽  
pp. 1-20
Author(s):  
Ilia Yurievich Vichev ◽  
Dmitrii Andreevich Kim ◽  
Anna Dmitrievna Solomyannaya ◽  
Alexander Sergeevich Grushin ◽  
Boris Leonidovich Iartsev
Keyword(s):  
Electrostatic Interaction ◽  
Ritz Method ◽  
Orbit Interaction ◽  
Spectral Lines ◽  
Spin Orbit ◽  
Intermediate Type ◽  
Intermediate Coupling ◽  
Spin Orbital ◽  
Coupling Approximation ◽  
Type Bond

When modeling experimental spectra, special attention is paid to the accuracy of the position of spectral lines, which in many-electron ions depends not only on the spin-orbital and electrostatic interaction, but also on the interaction of configurations. In order to improve the THERMOS complex on the basis of an intermediate-type bond, a module was developed that uses the Ritz method to calculate the splitting of ion levels due to the spin-orbit interaction, taking into account the interaction of configurations. Comparisons of the results obtained for lithium and iron plasma are made.

Spin-Orbit Coupling Versus Exchange Interaction in Actinide Metals

2008 ◽  
Vol 1104 ◽  
Author(s):  
Gerrit van der Laan ◽  
Kevin Thomas Moore
Keyword(s):  
Orbit Interaction ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Intermediate Coupling ◽  
Sum Rule ◽  
Transmission Electron ◽  
Forbidden Transition ◽  
Rule Analysis ◽  
Electron Energy Loss ◽  
Versus Exchange

AbstractThe electronic structure of the actinide metals, Th, U, Np, Pu, Am, and Cm, is investigated using electron energy-loss spectroscopy (EELS) in a transmission electron microscope, together with many-electron spectral calculations. At the N4,5 edge, sum rule analysis gives the angular part of the spin-orbit interaction per hole, showing that while light metals (Th and U) follow LS coupling, heavier metals (Pu, Am, and Cm) follow intermediate coupling of the 5f states. The intermediate coupling is near the jj limit for Pu and Am, but strongly shifted towards the LS coupling limit for Cm. At the O4,5 edge many-electron spectral calculations show that the prepeak corresponds to a “forbidden” transition.

scholarly journals Effect of spin-orbital interaction on continuous and jumpwise reversal magnetization in [Mn(II)(HL)(H2O)][Mn(III)(CN)6]·2H2O molecular ferrimagnet

2018 ◽  
Vol 185 ◽  
pp. 04016
Author(s):  
Marina Kirman ◽  
Roman Morgunov
Keyword(s):  
Time Series ◽  
Fourier Transform ◽  
Orbit Interaction ◽  
Orbital Interaction ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Spin Orbital ◽  
Noise Statistic ◽  
Distribution Of Magnetization ◽  
Spin Orbital Interaction

Magnetic jumps were revealed during the magnetization reversal of [Mn(II)(HL)(H2O)][Mn(III)(CN)6]·2H2O molecular ferrimagnet. Amplitudes of the jumps were 0.01 – 0.1 % of the saturation magnetization. Fourier transform of the time series of jumps magnetization indicates that frequency spectrum is close to the white noise. Statistic distribution of the jumps versus time reveals the appearance of the most jumps at the beginning of the demagnetization. Effect of spin-orbit coupling on statistical distribution of magnetization jumps was considered by comparison of two compounds with different single ion anisotropies. The increase of spin-orbit interaction leads to the decrease of power of spectral density of magnetization jumps.

Enhanced thermoelectric properties of polycrystalline CuCrS2-xSex (x = 0, 0.5, 1.0, 1.5, 2) samples by replacing chalcogens and sintering

2021 ◽  
Author(s):  
Anatoly Romanenko ◽  
Galina Chebanova ◽  
Ivan Katamanin ◽  
Michael Drozhzhin ◽  
Sofia Artemkina ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Grain Boundaries ◽  
Thermoelectric Properties ◽  
Orbit Interaction ◽  
Orbital Interaction ◽  
Spin Orbit ◽  
Spin Orbital ◽  
Spin Orbit Interaction ◽  
Spin Orbital Interaction ◽  
Strong Spin

Abstract The optimization of thermoelectric properties of the CuCrS2-xSex (x = 0, 0.5, 1.0, 1.5, 2) samples was achieved by substitution in anionic sublattice and sintering at high temperature. The maximum power factor PF ~ 0.3 mW/m•K^2 among a series of samples with chalcogen substitution was obtained for CuCrS0.5Se1.5 sample at T=300 K. The sintering made it possible to obtain the maximum value PF ~ 2.1 mW/m•K2 for CuCrSe2 sample. This is due to a more than threefold increase in the thermoelectric power S(T) in CuCrSe2 sample with a spin-orbital interaction in comparison with CuCrS0.5Se1.5 sample with the same optimal electrical conductivity σ (σ300K ~ 100 S/cm), but without spin-orbital interaction. In CuCrSe2 sample, sintering effectively reduced the s to an optimal value, suppressed of the magnetic phase transition in the range of 50-100 K, and the weak localization were replaced by weak antilocalization indicating the appearance of strong spin-orbit interaction below 20 K. As a result, an additional contribution to the S(T) appeared due to the filtration of current carriers caused by the strong spin-orbit interaction. The effect of grain boundaries on the properties σ(T) and S(T) of the samples was investigated. It was established that polycrystalline samples with a high sulfur content were low-conductivity materials consisting of high-conductivity crystallites with the charge carriers concentration n ~ 1020 cm-3 separated by low-conductivity grain boundaries with fluctuation-induced tunneling conductivity. Both the replacement of sulfur with selenium and sintering led to a decrease in the energy barriers connecting grain boundaries. Selenium-dominated samples (CuCrS0.5Se1.5 and CuCrSe2) had high electrical conductivity with negligible energy barriers between grain boundaries. Logarithmic quantum corrections to the electrical conductivity was observed below 20 K, which indicated a quasi-two-dimensional electron transport in these samples.

Spin generation and manipulation based on spin-orbit interaction in semiconductors

2017 ◽  
Author(s):  
J. Nitta
Keyword(s):  
Magnetic Field ◽  
Orbit Interaction ◽  
Degree Of Freedom ◽  
Effective Magnetic Field ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Spin Degree ◽  
Dimensional Electron Gas ◽  
Spin Orbit Interactions ◽  
Electrical Generation

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.

scholarly journals Dirac nodal lines protected against spin-orbit interaction in IrO2

2019 ◽  
Vol 3 (6) ◽  
Author(s):  
J. N. Nelson ◽  
J. P. Ruf ◽  
Y. Lee ◽  
C. Zeledon ◽  
J. K. Kawasaki ◽  
...  
Keyword(s):  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Nodal Lines

scholarly journals Low-symmetry nanowire cross-sections for enhanced Dresselhaus spin-orbit interaction

2021 ◽  
Vol 103 (19) ◽  
Author(s):  
Miguel J. Carballido ◽  
Christoph Kloeffel ◽  
Dominik M. Zumbühl ◽  
Daniel Loss
Keyword(s):  
Cross Sections ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Low Symmetry

scholarly journals Strong and tunable spin–orbit interaction in a single crystalline InSb nanosheet

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Yuanjie Chen ◽  
Shaoyun Huang ◽  
Dong Pan ◽  
Jianhong Xue ◽  
Li Zhang ◽  
...  
Keyword(s):  
Layer Structure ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Device Layer ◽  
Physical Origin ◽  
Quantum Devices ◽  
Spin Orbit Interaction ◽  
Topological Quantum ◽  
Narrow Bandgap ◽  
Dual Gate

AbstractA dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin–orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by applying a voltage over the dual gate, efficiently tuning of the spin–orbit interaction in the InSb nanosheet can be achieved. We also find the presence of an intrinsic spin–orbit interaction in the InSb nanosheet at zero dual-gate voltage and identify its physical origin as a build-in asymmetry in the device layer structure. Having a strong and controllable spin–orbit interaction in an InSb nanosheet could simplify the design and realization of spintronic deceives, spin-based quantum devices, and topological quantum devices.

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