scholarly journals Quantitative Investigation of the Morphologically Corrugated CVD-grown Graphene Monolayer Surface with a Nanoparticle-on-Mirror system

2022 ◽  
Author(s):  
Won-Hwa Park
Keyword(s):  
Sheet Resistance ◽  
Carrier Mobility ◽  
Chemical Vapor ◽  
High Specific Surface Area ◽  
Au Nanoparticle ◽  
Graphene Monolayer ◽  
Lower Sheet ◽  
The Status ◽  
Grown Graphene ◽  
Lower Sheet Resistance

Abstract Graphene can be used as a starting material for the synthesis of useful nano-complexes for flexible, transparent electrodes, therapeutic, bio-diagnostics and bio-sensing. In order to apply graphene in the medical field, chemical vapor deposition (CVD) method has been mainly utilized considering its large and near-homogenious carbon constituents. Especially, the less degree of perturbation of graphene monolayer (GM), which is followed by the underneath catalytic Cu surface morphology, is very crucial in terms of providing the suspended GM and relatively fluent lateral carrier mobility with lower sheet resistance value. In this work, we can suggest a surface-Enhanced Raman Spectroscopic (SERS) indicator in a quantitative way on the status of z-directional morphological corrugation of a CVD–grown GM (CVD-GM) by applying a Nanoparticle-on-Mirror (NPoM) system composed of Au nanoparticle (NP) / CVD-GM / Au thin film (TF) plasmonic junction structure. A new (or enhanced) Radial Breathing Like Mode (RBLM) SERS signal around ~150 cm-1 from CVD-GM spaced in NPoM is clearly observed by employing a local z-polarized incident field formed at the Au NP–Au TF plasmonic gap junctions. With this observation, the value of I[out-of-plane, RBLM] / I[in-plane, [2D] at certain domains, it can be suggested as a new optical nano-metrology value to relatively determine between lower z-directional morphological corrugation (or protrusion) status of a CVD-GM spaced in our NPoM system (lower I[RBLM] / I[2D] value) and higher degree of lateral carrier mobility of the CVD-GM associated with lower sheet resistance values as a result of higher blue-shifted Raman in-plane (G, 2D) peak maximum position. Furthermore, we will also expect the bio-sensing performances by utilizing the high specific surface area and ultrahigh flexibility of the CVD-GM in one of the future prospective works such as pressure-strain, strain-to-electricity and chemical-coupled sensor via I[RBLM] / I[2D] values.

scholarly journals Size Effects in Ruthenium-Based Thick-Film Resistors: Rutile vs. Pyrochlore-Based Resistors

1991 ◽  
Vol 14 (3) ◽  
pp. 163-173 ◽  
Author(s):  
M. Prudenziati ◽  
F. Sirotti ◽  
M. Sacchi ◽  
B. Morten ◽  
A. Tombesi ◽  
...  
Keyword(s):  
Size Effect ◽  
Thick Film ◽  
Sheet Resistance ◽  
Firing Temperature ◽  
Size Effects ◽  
Conductive Phase ◽  
Lower Sheet ◽  
Lower Sheet Resistance

The size effect, namely the change of sheet resistance, Rsas a function of resistor length, has been investigated in layers whose conductive phase evolves from Pb-rich (Ru-deficient pyrochlores) to Pb2Ru2O6.5and finally to RuO2by increasing the firing temperature. It is found that Bi diffusion from the terminations is responsible for lower sheet resistance values in shorter resistors whatever the conductive phase is. On the contrary, Ag diffusion is responsible for lower sheet resistance values in shorter resistors only in the case of ruthenate conductive grains while the reverse is observed in RuO2-based layers. Size effect can be suppressed with Pt/Au-based terminations provided that no Bi is contained and with Au-metallorganic-based contact provided that the peak firing temperature is not too high.

scholarly journals Directed self-assembly of rhombic carbon nanotube nanomesh films for transparent and stretchable electrodes

2015 ◽  
Vol 3 (10) ◽  
pp. 2319-2325 ◽  
Author(s):  
Sehee Ahn ◽  
Ayoung Choe ◽  
Jonghwa Park ◽  
Heesuk Kim ◽  
Jeong Gon Son ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Sheet Resistance ◽  
Self Assembly ◽  
Lower Sheet ◽  
Mechanical Durability ◽  
Lower Sheet Resistance ◽  
Nanotube Films

Directed self-assembly of carbon nanotubes into 2D rhombic nanomesh films results in greatly lower sheet resistance, higher stretchability, and better mechanical durability than those of random carbon nanotube films.

Comparative Studies of Transparent Conductive Electrodes Based on Silver Nanowires and Carbon Nanotubes

2015 ◽  
Vol 778 ◽  
pp. 75-78
Author(s):  
Hai Yan Hao ◽  
Lei Dai ◽  
Zhe Li ◽  
Kam Hung Low
Keyword(s):  
Carbon Nanotubes ◽  
Contact Resistance ◽  
Sheet Resistance ◽  
Comparative Studies ◽  
Mechanical Stability ◽  
Silver Nanowires ◽  
Lower Sheet ◽  
Transparent Conductive Electrodes ◽  
Lower Sheet Resistance

The effects of reducing the contact resistance of AgNW networks by using TiO2and PEDOT:PSS were compared. The AgNW+PEDOT:PSS TCE was able to give a lower sheet resistance of 30~60Ω/□, while the AgNW+TiO2gave a relatively higher, but still practical value of 85~125Ω/□. Then the AgNW+PEDOT:PSS TCE was further compared with the SWCNT+PEDOT:PSS TCE, and it was found the SWCNT+PEDOT:PSS TCE had a lower conductivity of 70~110Ω/□ but a superior long-term mechanical stability.

scholarly journals Novel stretchable thermochromic transparent heaters designed for smart window defroster applications by spray coating silver nanowire

RSC Advances ◽  
2019 ◽  
Vol 9 (61) ◽  
pp. 35786-35796 ◽  
Author(s):  
Loganathan Veeramuthu ◽  
Bo-Yu Chen ◽  
Ching-Yi Tsai ◽  
Fang-Cheng Liang ◽  
Manikandan Venkatesan ◽  
...  
Keyword(s):  
Sheet Resistance ◽  
Tensile Strain ◽  
Spray Coating ◽  
Silver Nanowire ◽  
Good Stability ◽  
Smart Window ◽  
High Transparency ◽  
Lower Sheet ◽  
Lower Sheet Resistance

The as-designed heaters proved to be excellent candidates for employment in window defrosters, as they satisfy the essential prerequisites such as lower sheet resistance, high transparency, mechanical robustness and good stability to tensile strain.

Application of RTA To Bipolar Ic'S

1987 ◽  
Vol 92 ◽  
Author(s):  
Robert H. Reuss ◽  
Thomas P. Bushey
Keyword(s):  
Sheet Resistance ◽  
Design Rule ◽  
Actual Process ◽  
Gate Delay ◽  
Poly Silicon ◽  
Lower Sheet ◽  
Lower Sheet Resistance

ABSTRACTRTA has been investigated for a variety of applications including implant anneal and modification of poly silicon. However, little has been reported on the integration of RTA into actual process flows. We describe here results for bipolar IC's with RTA for the fabrication of shallower junctions and lower sheet resistance (Rs) poly electrodes. For a successful bipolar IC, not only are good diode characteristics and related transistor parameters important, but also, resistor behavior, uniformity, and yield are critical. An AG Heatpulse system was used to successfully anneal the emitter implant of 2.0 um design rule bipolar IC's. The yield and variation in gate delay were comparable to furnace annealed counterparts. These results are especially encouraging since both transistor performance and resistor matching are critical for the circuits tested. However, significant improvement in gate delay was not observed.

Effect of Ge Pre-amorphization on Junction Characteristics for Low Energy B Implants

2000 ◽  
Vol 610 ◽  
Author(s):  
Jinning Liu ◽  
Sandeep Mehta
Keyword(s):  
Sheet Resistance ◽  
Low Energy ◽  
Junction Depth ◽  
Semiconductor Processing ◽  
Rapid Thermal Anneal ◽  
Lower Sheet ◽  
N Source ◽  
Energy Regime ◽  
Spike Anneal ◽  
Lower Sheet Resistance

AbstractThe drive towards developing deep sub-micron CMOS devices places more challenges on semiconductor processing. From the standpoint of doping technology, the challenge is to achieve ultra-shallow p+/n source/drain extension junctions for PMOS. Among the various approaches being pursued to meet this challenge, pre-amorphization was used to curtail channeling of the as-implanted Boron. The effect of pre-amorphization on junction depth and junction sheet resistance in the ultra-low implant energy regime is investigated in this study. Pre-amorphization was achieved with Ge implant. B was implanted at energies of 250eV to 5keV and at a dose of 1×1015cm−2 into crystalline and pre-amorphized wafers. Both spike anneal at 1050°C and furnace anneal at 500°C to 750°C were performed after B implants. In all spike anneal cases, the pre-amorphized wafers exhibit higher sheet resistance and shallower junction depth than crystalline wafers. In all furnace anneal cases, shallower junction depth as well as lower sheet resistance can be achieved with pre-amorphized wafers. Higher pre-amorphization energy induces lower sheet resistance after both furnace and rapid thermal anneal (RTA).

scholarly journals Efficiency Improvement by Deeper Emitter with Lower Sheet Resistance for Uniform Emitters

2011 ◽  
Vol 8 ◽  
pp. 515-520 ◽  
Author(s):  
Y. Komatsu ◽  
M. Koorn ◽  
A.H.G. Vlooswijk ◽  
P.R. Venema ◽  
A.F. Stassen
Keyword(s):  
Sheet Resistance ◽  
Efficiency Improvement ◽  
Lower Sheet ◽  
Lower Sheet Resistance

Influence of the Distribution of Tail States in a-Si:H on the Field Dependence of Carrier Drift Mobilities

2004 ◽  
Vol 808 ◽  
Author(s):  
Monica Brinza ◽  
Evguenia V. Emelianova ◽  
André Stesmans ◽  
Guy J. Adriaenssens
Keyword(s):  
Field Dependence ◽  
Carrier Mobility ◽  
Transport Model ◽  
Chemical Vapor ◽  
Gaussian Component ◽  
Dispersive Transport ◽  
Exponential Distributions ◽  
Band Tail ◽  
Multiple Trapping ◽  
Gaussian Density

ABSTRACTExponential distributions of tail states have been able, within the framework of a multiple-trapping transport model, to account rather well for the time-of-flight photoconductivity transients that are measured with ‘standard’ a-Si:H, i.e. material prepared by plasma-enhanced chemical vapor deposition at ∼250°C. A field-dependent carrier mobility in the dispersive transport regime is part of the observations. However, samples prepared in an expanding thermal plasma, although still exhibiting the dispersive transients, fail to show this field dependence. The presence of a Gaussian component in the density of valence-band tail states can account for such behavior for the hole transients. Nanoscale ordered inclusions in the amorphous matrix are thought to be responsible for the Gaussian density of states contribution.

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