Influence of the Distribution of Tail States in a-Si:H on the Field Dependence of Carrier Drift Mobilities

2004 ◽  
Vol 808 ◽  
Author(s):  
Monica Brinza ◽  
Evguenia V. Emelianova ◽  
André Stesmans ◽  
Guy J. Adriaenssens
Keyword(s):  
Field Dependence ◽  
Carrier Mobility ◽  
Transport Model ◽  
Chemical Vapor ◽  
Gaussian Component ◽  
Dispersive Transport ◽  
Exponential Distributions ◽  
Band Tail ◽  
Multiple Trapping ◽  
Gaussian Density

ABSTRACTExponential distributions of tail states have been able, within the framework of a multiple-trapping transport model, to account rather well for the time-of-flight photoconductivity transients that are measured with ‘standard’ a-Si:H, i.e. material prepared by plasma-enhanced chemical vapor deposition at ∼250°C. A field-dependent carrier mobility in the dispersive transport regime is part of the observations. However, samples prepared in an expanding thermal plasma, although still exhibiting the dispersive transients, fail to show this field dependence. The presence of a Gaussian component in the density of valence-band tail states can account for such behavior for the hole transients. Nanoscale ordered inclusions in the amorphous matrix are thought to be responsible for the Gaussian density of states contribution.

Variable Temperature Measurement on Operating Pentacene-Based OTFT

2008 ◽  
Vol 1091 ◽  
Author(s):  
Hung-Keng Chen ◽  
Po-Tsun Liu ◽  
Ting-Chang Chang ◽  
S.-L. Shy
Keyword(s):  
Conduction Mechanism ◽  
Variable Temperature ◽  
Electrical Measurement ◽  
Isokinetic Temperature ◽  
Trap States ◽  
Band Tail ◽  
Thermally Activated ◽  
Multiple Trapping ◽  
Higher Temperature ◽  
Release Model

AbstractVariable temperature electrical measurement is well-established and used for determining the conduction mechanism in semiconductors. There is a Meyer¡VNeldel relationship between the activation energy and the prefactor with a Meyer¡VNeldel energy of 30.03 meV, which corresponds well with the isokinetic temperature of about 350 K. Therefore, the multiple trapping and release model is properly used to explain the thermally activated phenomenon. By the method, an exponential distribution of traps is assumed to be a better representation of trap states in band tail. Samples with higher temperature during measurement are observed to show better mobility, higher on-current and lower resistance, which agree well with the multiple trapping and release model proposed to explain the conduction mechanism in pentacene-based OTFTs.

Dispersive transport and multiple trapping in solid N2

1988 ◽  
Vol 40-41 ◽  
pp. 191-192 ◽  
Author(s):  
G. Zumofen ◽  
M. Loher ◽  
K. Dressler
Keyword(s):  
Dispersive Transport ◽  
Multiple Trapping ◽  
Solid N2

Photoluminescence in B-doped μc-Si:H

1992 ◽  
Vol 283 ◽  
Author(s):  
S. Q. Gu ◽  
J. M. Viner ◽  
P. C. Taylor ◽  
M. J. Williams ◽  
W. A. Turner ◽  
...  
Keyword(s):  
Broad Band ◽  
Chemical Vapor ◽  
Boron Doping ◽  
Dark Conductivity ◽  
Microcrystalline Silicon ◽  
Band Tail ◽  
Pl Spectra ◽  
Photothermal Deflection Spectroscopy ◽  
Photothermal Deflection ◽  
Hydrogenated Amorphous

ABSTRACTPhotoluminescence (PL) has been investigated in hydrogenated microcrystalline silicon (μc-Si:H) samples as a function of boron doping for films prepared by remote plasma enhanced chemical vapor deposition. When the dark conductivity a is below about 10-5 S/cm, the PL spectra exhibit a shape which is close to that of the so-called band tail PL in undoped hydrogenated amorphous silicon (a-Si:H) at 77 K. When a increases, the PL intensity decreases at 77 K. For samples with a on the order of 10-3 S/cm, the PL spectra show only a narrow, low energy PL band which peaks around 0.8–0.9 eV. In these samples, the PL at higher energy is essentially not observable. This trend is similar to that which occurs in doped a-Si:H. However, for higher doping levels (σ ∼ 1 S/cm) the PL in μc-Si:H, although very weak, exhibits a broad band which contains intensity at higher energies. The absorption spectra in these samples, as measured by photothermal deflection spectroscopy (PDS), show the same relationships with the corresponding PL spectra as do the PDS spectra in doped a-Si:H.

Modelling of the Transport of Chlorinated Hydrocarbon Solvents in Groundwater: A Case Study

1985 ◽  
Vol 17 (9) ◽  
pp. 13-21 ◽  
Author(s):  
W K. H. Kinzelbach
Keyword(s):  
Transport Model ◽  
Model Parameters ◽  
Dispersive Transport ◽  
Transport Models ◽  
Chlorinated Hydrocarbon ◽  
First Order ◽  
Hydrocarbon Solvents ◽  
Simplifying Assumptions ◽  
Environmental Engineer

At present chlorinated hydrocarbon solvents rank among the major pollutants found in groundwater. In the interpretation of field data and the planning of decontamination measures numerical transport models may be a valuable tool of the environmental engineer. The applicability of one such model is tested on a case of groundwater pollution by 1,1,1,-trichloroethane. The model is composed of a horizontally 2-D flow model and a 3-D ‘random-walk' transport model. It takes into account convective and dispersive transport as well as linear adsorption and a first order decay reaction. Under certain simplifying assumptions the model allows an adequate reproduction of observed concentrations. Due to uncertainty in data and limited comparabili ty of simulated and measured concentrations the model parameters can only be estimated within bounds. The decay rate of 1,1,1-trichloroethane is estimated to lie between 0 and 0.0005 l/d.

Comparative Study of Photocarrier Dynamics in CVD-deposited CuWO4, CuO, and WO3 Thin Films for Photoelectrocatalysis

2020 ◽  
Vol 234 (4) ◽  
pp. 699-717
Author(s):  
James Hirst ◽  
Sönke Müller ◽  
Daniel Peeters ◽  
Alexander Sadlo ◽  
Lukas Mai ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Mobility ◽  
Carrier Transport ◽  
Terahertz Spectroscopy ◽  
Chemical Vapor ◽  
Photoelectrochemical Cells ◽  
Time Resolved ◽  
And Diffusion ◽  
Wo3 Thin Films ◽  
Carrier Transport Properties

AbstractThe temporal evolution of photogenerated carriers in CuWO4, CuO and WO3 thin films deposited via a direct chemical vapor deposition approach was studied using time-resolved microwave conductivity and terahertz spectroscopy to obtain the photocarrier lifetime, mobility and diffusion length. The carrier transport properties of the films prepared by varying the copper-to-tungsten stoichiometry were compared and the results related to the performance of the compositions built into respective photoelectrochemical cells. Superior carrier mobility was observed for CuWO4 under frontside illumination.

HOPPING CONDUCTION IN POLYMERS

1994 ◽  
Vol 08 (07) ◽  
pp. 847-854 ◽  
Author(s):  
Heinz Bässler
Keyword(s):  
Charge Transport ◽  
Carrier Mobility ◽  
Localized States ◽  
Time Dependent ◽  
Hopping Conduction ◽  
Moderate Degree ◽  
Density Of Localized States ◽  
Temporal Features ◽  
Gaussian Density ◽  
Energetic Disorder

The concept of hopping within a Gaussian density of localized states introduced earlier to rationalize charge transport in random organic photoconductors is developed further to account for temporal features of time of flight (TOF) signals. At moderate degree of energetic disorder (σ/kT~3.5…4.5) there is a transport regime intermediate between dispersive and quasi-Gaussian type whose signatures are (i) universal TOF signals that can appear weakly dispersive despite yielding a well defined carrier mobility and (ii) an asymmetric propagator of the carrier packet yielding a time dependent diffusivity.

Analysis of the Physical and Chemical Factors Determining Compositional Variations in the MOCVD Growth of Indium Gallium Arsenide

1990 ◽  
Vol 204 ◽  
Author(s):  
Erik O. Einset ◽  
Klavs F. Jensen ◽  
Thomas F. Kuech
Keyword(s):  
Transport Model ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Lattice Parameter ◽  
Organic Chemical ◽  
Mocvd Growth ◽  
Metal Organic ◽  
Compositional Variations ◽  
Wall Depletion ◽  
Physical And Chemical

ABSTRACTWe present an analysis of compositional variations in the growth of the compound semiconductor, InxGal-xAs, by metal organic chemical vapor deposition (MOCVD). A three dimensional transport model for fluid flow, heat, and mass transfer is solved using the finite element method. The Delta Lattice Parameter (DLP) model is used to describe the thermodynamics of the solid solution, and the Hertz-Langmuir equation is used to calculate the evaporation rate of indium from the growing crystal. Wall depletion is incorporated by allowing for explicit wall deposition of In vapor throughout the reactor.Comparison of model predictions with experimental observations by MOCVD of InGaAs in a horizontal reactor suggests that transport phenomena lead to composition variations across the substrate, and that solution thermodynamics have little effect on the InAs incorporation rate at a given deposition temperature. However, thermodynamic factors appear to influence the change in indium incorporation with growth temperature.

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