scholarly journals Optical Characteristics of GaN Thin Film Deposited by Pulsed Laser Ablation 

2021 ◽  
Author(s):  
Husam Aldin A. Abdul Amir ◽  
Ali. A. Alwahib ◽  
Makram A Fakhri ◽  
Evan T. Salim
Keyword(s):  
Thin Film ◽  
Laser Ablation ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Maximum Energy ◽  
Optical Data ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Laser Ablation Process

Abstract We present optical data on GaN thin film samples grown by pulsed laser ablation, two different pulsed laser ablation powers. The bandgap of specimens with recognizable crystallinity has been deduced from the optical spectrum data. Longtails were observed below the gap band. In specimens are entirely dependent on the powers of the laser ablation process. The specimens with the highest laser power, 2000 mJ, show that a smaller near band edge emission peaked at 3.32 eV is observed up to room temperature. The maximum energy bandgap 3.62 is possibly observed at 1500 mJ laser energy.

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

TEM Study of the Effect of the Sapphire Substrate Surface Orientation on the Microstructure of Tin Dioxide Films

2001 ◽  
Vol 7 (S2) ◽  
pp. 1220-1221
Author(s):  
J. E. Dominguez ◽  
L. Fu ◽  
X. Q. Pan
Keyword(s):  
Thin Film ◽  
Laser Ablation ◽  
High Performance ◽  
Tin Dioxide ◽  
Substrate Surface ◽  
Sensor Arrays ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Oxide Thin Film ◽  
Thin Film Sensors

Tin dioxide (SnO2) has been extensively studied and used as gas sensors to detect toxic gases such as CO, NOxand flammable gases like H2.[l] Recently, considerable researches have focused on thin film sensors due to their high performance as well as their integration compatibility with semiconductor technology for making microsensors and sensor arrays. [2] The performance of thin film sensors is remarkably influenced by the way they were fabricated.[3] Among various deposition techniques, pulsed laser deposition (PLD) has shown great prominence in the deposition of a wide variety of oxide thin film materials such as high Tc superconductors, semiconductors and dielectrics. in this work we present our experimental results on tin dioxide films deposited using pulsed laser ablation on sapphire (α -Al2O3) substrates with different surface orientations.Tin oxide films with a thickness of 100 nm were deposited on the (1012) and (0001) sapphire by pulsed laser ablation of ceramic SnO2 targets.

Photoluminescence characteristics of ZnGa2O4−xMx:Mn2+ (M=S, Se) thin film phosphors grown by pulsed laser ablation

2005 ◽  
Vol 479 (1-2) ◽  
pp. 238-244 ◽  
Author(s):  
Jong Seong Bae ◽  
Kyoo Sung Shim ◽  
Byung Kee Moon ◽  
Byung Chun Choi ◽  
Jung Hyun Jeong ◽  
...  
Keyword(s):  
Thin Film ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation
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