scholarly journals Silicon thin film transistor-based aptamer sensor for COVID-19 detection

2020 ◽  
Author(s):  
Thomas Farrow ◽  
Siriny Laumier ◽  
Ian Sandall ◽  
Harm van Zalinge

Abstract Since the beginning of the coronavirus disease 2019 (COVID-19) in December 2019 and the current lack to date of specific drugs or vaccinations to cope with the disease, it has become apparent that the surest way of dealing with this is through early diagnosis and management. Current testing has shown to be unable to rapidly and accurately provide the results required to restrict the spread. Here we report the use of an intrinsic silicon thin film transistor functionalised with aptamers designed to attach to the spike protein of COVID-19. It is shown that a linear response can be obtained in a concentration of 10 fM and 10 pM, and that the relative response is independent of the applied potential allowing a sensory system to fine tune the applied potential to facilitate the interpretation of the results.

2020 ◽  
Author(s):  
Thomas Farrow ◽  
Siriny Laumier ◽  
Steve Hall ◽  
Ian Sandall ◽  
Harm van Zalinge

Abstract Since the beginning of the coronavirus disease 2019 (COVID-19) in December 2019 and the current lack to date of specific drugs or vaccinations to cope with the disease, it has become apparent that the surest way of dealing with this is through early diagnosis and management. Current testing has shown to be unable to rapidly and accurately provide the results required to restrict the spread. Here we report feasibility for the use of an intrinsic silicon thin film transistor functionalised with aptamers designed to attach to the spike protein of COVID-19. It is shown that a linear response can be obtained in a concentration range of 1 pM to 1 nM.


2000 ◽  
Author(s):  
Pi-Fu Chen ◽  
Jr-Hong Chen ◽  
Dou-I Chen ◽  
HsixgJu Sung ◽  
June-Wei Hwang ◽  
...  

2003 ◽  
Author(s):  
Guglielmo Fortunato ◽  
Antonio Valletta ◽  
Alessandra Bonfiglietti ◽  
Massimo Cuscuna ◽  
Paolo Gaucci ◽  
...  

1993 ◽  
Vol 297 ◽  
Author(s):  
Byung Chul Ahn ◽  
Jeong Hyun Kim ◽  
Dong Gil Kim ◽  
Byeong Yeon Moon ◽  
Kwang Nam Kim ◽  
...  

The hydrogenation effect was studied in the fabrication of amorphous silicon thin film transistor using APCVD technique. The inverse staggered type a-Si TFTs were fabricated with the deposited a-Si and SiO2 films by the atmospheric pressure (AP) CVD. The field effect mobility of the fabricated a-Si TFT is 0.79 cm2/Vs and threshold voltage is 5.4V after post hydrogenation. These results can be applied to make low cost a-Si TFT array using an in-line APCVD system.


1995 ◽  
Vol 402 ◽  
Author(s):  
G. T. Sarcona ◽  
M. K. Hatalis

AbstractThin films of cobalt, nickel, and tungsten were sputtered on three types of silicon materials to explore their potential for use as silicides in thin film transistor technologies for active matrix liquid crystal displays. The metals were sputtered onto single-crystal, polycrystalline, and amorphous silicon. The metals were annealed in vacuum after deposition over temperatures ranging from 250°C to 750°C. The sheet resistance of the resulting silicide films was measured using a four point probe apparatus. Cobalt silicides with sheet resistance of less than 4 Ω/ were formed at 600°C. Nickel produced films with sheet resistance below 10 Ω/▪ at 350°C, though the surface was required to be vacuum-clean. In this study, tungsten did not produce silicides. Surface preparation has been found to be an important factor in tungsten and nickel silicidation.


2009 ◽  
Vol 30 (1) ◽  
pp. 36-38 ◽  
Author(s):  
J. H. Oh ◽  
D. H. Kang ◽  
W. H. Park ◽  
J. Jang ◽  
Y. J. Chang ◽  
...  

2003 ◽  
Vol 42 (Part 1, No. 3) ◽  
pp. 1164-1167 ◽  
Author(s):  
Du-Zen Peng ◽  
Ting-Chang Chang ◽  
Chin-Fu Liu ◽  
Ping-Hung Yeh ◽  
Po-Tsun Liu ◽  
...  

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