Aluminum-Doped Zinc Oxide as Transparent Electrode Materials

2011 ◽  
Vol 685 ◽  
pp. 6-12 ◽  
Author(s):  
Yu Long Zhang ◽  
Xian Peng Zhang ◽  
Rui Qin Tan ◽  
Ye Yang ◽  
Jun Hua Zhao ◽  
...  

Pristine and Al-doped zinc oxide nanopowders were synthesized via a surfactant-assisted complex sol-gel method, possessing a pure ZnO phase structure and controllable grain size which was characterized by X-ray diffraction and scanning electron microscopy. Using these nanopowders, the pristine and Al-doped ZnO magnetron sputtering targets were prepared following a mold-press, cold isostatical-press and schedule sintering temperature procedure. The relative density of these as-prepared targets was tested by Archimedes’ method on densitometer. All of the results were above 95 theory density percents, and the resistivity was tested on four-probe system at a magnitude of 10-2Ω cm. Related pristine ZnO thin films and Al-doped ZnO thin films were fabricated by magnetron sputtering method, respectively. The pristine and Al-doped ZnO films deposited on the quartz glass by dc sputtering owned a (002) orientation with a thickness of 350 nm at a deposition power of 100 W for two hours under an argon plasma. A good optical transparency above 80% and low resistivity of 1.60×10-3Ω cm were obtained with a deposition temperature of 573 K. The optical energy bandgap could be tailored by Al doping at 4 at.% Al.

2014 ◽  
Vol 685 ◽  
pp. 3-6
Author(s):  
Ying Lian Wang ◽  
Jun Yao Ye

Pure ZnO thin films and Ag doped ZnO thin films were prepared on quartz substrates by sol-gel process. Structural features and UV absorption spectrum have been studied by XRD and UV-Vis-Nir scanning spectrophotometer. Taking phenol as pollutants, further study of the effect of different annealing temperature and Ag dopant amount of ZnO films on photocatalytic properties was carried out. The results showed that, the optimal annealing temperature on photocatalytic degradation of phenol in this experiment was 300 °C, the best molar ratio of ZnO and Ag was 30:1, which was better than pure ZnO film greatly. Excellent adhesion, recyclable and efficient degradation Ag doped ZnO thin films were found in this experiment.


2015 ◽  
Vol 1109 ◽  
pp. 568-571
Author(s):  
Shafura Karim ◽  
Uzer Mohd Noor ◽  
M.H. Mamat ◽  
Shuhaimi Abu Bakar ◽  
Salman A.H. Alrokayan ◽  
...  

Tin-doped Zinc Oxide (Sn-doped ZnO) thin films were prepared using zinc acetate dehydrate as a starting material by sol-gel immersion method. The doping concentrations were varied at 0 at.%, 1.0 at.%, 2.0 at.% and 3.0 at.%. The synthesized samples were characterized by Field Emission Scanning Electron Microscopy (FESEM).


2017 ◽  
Vol 05 (01) ◽  
pp. 1750004
Author(s):  
R. Vettumperumal ◽  
S. Kalyanaraman ◽  
R. Thangavel

Nanocrystalline ruthenium (Ru)-doped ZnO thin films on sapphire substrate was prepared using sol–gel method by spin coating technique. The structural and I-V characteristics of Ru doped ZnO thin films were studied from the X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM) analysis and Raman spectroscopy. X-ray diffraction (XRD) results revealed that the deposited films belonged to hexagonal wurtzite structure with c-axis orientation. It is also confirmed from the Raman spectra. Enhancement of longitudinal optical (LO) phonon is observed by the strong electron–phonon interaction. An observed increment in sheet resistance with increase in dopant percentage of Ru (1–2[Formula: see text]mol%) in ZnO films was found and better I-V characteristic behavior was observed at 1[Formula: see text]mol% of Ru-doped ZnO thin films. Trap limited current flow inside the material was calculated from the log I versus log V plot in the higher voltage region.


2011 ◽  
Vol 197-198 ◽  
pp. 348-351
Author(s):  
Shan Shan Luo ◽  
Wen Kui Li ◽  
Ze Hua Zhou

N doped ZnO thin films were prepared by magnetron sputtering. The effect of bias voltage, N2flow and introducing of Al on the behavior of N doping into ZnO films were investigated. The results show that there is little help for N doping into the ZnO films by just adjusting N flow rate because the magnetron sputtering method has a relative weak ability on dissociating the N2. The data of co-doping of Al and N into ZnO films revealed that co-doping is an effective way to advance the N doping into ZnO films. The coordination of Al doping and bias voltage could help the N doping effectively.


2015 ◽  
Vol 1805 ◽  
Author(s):  
Adrian Camacho-Berrios ◽  
Victor Pantojas ◽  
Wilfredo Otaño

ABSTRACTZnO thin films were deposited using the DC pulsed magnetron sputtering technique to study how composition and structure influences their magnetic properties. Low sputtering powers and high substrate temperatures were used to increase adatom mobility during deposition, resulting in increased crystallite size and reduced residual stress in the films. Another set of ZnO films were Mn-doped using a second magnetron gun and the amount of doping was changed by controlling the RF sputtering power. For these films, the crystallite size increased with the amount of Mn. The magnetic properties of these materials were counterintuitive; not intentionally doped ZnO showed the highest magnetization and magnetization decreased with increasing Mn concentration.


2012 ◽  
Vol 502 ◽  
pp. 111-115
Author(s):  
J.H. Gu ◽  
Z.Y. Zhong ◽  
X. He ◽  
J. Hou ◽  
C.Y. Yang

Zinc oxide (ZnO) thin films were deposited by RF magnetron sputtering on glass substrates employing a sintered ceramic target and pure argon gas. The influence of substrate temperature on microstructure and optical characteristics of the deposited films were investigated by X-ray diffractometer (XRD) and spectrophotometer. The results demonstrate that all the ZnO films have preferred orientation along (002) direction. The substrate temperature significantly affects the crystalline quality and optical characteristics of the ZnO thin films. With the increase of substrate temperature, the mean grain size, lattice spacing and optical bandgap of the films increase, the dislocation density and micro strain decrease, and the average transmitance in the wavelength range of the visible spectrum also increases.


2020 ◽  
Vol 10 (5) ◽  
pp. 642-648
Author(s):  
Ehsan M. Aghkonbad ◽  
Hassan Sedghi ◽  
Maryam M. Aghgonbad

Background: Al-doped ZnO thin films are considered as a promising alternative to ITO in optoelectronic applications. In this work, Al-doped ZnO thin films were prepared using sol-gel spin coating technique. Experimental: The optical properties of the films such as refractive index, extinction coefficient, dielectric function and the absorption coefficient were examined using spectroscopic ellipsometry method in the wavelength range of 300 to 900 nm. The effect of Al doping on ZnO thin films with different Al concentrations was significant. Tauc relation was used to estimate the optical band gap energy of the films. Results: The calculated values of band gap energy were obtained between 3.10 to 3.25 eV. Also the fraction of voids was calculated using Aspnes theory. Conclusion: The free carrier concentration value was obtained in the order of 1019 cm-3.


2011 ◽  
Vol 687 ◽  
pp. 667-672 ◽  
Author(s):  
Q. Q. Dai ◽  
L. Luo ◽  
F. Y. Huang ◽  
D. P. Xiong ◽  
X.G. Tang ◽  
...  

ZnO and Eu-doped ZnO thin films were deposited on quartz substrates by reactive radio-frequency magnetron sputtering from a ZnO and Eu-doped ZnO ceramic target respectively. The properties of thin films were characterized by atom force microscope (AFM), X-ray diffraction (XRD), and photoluminescence spectra (PL). XRD reveals that the prepared thin films possess a single crystalline hexagonal wurtzite crystal structure with preferential c-axis orientation. Under above-bandgap excitation at room temperature, PL shows that ZnO films exhibit strong UV near-band-edge excitonic emission and Eu-doped ZnO thin films present UV emission and red emission from Eu3+ ions, demonstrating efficient energy transfer from the host to Eu3+ ions. The influence of annealing on the structure and optical properties of ZnO and Eu-doped ZnO thin films is studied. The efficient energy transfer from the host to Eu3+ and high luminous efficiency indicates that the prepared Eu-doped ZnO thin films are very promising materials for lighting and flat panel display application.


2011 ◽  
Vol 364 ◽  
pp. 154-158
Author(s):  
Affa Rozana Abdul Rashid ◽  
P. Susthitha Menon ◽  
N. Arsad ◽  
S. Shaari

We report the fabrication and characterization of an ultraviolet photoconductive sensing by using Al-doped ZnO films. Undoped ZnO, 1 at.% and 2 at% of Al were prepared on quartz glass by sol gel method with annealing temperature of 500°C for 1 hour. The presence of spherical shaped nanoparticles were detected for undoped ZnO by using FESEM. The absorption edge shifted to a lower wavelength by doping with Al and excitonic peak can be observed. The band gap values increased by adding Al. I-V curves reveal an ohmic line and improvement in electrical conductivity when the samples are illuminated by ultraviolet (UV) light with a wavelength of 365 nm. At 1 at.% of Al, the film have a larger increment in photocurrent response when illuminated with UV light compared to undoped ZnO and 2 at.% Al. The thin films have a longer recovery time than response time.


2013 ◽  
Vol 8-9 ◽  
pp. 301-308 ◽  
Author(s):  
Mihaela Popa ◽  
Guy Schmerber ◽  
Dana Toloman ◽  
Mihai S. Gabor ◽  
Amalia Mesaros ◽  
...  

Undoped and holmium-doped ZnO thin films were obtained, using the sol-gel method. The films were characterized by scanning electron microscopy (SEM), Hall effect measurements, electron paramagnetic resonance (EPR) spectroscopy and superconducting quantum interference device vibrating sample magnetometry (SQUID-VSM). The Hall effect measurements have indicated a n-type conduction with a resistivity of about 3.2 Ω.cm for the undoped ZnO and of about 4.5 Ω.cm for the 5 at. % Ho-doped ZnO thin films. The EPR measurements have indicated the presence of interstitial zinc in the undoped ZnO and the presence of zinc vacancies in 5 at. % Ho-doped ZnO. Ho (5 at. %)-doped ZnO films exhibit superparamagnetism at 5 K, while a low paramagnetic behavior was observed at room temperature.


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