scholarly journals Характер изменения обратного тока в туннельных МДП-диодах с фторидом кальция на Si(111) при создании дополнительного оксидного слоя

2019 ◽  
Vol 53 (6) ◽  
pp. 844
Author(s):  
А.Г. Банщиков ◽  
Ю.Ю. Илларионов ◽  
М.И. Векслер ◽  
S. Wachter ◽  
Н.С. Соколов
Keyword(s):  
Reverse Bias ◽  
Simulation Data ◽  
Voltage Range ◽  
Unexpected Behavior

AbstractThe currents flowing in metal–CaF_2– n -Si and metal–SiO_2–CaF_2– n -Si structures with the same (about 1.5 nm) fluoride thickness are compared in the reverse-bias mode. It is revealed that the current in the case of a two-layer dielectric can be notably higher within a certain voltage range. Such unexpected behavior is associated with the coexistence of both electron and hole components of the current as well as with the configuration of the SiO_2–CaF_2 barrier through which tunneling occurs. The results of measurements and explanatory simulation data are presented.

Temperature-Dependence of the Leakage Current of 3C-SiC p+-n Diodes Caused by Extended Defects

2010 ◽  
Vol 645-648 ◽  
pp. 343-346
Author(s):  
Bernd Zippelius ◽  
Michael Krieger ◽  
Heiko B. Weber ◽  
Gerhard Pensl ◽  
Hiroyuki Nagasawa ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Leakage Current ◽  
Reverse Bias ◽  
Stacking Faults ◽  
Thermal Barrier ◽  
Extended Defects ◽  
Voltage Range ◽  
Thermally Activated ◽  
Assisted Tunneling ◽  
Large Leakage Current

A large leakage current (IR) is observed at reverse bias (VR) in 3C-SiC p+-n diodes. This leakage current is caused by a high density of stacking faults (SFs). The temperature dependence of IR is studied in the temperature range from 100 K to 295 K. It turns out that IR is thermally activated for reverse voltages VR  |170| V. We propose that within this voltage range IR originates from thermally assisted tunneling of electrons and holes from band-like states of the SFs into the conduction and valence band. For VR > |170| V, the thermal barrier is strongly reduced and direct tunneling dominates. These dependences are simulated in the framework of a simplified model.

Analysis of photographic emulsions for High-Voltage Electron Microscopy

1993 ◽  
Vol 51 ◽  
pp. 452-453 ◽  
Author(s):  
James R. Kremer ◽  
Paul S. Furcinitti ◽  
Eileen O’Toole ◽  
J. Richard McIntosh
Keyword(s):  
Electron Microscope ◽  
Optical Density ◽  
High Voltage ◽  
Noise Power ◽  
Limited Information ◽  
Modulation Transfer ◽  
Transmission Microscopy ◽  
High Voltage Electron Microscopy ◽  
Voltage Range ◽  
Voltage Electron

Characteristics of electron microscope film emulsions, such as the speed, the modulation transfer function, and the exposure dependence of the noise power spectrum, have been studied for electron energies (80-100keV) used in conventional transmission microscopy. However, limited information is available for electron energies in the intermediate to high voltage range, 300-1000keV. Furthermore, emulsion characteristics, such as optical density versus exposure, for new or improved emulsions are usually only quoted by film manufacturers for 80keV electrons. The need for further film emulsion studies at higher voltages becomes apparent when searching for a film to record low dose images of radiation sensitive biological specimens in the frozen hydrated state. Here, we report the optical density, speed and relative resolution of a few of the more popular electron microscope films after exposure to 1MeV electrons.Three electron microscope films, Kodak S0-163, Kodak 4489, and Agfa Scientia 23D56 were tested with a JEOLJEM-1000 electron microscope operating at an accelerating voltage of 1000keV.

High-voltage monitoring by the fiber-optic recirculating measuring system

2020 ◽  
pp. 38-44
Author(s):  
A. V. Polyakov ◽  
M. A. Ksenofontov
Keyword(s):  
Optical Fibers ◽  
High Voltage ◽  
Optical Sensors ◽  
Electromagnetic Interference ◽  
Fiber Optic ◽  
Electric Power Industry ◽  
Measuring System ◽  
Voltage Range ◽  
External Electromagnetic Fields ◽  
Optic Communication

Optical technologies for measuring electrical quantities attract great attention due to their unique properties and significant advantages over other technologies used in high-voltage electric power industry: the use of optical fibers ensures high stability of measuring equipment to electromagnetic interference and galvanic isolation of high-voltage sensors; external electromagnetic fields do not influence the data transmitted from optical sensors via fiber-optic communication lines; problems associated with ground loops are eliminated, there are no side electromagnetic radiation and crosstalk between the channels. The structure and operation principle of a quasi-distributed fiber-optic high-voltage monitoring system is presented. The sensitive element is a combination of a piezo-ceramic tube with an optical fiber wound around it. The device uses reverse transverse piezoelectric effect. The measurement principle is based on recording the change in the recirculation frequency under the applied voltage influence. When the measuring sections are arranged in ascending order of the measured effective voltages relative to the receiving-transmitting unit, a relative resolution of 0,3–0,45 % is achieved for the PZT-5H and 0,8–1,2 % for the PZT-4 in the voltage range 20–150 kV.

Unrestrictive protein modification localization and quality control for open search of mass spectra

2018 ◽  
Author(s):  
Zhiwu An ◽  
Fuzhou Gong ◽  
Yan Fu
Keyword(s):  
Mass Spectrometry ◽  
Quality Control ◽  
Tandem Mass Spectrometry ◽  
Mass Spectra ◽  
Protein Modification ◽  
Software Tool ◽  
Tandem Mass ◽  
Simulation Data ◽  
Post Translational Modifications

We have developed PTMiner, a first software tool for automated, confident filtering, localization and annotation of protein post-translational modifications identified by open (mass-tolerant) search of large tandem mass spectrometry datasets. The performance of the software was validated on carefully designed simulation data. <br>

Nanoprobing Application on Characterization of 6T-SRAM Single Bit Failures with Different Gox Breakdown Defect

2006 ◽  
Author(s):  
Cheng-Piao Lin ◽  
Chin-Hsin Tang ◽  
Cheng-Hsu Wu ◽  
Cheng-Chun Ting
Keyword(s):  
Copper Metallization ◽  
Physical Analysis ◽  
Electrical Characteristics ◽  
Gate Leakage Current ◽  
Data Retention ◽  
Simulation Data ◽  
Failure Data ◽  
Dual Gate ◽  
Soft Breakdown

Abstract This paper analyzes several SRAM failures using nano-probing technique. Three SRAM single bit failures with different kinds of Gox breakdown defects analyzed are gross function single bit failure, data retention single bit failure, and special data retention single bit failure. The electrical characteristics of discrete 6T-SRAM cells with soft breakdown are discussed and correlated to evidences obtained from physical analysis. The paper also verifies many previously published simulation data. It utilizes a 6T-SRAM vehicle consisting of a large number of SRAM cells fabricated by deep sub-micron, dual gate, and copper metallization processes. The data obtained from this paper indicates that Gox breakdown location within NMOS pull-down device has larger a impact on SRAM stability than magnitude of gate leakage current, which agrees with previously published simulation data.

Functional Dynamics of Proteins Elucidated by Statistical Analysis of Simulation Data

2012 ◽  
Vol 2 (4) ◽  
pp. 443-451 ◽  
Author(s):  
Burak Alakent ◽  
Zeynep Kurkcuoglu ◽  
Pemra Doruker
Keyword(s):  
Statistical Analysis ◽  
Simulation Data ◽  
Functional Dynamics
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