Влияние примеси самария на локальную структуру халькогенидного стеклообразного полупроводника Se-=SUB=-95-=/SUB=-Te-=SUB=-5-=/SUB=- и механизм прохождения тока через структуры Al-Se-=SUB=-95-=/SUB=-Te-=SUB=-5-=/SUB=-<Sm>-Te
Keyword(s):
Effect of samarium doping on the local structure and morphological features of films surface of the Se95Te5 chalcogenide glassy semiconductor system have been investigated by X-ray analysis and atomic force microscopy methods, and the influence of doping on the current passing mechanism through the Al-Se95Te5 <Sm> -Te structures have been also considered by measuring the current-voltage characteristics in a stationary mode. The results obtained are interpreted on the basis of the theory of Lampert injection currents, the Elliott void-cluster model and the Mott and Street charged defect model proposed for chalcogenide glasses.
2021 ◽
Vol 2103
(1)
◽
pp. 012103
2001 ◽
Vol 1
(3)
◽
pp. 317-321
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Keyword(s):
2005 ◽
Vol 44
(No. 7)
◽
pp. L249-L252
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