S-образные вольт-амперные характеристики мощных диодов Шоттки при больших плотностях тока
Keyword(s):
Abstract The effect of a set of quasi-neutral regimes of carrier transport in semiconductors, including, along with diffusion and drift, recently discovered diffusion stimulated by quasi-neutral drift, on the characteristics of structures is successively taken into account. The order of change in the carrier transport regimes in Schottky-diode structures is investigated and the features in the I – V characteristics caused by this change are established. The results of analytical study of these features are confirmed using numerical simulation.
2019 ◽
Vol 8
(2S11)
◽
pp. 3664-3670
Keyword(s):
Keyword(s):
2015 ◽
Vol 86
◽
pp. 157-165
◽
2016 ◽
Vol 9
◽
pp. 26-32
2011 ◽
Vol 26
(6)
◽
pp. 778-788
◽
Keyword(s):
2016 ◽
Vol 45
(8)
◽
pp. 4293-4301
◽