scholarly journals Особенности газофазной эпитаксии GaAs на непланарных подложках

2020 ◽  
Vol 54 (9) ◽  
pp. 958
Author(s):  
Ю.Н. Дроздов ◽  
С.А. Краев ◽  
А.И. Охапкин ◽  
В.М. Данильцев ◽  
Е.В. Скороходов
Keyword(s):  
Aspect Ratio ◽  
Vapor Phase ◽  
Chemical Etching ◽  
Surface Shape ◽  
Organometallic Vapor Phase Epitaxy ◽  
Plasma Chemical ◽  
Reduced Pressure ◽  
Gaas Wafer ◽  
Plasma Chemical Etching ◽  
Vertical Walls

Abstract The features of the surface shape of GaAs epitaxial layers grown on grooves several micrometers wide with vertical walls and an aspect ratio close to unity are investigated. The grooves are formed on the surface of a GaAs wafer in a plasma-chemical etching installation and overgrown by organometallic vapor-phase epitaxy under reduced pressure in a reactor.

scholarly journals Experimental studies of plasma-chemical etching of glass when manufacturing diffraction and hologram optical elements

2012 ◽  
Vol 12 (5) ◽  
Author(s):  
Sergey Odinokov ◽  
Gaik Sagatelyan ◽  
Anton Goncharov ◽  
Mikhail Kovalev ◽  
Artem Solomashenko ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Experimental Studies ◽  
Plasma Chemical ◽  
Optical Elements ◽  
Plasma Chemical Etching

FREQUENCY TRIMMING OF THE STW RESONATORS WITH WORKING FREQUENCY UP TO 1 GHZ

2021 ◽  
pp. 79-85
Author(s):  
A. N. Kuznetsov ◽  
S. A. Doberstein ◽  
I. V. Veremeev
Keyword(s):  
Quality Factor ◽  
Chemical Etching ◽  
Single Port ◽  
Frequency Range ◽  
Plasma Chemical ◽  
Etching Method ◽  
Plasma Chemical Etching ◽  
Working Frequency ◽  
Frequency Trimming

This paper presents the data for frequency trimming of the single port STW resona-tors in a frequency range of 500–1000 MHz by plasma chemical etching method. The main parameters of resonators after frequency trimming are given: frequency tolerance <±100·10–6, quality factor of 8600–9500, equivalent elements needed for use of the STW resonators.

Calculating the Nominal Values of the Matching Device Installation of Plasma Chemical Etching

2019 ◽  
Vol 822 ◽  
pp. 594-600
Author(s):  
E.V. Endiiarova ◽  
Singh Ruby
Keyword(s):  
Chemical Etching ◽  
Optimal Performance ◽  
Plasma Chemical ◽  
Plasma Chemical Etching

. The calculation of nominal values of the matching device for the modified plasma chemical etching installation "Plasma 600T" was based on the estimated values of the discharge impedance (plasma). It turned out that for optimal performance, one can use a matching device consisting of two capacitors whose capacitances are: С1 [20; 1000] pF, С2 [4; 100] pF, and inductor with inductance 2,5 μH.

scholarly journals Profiling of nanostructures by scratching probe nanolithography and plasma chemical etching

2017 ◽  
Vol 256 ◽  
pp. 012023 ◽  
Author(s):  
R V Tominov ◽  
V V Bespoludin ◽  
V S Klimin ◽  
V A Smirnov ◽  
O A Ageev
Keyword(s):  
Chemical Etching ◽  
Plasma Chemical ◽  
Plasma Chemical Etching
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