Эффективная масса, подвижность носителей заряда и решеточная теплопроводность в нанокомпозитных термоэлектриках на основе халькогенидов висмута и сурьмы

In the p-type thermoelectrics based on bismuth chalcogenides and antimony with an excess bismuth, the density of states effective mass m/m0 increases in nanocomposite and nanostructured solid solutions compared with the base material obtained by the direct crystallization method. It is shown that an increase in m/m0 is associated with an increase in the effective scattering parameter reff and amplifying the relaxation time of energy, which is typical for topological insulators. The material parameter beta, proportional to the thermoelectric efficiency of ZT, at temperatures below room increases stronger in nanostructured composition than in a nanocomposite with the inclusions of SiO2 due to the growth of m/m0 and decrease the lattice thermal conductivity κL. At high temperatures in the range of 300-500 to the greatest growth of the parameter beta in the base material associated with higher mobility.

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Ultra-low lattice thermal conductivity and high thermoelectric efficiency of K3AuO

Journal of Applied Physics ◽

10.1063/5.0056604 ◽

2021 ◽

Vol 130 (4) ◽

pp. 045101

Author(s):

Qi Zhong ◽

Zhenhong Dai ◽

Junping Wang ◽

Yinchang Zhao ◽

Sheng Meng

Keyword(s):

Thermal Conductivity ◽

Lattice Thermal Conductivity ◽

Thermoelectric Efficiency

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Термоэлектрические свойства нанокомпозитного Bi-=SUB=-0.45-=/SUB=-Sb-=SUB=-1.55-=/SUB=-Te-=SUB=-2.985-=/SUB=- с микрочастицами SiO-=SUB=-2-=/SUB=-

Физика и техника полупроводников ◽

10.21883/ftp.2019.06.47721.30 ◽

2019 ◽

Vol 53 (6) ◽

pp. 751

Author(s):

А.А. Шабалдин ◽

П.П. Константинов ◽

Д.А. Курдюков ◽

Л.Н. Лукьянова ◽

А.Ю. Самунин ◽

...

Keyword(s):

Thermal Conductivity ◽

Solid Solution ◽

Electrical Conductivity ◽

Wide Temperature Range ◽

Figure Of Merit ◽

Nanostructured Material ◽

Thermoelectric Figure Of Merit ◽

Thermoelectric Efficiency ◽

Thermoelectric Figure ◽

P Type

AbstractNanocomposite thermoelectrics based on Bi_0.45Sb_1.55Te_2.985 solid solution of p -type conductivity are fabricated by the hot pressing of nanopowders of this solid solution with the addition of SiO_2 microparticles. Investigations of the thermoelectric properties show that the thermoelectric power of the nanocomposites increases in a wide temperature range of 80–420 K, while the thermal conductivity considerably decreases at 80–320 K, which, despite a decrease in the electrical conductivity, leads to an increase in the thermoelectric efficiency in the nanostructured material without the SiO_2 addition by almost 50% (at 300 K). When adding SiO_2, the efficiency decreases. The initial thermoelectric fabricated without nanostructuring, in which the maximal thermoelectric figure of merit ZT = 1 at 390 K, is most efficient at temperatures above 350 K.

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A High Thermoelectric Performance ZT in p-Type LaSe2 Crystal

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.871.203 ◽

2021 ◽

Vol 871 ◽

pp. 203-207

Author(s):

Jian Liu

Keyword(s):

Thermal Conductivity ◽

Power Factor ◽

High Power ◽

Density Functional ◽

Lattice Thermal Conductivity ◽

Phonon Transport ◽

Thermoelectric Performance ◽

Boltzmann Transport ◽

High Power Factor ◽

P Type

In this work, we use first principles DFT calculations, anharmonic phonon scatter theory and Boltzmann transport method, to predict a comprehensive study on the thermoelectric properties as electronic and phonon transport of layered LaSe2 crystal. The flat-and-dispersive type band structure of LaSe2 crystal offers a high power factor. In the other hand, low lattice thermal conductivity is revealed in LaSe2 semiconductor, combined with its high power factor, the LaSe2 crystal is considered a promising thermoelectric material. It is demonstrated that p-type LaSe2 could be optimized to exhibit outstanding thermoelectric performance with a maximum ZT value of 1.41 at 1100K. Explored by density functional theory calculations, the high ZT value is due to its high Seebeck coefficient S, high electrical conductivity, and low lattice thermal conductivity .

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Approaching the minimum lattice thermal conductivity of p-type SnTe thermoelectric materials by Sb and Mg alloying

Science Bulletin ◽

10.1016/j.scib.2019.06.007 ◽

2019 ◽

Vol 64 (14) ◽

pp. 1024-1030 ◽

Cited By ~ 10

Author(s):

Tiezheng Fu ◽

Jiazhan Xin ◽

Tiejun Zhu ◽

Jiajun Shen ◽

Teng Fang ◽

...

Keyword(s):

Thermal Conductivity ◽

Thermoelectric Materials ◽

Lattice Thermal Conductivity ◽

P Type

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The Influence of RuO2 Addition on the Thermoelectric Properties of BiSbTe Alloys

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.512-515.1651 ◽

2012 ◽

Vol 512-515 ◽

pp. 1651-1654 ◽

Cited By ~ 1

Author(s):

Yu Kun Xiao ◽

Zhi Xiang Li ◽

Jun Jiang ◽

Sheng Hui Yang ◽

Ting Zhang ◽

...

Keyword(s):

Thermal Conductivity ◽

Thermoelectric Properties ◽

Lattice Thermal Conductivity ◽

Combined Process ◽

Plasma Sintering ◽

The Matrix ◽

Spark Plasma ◽

Xrd Patterns ◽

Factor Α ◽

P Type

P-type BiSbTe/RuO2 composite was fabricated using a combined process of melting and spark plasma sintering. The XRD patterns showed that RuO2 reacted with the matrix for the RuO2 content of 1.0 wt% and 4.0 wt% samples. The measured thermoelectric properties showed that the highest electrical conductivity was obtained for the sample with 2.0 wt% RuO2. The power factor (α2σ/κ) decreased with the increase of RuO2 below 450 K. The lattice thermal conductivity was lower than that of BiSbTe over the whole temperature range for BiSbTe/2.0 wt% RuO2.

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Improved thermoelectric efficiency in p-type ZnSb through Zn deficiency

Functional Materials Letters ◽

10.1142/s1793604715500289 ◽

2015 ◽

Vol 08 (02) ◽

pp. 1550028 ◽

Cited By ~ 16

Author(s):

Qilong Guo ◽

Sijun Luo

Keyword(s):

Figure Of Merit ◽

Lattice Thermal Conductivity ◽

Hole Concentration ◽

Zn Deficiency ◽

Thermoelectric Efficiency ◽

Thermoelectric Figure ◽

Pristine Sample ◽

Zn Content ◽

P Type ◽

Content Regulation

We herein report a feasible approach to improve the thermoelectric performance of p-type ZnSb compound by Zn content regulation. It is found that Zn vacancies formed by Zn deficiency not only efficiently enhance the electrical conductivity due to the improved hole concentration but also markedly lower the lattice thermal conductivity on account of the reinforced point defect scattering of phonons. The ZnSb compound with a nominal 3 mol.% Zn deficiency shows a maximum thermoelectric figure of merit ZT of ~ 0.8 at 700 K which is a ~ 60% improvement over the pristine sample. The strategies of further enhancing the performance of ZnSb -based material have been discussed.

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Glass-like lattice thermal conductivity and high thermoelectric efficiency in Yb9Mn4.2Sb9

Journal of Materials Chemistry A ◽

10.1039/c3ta14021k ◽

2014 ◽

Vol 2 (1) ◽

pp. 215-220 ◽

Cited By ~ 79

Author(s):

Sabah K. Bux ◽

Alexandra Zevalkink ◽

Oliver Janka ◽

David Uhl ◽

Susan Kauzlarich ◽

...

Keyword(s):

Thermal Conductivity ◽

Lattice Thermal Conductivity ◽

Thermoelectric Efficiency

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p-Type skutterudites RxMyFe3CoSb12 (R, M = Ba, Ce, Nd, and Yb): Effectiveness of double-filling for the lattice thermal conductivity reduction

Intermetallics ◽

10.1016/j.intermet.2011.06.010 ◽

2011 ◽

Vol 19 (11) ◽

pp. 1747-1751 ◽

Cited By ~ 79

Author(s):

Ruiheng Liu ◽

Jiong Yang ◽

Xihong Chen ◽

Xun Shi ◽

Lidong Chen ◽

...

Keyword(s):

Thermal Conductivity ◽

Lattice Thermal Conductivity ◽

Double Filling ◽

P Type

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Thermal Conductivity of Zn4−xCdxSb3 Solid Solutions

MRS Proceedings ◽

10.1557/proc-478-103 ◽

1997 ◽

Vol 478 ◽

Cited By ~ 20

Author(s):

T. Caillat ◽

A. Borshchevsky ◽

J. -P. Fleurial

Keyword(s):

Thermal Conductivity ◽

High Performance ◽

Figure Of Merit ◽

Lattice Thermal Conductivity ◽

State Of The Art ◽

Thermoelectric Figure Of Merit ◽

Thermoelectric Figure ◽

Jet Propulsion ◽

P Type ◽

Electrical Conductors

Abstractβ-Zn4Sb3 was recently identified at the Jet Propulsion Laboratory as a new high performance p-type thermoelectric material with a maximum dimensionless thermoelectric figure of merit ZT of 1.4 at a temperature of 673K. A usual approach, used for many state-of-the-art thermoelectric materials, to further improve ZT values is to alloy β-Zn4Sb3 with isostructural compounds because of the expected decrease in lattice thermal conductivity. We have grown Zn4−xCdxSb3 crystals with 0.2≤x<1.2 and measured their thermal conductivity from 10 to 500K. The thermal conductivity values of Zn4−xCdxSb3 alloys are significantly lower than those measured for β-Zn4Sb3 and are comparable to its calculated minimum thermal conductivity. A strong atomic disorder is believed to be primarily at the origin of the very low thermal conductivity of these materials which are also fairly good electrical conductors and are therefore excellent candidates for thermoelectric applications.

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