scholarly journals Interface Resistance of an SOFC Cathode with a Pr1-xTbxO2-d Active Layer

2021 ◽  
Author(s):  
Reiichi Chiba ◽  
Rin Kawaguchi ◽  
Kazuma Horie
Keyword(s):  
Phase Transition ◽  
Solid Solution ◽  
Active Layer ◽  
Room Temperature ◽  
Single Phase ◽  
Fluorite Structure ◽  
Impedance Method ◽  
Sofc Cathode ◽  
Interface Resistance ◽  
Better Than

Abstract We investigated the use of Pr1-xTbxO2-d (x=0.0-1.0) material for active layer in SOFC cathode. Pr1-xTbxO2-d (x=0.0-1.0) in single-phase fluorite structure were successfully synthesized. They are solid solution of Pr6O11 and Tb4O7. When the x is between 0.3 and 0.6, the phase transition between room temperature and 800oC were eliminated Coin cells with GDC electrolyte and Pr1-xTbxO2-d (x=0.0-1.0) active layer and LaNi0.6Fe0.4O3 (LNF) current collecting layer were made to clarify the effect of this active layer. The interface resistance of these cathodes was measured with an AC impedance method at 800oC. The cathodes withPr1-xTbxO2-d (for all composition) active layer performed better than that of reference cathode, which has no active layer (consisting only LNF layer).

Interface Resistance of an SOFC Cathode with a Pr 1-X Tb x O 2-D Active Layer

2021 ◽  
Vol MA2021-03 (1) ◽  
pp. 142-142
Author(s):  
Reiichi Chiba ◽  
Kazuma Horie ◽  
Rin Kawaguchi
Keyword(s):  
Active Layer ◽  
Sofc Cathode ◽  
Interface Resistance

Designing room-temperature multiferroic materials in a single-phase solid-solution film

2016 ◽  
Vol 49 (36) ◽  
pp. 365001 ◽  
Author(s):  
H J Mao ◽  
C Song ◽  
B Cui ◽  
J J Peng ◽  
F Li ◽  
...  
Keyword(s):  
Solid Solution ◽  
Room Temperature ◽  
Single Phase ◽  
Multiferroic Materials ◽  
Solid Solution Film

A neutron diffraction study on a typical highly defective ceria–yttria solid solution

2002 ◽  
Vol 17 (4) ◽  
pp. 278-280 ◽  
Author(s):  
Keka R. Chakraborty ◽  
S. V. Chavan ◽  
A. K. Tyagi
Keyword(s):  
Solid Solution ◽  
Diffraction Study ◽  
Room Temperature ◽  
Fluorite Structure ◽  
Neutron Diffraction Study ◽  
Neutron Powder Diffraction ◽  
Face Centered Cubic ◽  
Aliovalent Substitution ◽  
Face Centered ◽  
The Ideal

It was seen during the phase relation studies on the CeO2–YO1.5 system that the ceria is able to accommodate a large anion deficiency caused by aliovalent substitution. A neutron powder diffraction study has been carried out at room temperature for the titled solid solution, Ce1−xYxO2−x/2 with x=0.32, which is an anion-deficient variant of the ideal fluorite structure. The structure has been found to be face centered cubic. No superlattice reflections have been observed indicating that the vacancies occupy the random positions in this highly defective solid solution. The bond distances and angles are also being reported.

scholarly journals Узкозонные гетероструктуры InAs-=SUB=-1-y-=/SUB=-Sb-=SUB=-y-=/SUB=-/InAsSbP (y=0.09-0.16) для спектрального диапазона 4-6 μm, полученные методом МОГФЭ

2019 ◽  
Vol 61 (10) ◽  
pp. 1746
Author(s):  
В.В. Романов ◽  
Э.В. Иванов ◽  
К.Д. Моисеев
Keyword(s):  
Solid Solution ◽  
Low Temperature ◽  
Active Layer ◽  
Radiative Recombination ◽  
Room Temperature ◽  
Composition Range ◽  
Narrow Gap ◽  
Spectral Maximum ◽  
Antimony Content ◽  
Metalorganic Compounds

AbstractAsymmetric n -InAs/InAs_(1 – _ y )Sb_ y / p -InAsSbP heterostructures with a narrow-gap active layer and a composition range y = 0.09–0.16 were grown by vapor phase epitaxy from metalorganic compounds. Room-temperature electroluminescence was observed at a wavelength of up to λ = 5.1 μm at a spectral maximum. The study of low-temperature electroluminescence spectra provided the possibility to establish the existence of two radiative recombination channels caused by the nature of the InAsSb/InAsSbP heterointerface. The effect produced by the chemistry of the active layer on the composition of the grown barrier layer and the formation of the InAsSb/InAsSbP heterojunction with an increase in the antimony content in the InAsSb solid solution was demonstrated.

Interface Resistance of an SOFC Cathode with a Pr 1-X Tb x O 2-D Active Layer

2021 ◽  
Vol 103 (1) ◽  
pp. 1537-1546
Author(s):  
Reiichi Chiba ◽  
Kazuma Horie ◽  
Rin Kawaguchi
Keyword(s):  
Active Layer ◽  
Sofc Cathode ◽  
Interface Resistance

Preparation and Characterization of Well-Dispersed Nd1.6Eu0.4Zr2O7 Solid Solution and its Fluorescent Behavior

2010 ◽  
Vol 97-101 ◽  
pp. 182-186
Author(s):  
Yu Ping Tong ◽  
Jing Wang ◽  
Rui Zhu Zhang ◽  
Shun Bo Zhao
Keyword(s):  
Solid Solution ◽  
Solid Solutions ◽  
Room Temperature ◽  
Single Phase ◽  
Combustion Process ◽  
Crystal Form ◽  
Scherrer Formula ◽  
Xrd Patterns ◽  
Average Size

Well-dispersed Nd1.6Eu0.4Zr2O7 solid solutions were successfully prepared by a convenient salt-assisted combustion process using glycine as fuel. The samples were characterized by XRD, Raman, TEM and HRTEM. The results showed that the Nd ion can be partially replaced by Eu ion. The substituted product was still single-phase solid solutions and the crystal form remained unchanged. TEM images showed that the Nd1.6Eu0.4Zr2O7 solid solutions were composed of well-dispersed sphere-shaped nanocrystals with an average size of 30 nm, which is consistent with the value obtained from XRD patterns using the Scherrer formula. Moreover, the fluorescent characterization of the Nd1.6Eu0.4Zr2O7 nanocrystals at 385 nm upon excitation was carried out at room temperature, and the results showed that there were some intense and prevailing emission peaks located at 590-650 nm.

scholarly journals Dispersion of dielectric permittivity and magnetic properties of solid solution PZT–PFT

2015 ◽  
Vol 33 (3) ◽  
pp. 497-500 ◽  
Author(s):  
Ryszard Skulski ◽  
Przemysław Niemiec ◽  
Dariusz Bochenek ◽  
Artur Chrobak
Keyword(s):  
Phase Transition ◽  
Solid Solution ◽  
Magnetic Properties ◽  
Room Temperature ◽  
Magnetic Phase ◽  
Dielectric Dispersion ◽  
Antiferromagnetic Ordering ◽  
Mass Magnetization ◽  
Ceramic Samples ◽  
Temperature Dependences

Abstract In this paper we present the results of investigations into ceramic samples of solid solution (1-x)(PbZr0.53Ti0.47O3)- x(PbFe0.5Ta0.503) (i.e. (1-x)PZT-xPFT) with x = 0.25, 0.35 and 0.45. We try to find the relation between the character of dielectric dispersion at various temperatures and the composition of this solution. We also describe the magnetic properties of investigated samples. With increasing the content of PFT also mass magnetization and mass susceptibility increase (i.e. magnetic properties are more pronounced) at every temperature. The temperature dependences of mass magnetization and re­ciprocal of mass susceptibility have similar runs for all the compositions. However, our magnetic investigations exhibit weak antiferromagnetic ordering instead of the ferromagnetic one at room temperature. We can also say that up to room tempera­ture any magnetic phase transition has not occurred. It may be a result of the conditions of the technological process during producing our PZT-PFT ceramics.

The preparation and electrical properties of TiO2−xFx

1988 ◽  
Vol 3 (2) ◽  
pp. 392-397 ◽  
Author(s):  
Tadashi Endo ◽  
Naoki Morita ◽  
Tsugio Sato ◽  
Masahiko Shimada
Keyword(s):  
Solid Solution ◽  
Electrical Properties ◽  
Diffraction Data ◽  
Room Temperature ◽  
Single Phase ◽  
Fluorine Content ◽  
Band Model ◽  
Electric Conduction ◽  
Electrical Resistivities ◽  
The Relationship

The substitution of fluorine for oxygen in TiO2 was investigated by the reaction of Ti2O3, TiO2, and TiF3 under conditions of 4–6.5 GPa and 700–1400°C. The single phase of TiO2−x Fx solid solution was obtained in the region of 0≤x≤0.7. According to the x-ray diffraction data, the a and c axes of the rutile-type structure linearly increased with increasing fluorine content. The electrical resistivities of TiO2−x Fx were in the range from 10 Ω cm for x = 0.3 to 850 Ω cm for x = 0.7 at 300 K and the relationship between In ρ and 1000/T was linear. The activation energies were estimated to be from 0.17 eV at x = 0.3 to 0.28 eV at x = 0.7. Also, the thermoelectric powers at room temperature changed from 250μV/K to + 50 μV/K. The mechanism of electric conduction was discussed on the basis of the extended band model of rutile.

INVESTIGATION OF THE PHASE TRANSITION IN PHTHALOCYANINE USING THE MÖSSBAUER EFFECT

1974 ◽  
Vol 35 (C6) ◽  
pp. C6-633-C6-633
Author(s):  
Dr. B. DUDREVA ◽  
Dr. R. PIRINTCHIEVA ◽  
Dr. S. GRANDE
Keyword(s):  
Phase Transition ◽  
Solid Solution ◽  
Mössbauer Effect ◽  
Room Temperature ◽  
Ferroelectric Phase ◽  
Iron Phthalocyanine ◽  
Mossbauer Effect ◽  
Metal Free ◽  
Temperature Dependences ◽  
Ferroelectric Phase Transitions

The Mössbauer effect has been used for investigation of the phase-transition in the region of the room temperature in a solid solution of metal-free H2Pc and iron phthalocyanine FePc : 9 H2Pc-1 FePc, showing properties, similar to the ferroelectric phase transitions. The temperature dependences of the parameters of the Mössbauer spectrum in the range - 160-+ 160 °C are given as well. The results from the investigation were discussed and compared with the data from γ-resonance in FePc.

Phase Transition and Dielectric Tunability of Chemical Solution Deposited (Pb0.35Sr0.65)(Zr0.5Ti0.5)O3 Thin Films on Pt/ZrO2/SiO2/Si Substrates

2007 ◽  
Vol 1034 ◽  
Author(s):  
Naba K Karan ◽  
Marilin Perez ◽  
Jose Saavedra ◽  
Dillip K Pradhan ◽  
Reji Thomas ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Seed Layer ◽  
Room Temperature ◽  
Single Phase ◽  
Frequency Dispersion ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Si Substrates ◽  
Dielectric Constant And Loss

Abstract(Pb0.35Sr0.65)(Zr0.5Ti0.5)O3 thin films were grown on Pt/ZrO2/SiO2/Si substrates by chemical solution deposition. As-deposited (pyrolysed at 500°C) films were amorphous and single phase films were obtained at temperature as low as 550°C with a 30 nm SrTiO3 seed layer. Dielectric constant and loss tangent at room temperature were 210 and 0.022, respectively at 100 kHz for the film annealed at 700°C. Frequency dispersion of the dielectric properties was low. The phase transition temperature (ferroelectric to paraelectric) was well below the room temperature and was around 220 K. The room temperature tunability and the k-factor at 500 kV/cm was around 45% and 16, respectively.

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