Численное моделирование процесса получения мультикремния методом направленной кристаллизации
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Numerical simulation of silicon multi-crystal growth by directional solidification with a square crucible is considered. We validate the use of 2D geometry of the vertical cross section as a computational domain. The model describes melt hydrodynamics, global heat transfer, thermal stresses and the evolution of the dislocation density in the crystal. The sensitivity of the stresses and dislocation density in the Si crystal to the parameters of the Alexander-Haazen model is analyzed.
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1999 ◽
Vol 61-62
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pp. 93-97
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1990 ◽
Vol 99
(1-4)
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pp. 702-706
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2011 ◽
Vol 110-116
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pp. 4451-4464
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