Исследование формирования антиотражающего покрытия каскадных солнечных элементов

Investigations of antireflection coating creating for multijunction solar cells based on AIIIBV heterostructures have been carried out. Investigated were modes of treatment of a heterostructure surface with application of plasma-chemical, liquid chemical and ion-beam etching methods. Technology for creating antireflection coating based on ТiOx/SiO2 layers was developed. Improvement of parameters of coating adhesion to the heterostructure surface and reduction of the reflection coefficient in multijunction solar cells were achieved.

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Плазмохимическое и жидкостное травление в постростовой технологии каскадных солнечных элементов на основе гетероструктуры GaInP/GaInAs/Ge

Письма в журнал технической физики ◽

10.21883/pjtf.2021.03.50568.18446 ◽

2021 ◽

Vol 47 (3) ◽

pp. 14

Author(s):

А.В. Малевская ◽

Ю.М. Задиранов ◽

Д.А. Малевский ◽

П.В. Покровский ◽

Н.Д. Ильинская ◽

...

Keyword(s):

Solar Cells ◽

Comparative Analysis ◽

Leakage Current ◽

Chemical Etching ◽

Plasma Chemical ◽

Mesa Structure ◽

Photoresist Layer ◽

Plasma Chemical Etching ◽

Liquid Chemical

Investigation and development of a separating mesa-structure creating technology for fabricating multi-junction solar cells based on the GaInP/GaInAs/Ge heterostructure has been carried out. Studied were methods of etching of heterostructure layers: liquid chemical etching in the etchants based on HBr, H2O2, K2Cr2O7 and plasma-chemical etching in the stream of operating gas BCl3. The comparative analysis of etching methods was studied. The protective masks based on photoresist layer and TiOx/SiO2 were developed. Multi-junction solar cells with low parameters of leakage current less than 10-7 A at voltage 0,5-1 V were created.

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Постростовые технологии каскадных фотоэлектрических преобразователей на основе A-=SUP=-3-=/SUP=-B-=SUP=-5-=/SUP=--гетероструктур

Журнал технической физики ◽

10.21883/jtf.2022.01.51859.210-21 ◽

2022 ◽

Vol 92 (1) ◽

pp. 108

Author(s):

А.В. Малевская ◽

Н.Д. Ильинская ◽

Ю.М. Задиранов ◽

А.А. Блохин ◽

Д.А. Малевский ◽

...

Keyword(s):

Ohmic Contacts ◽

Ion Beam ◽

Surface Current ◽

Contact Layer ◽

Antireflection Coating ◽

Ion Beam Etching ◽

Mesa Structure ◽

Structure Surface ◽

P Type ◽

Growth Technology

Investigation and development of the post-growth technology for fabricating multi-junction photovoltaic converters based on GaInP/GaInAs/Ge heterostructure has been carried out. Antireflection coating, ohmic contacts and mesa-structure forming stages have been reviewed. The technology of n+-GaAs contact layer etching with the help of plasma-chemical, liquid and ion-beam etching has been investigated. Antireflection coefficient of radiation from the heterostructure with TiOx/SiO2 (x close to 2) antireflection coating surface was less then 3% in wavelength range 450-850 nm. The value of contact resistance for n- and p-type conductivity was 3E−5 − 3E−6 ohm · cm2, the decrease of photosensitive region shading degree at increased bus-bar conductivity has been archived. The mesa-structure surface current leakage decreased to the value of E-9 A at voltage less then 1 V.

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Optimization of antireflection coating design for multijunction solar cells and concentrator systems

10.1117/12.807675 ◽

2008 ◽

Cited By ~ 9

Author(s):

Christopher E. Valdivia ◽

Eric Desfonds ◽

Denis Masson ◽

Simon Fafard ◽

Andrew Carlson ◽

...

Keyword(s):

Solar Cells ◽

Antireflection Coating ◽

Multijunction Solar Cells ◽

Coating Design

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The thickness correction of sol-gel coating using ion-beam etching in the preparation of antireflection coating

Nanostructured Thin Films X ◽

10.1117/12.2271633 ◽

2017 ◽

Author(s):

Siyu Dong ◽

Lingyun Xie ◽

Hongfei Jiao ◽

Jinlong Zhang ◽

Zhanshan Wang ◽

...

Keyword(s):

Ion Beam ◽

Sol Gel ◽

Antireflection Coating ◽

Ion Beam Etching ◽

Thickness Correction

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Ultrastructural Features of Normal and Diseased Hair Revealed by Ion Beam Etching and Freeze Fracture

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100115419 ◽

1975 ◽

Vol 33 ◽

pp. 358-359

Author(s):

M. Spector ◽

A. C. Brown

Keyword(s):

Electron Microscopy ◽

Scanning Electron Microscopy ◽

Ectodermal Dysplasia ◽

Ion Beam ◽

Freeze Fracture ◽

Ion Current ◽

Ion Beam Etching ◽

Pili Torti ◽

Argon Ion ◽

Scanning Electron

Ion beam etching and freeze fracture techniques were utilized in conjunction with scanning electron microscopy to study the ultrastructure of normal and diseased human hair. Topographical differences in the cuticular scale of normal and diseased hair were demonstrated in previous scanning electron microscope studies. In the present study, ion beam etching and freeze fracture techniques were utilized to reveal subsurface ultrastructural features of the cuticle and cortex.Samples of normal and diseased hair including monilethrix, pili torti, pili annulati, and hidrotic ectodermal dysplasia were cut from areas near the base of the hair. In preparation for ion beam etching, untreated hairs were mounted on conducting tape on a conducting silicon substrate. The hairs were ion beam etched by an 18 ky argon ion beam (5μA ion current) from an ETEC ion beam etching device. The ion beam was oriented perpendicular to the substrate. The specimen remained stationary in the beam for exposures of 6 to 8 minutes.

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Chemical Precursors for GaAs Etching with low Energy ion Beams: Chlorine adsorption on GaAs(100)

MRS Proceedings ◽

10.1557/proc-223-215 ◽

1991 ◽

Vol 223 ◽

Cited By ~ 3

Author(s):

Richard B. Jackman ◽

Glenn C. Tyrrell ◽

Duncan Marshall ◽

Catherine L. French ◽

John S. Foord

Keyword(s):

Ion Beam ◽

Ion Beams ◽

Low Energy ◽

Ion Beam Etching ◽

Chlorine Adsorption

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).

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TEM Sample Preparation by Single-Sided Low-Energy Ion Beam Etching

ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2011p0305 ◽

2011 ◽

Author(s):

Liew Kaeng Nan ◽

Lee Meng Lung

Keyword(s):

Sample Preparation ◽

Semiconductor Device ◽

Ion Beam ◽

Critical Dimension ◽

Low Energy ◽

Ex Situ ◽

Good Image Quality ◽

Ion Beam Etching ◽

Device Structures ◽

Common Technique

Abstract Conventional FIB ex-situ lift-out is the most common technique for TEM sample preparation. However, the scaling of semiconductor device structures poses great challenge to the method since the critical dimension of device becomes smaller than normal TEM sample thickness. In this paper, a technique combining 30 keV FIB milling and 3 keV ion beam etching is introduced to prepare the TEM specimen. It can be used by existing FIBs that are not equipped with low-energy ion beam. By this method, the overlapping pattern can be eliminated while maintaining good image quality.

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