scholarly journals Нелокальная динамика электронов в AlGaN/GaN-транзисторных гетероструктурах

2022 ◽  
Vol 48 (2) ◽  
pp. 44
Author(s):  
С.А. Богданов ◽  
А.А. Борисов ◽  
С.Н. Карпов ◽  
М.В. Кулиев ◽  
А.Б. Пашковский ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Drift Velocity ◽  
Strong Field ◽  
Bulk Material ◽  
Real Space ◽  
The Real ◽  
Real Space Transfer

The nonlocal electrons heating in transistor heterostructures based on gallium nitride and arsenide is compared. It is shown that if, in comparison with a pure bulk material, in the case of GaAs double doped pseudomorphic heterostructures, the real space transfer of electrons significantly reduces their drift velocity overshot in the region of a strong field, then for GaN-based heterostructures, the decrease of the drift velocity overshot in the studied cases does not exceed 30%.

scholarly journals Увеличение насыщенной скорости дрейфа электронов в pHEMT-гетероструктурах с донорно-акцепторным легированием

2018 ◽  
Vol 44 (6) ◽  
pp. 77
Author(s):  
Д.Ю. Протасов ◽  
Д.В. Гуляев ◽  
А.К. Бакаров ◽  
А.И. Торопов ◽  
Е.В. Ерофеев ◽  
...  
Keyword(s):  
Drift Velocity ◽  
High Electron Mobility Transistor ◽  
Real Space ◽  
Electron Drift Velocity ◽  
Hot Electrons ◽  
Electron Drift ◽  
High Electron ◽  
High Electron Mobility ◽  
Donor Acceptor ◽  
Real Space Transfer

AbstractField dependences of the electron-drift velocity in typical pseudomorphic high-electron-mobility transistor (pHEMT) heteroepitaxial structures (HESs) and in those with donor–acceptor doped (DApHEMT) heterostructures with quantum-well (QW) depth increased by 0.8–0.9 eV with the aid of acceptor layers have been studied by a pulsed technique. It is established that the saturated electron-drift velocity in DA-pHEMT-HESs is 1.2–1.3 times greater than that in the usual pHEMT-HESs. The electroluminescence (EL) spectra of DA-pHEMT-HESs do not contain emission bands related to the recombination in widebandgap layers (QW barriers). The EL intensity in these HESs is not saturated with increasing electric field. This is indicative of a suppressed real-space transfer of hot electrons from QW to barrier layers, which accounts for the observed increase in the saturated electron-drift velocity.

Effects of the Real-Space Transfer of Charge Carriers in the n-AlGaAs/GaAs Heterostructures with the Delta-Layers of Impurity in the Barriers

2014 ◽  
Vol 59 (7) ◽  
pp. 721-725 ◽  
Author(s):  
V.V. Vainberg ◽  
◽  
A.S. Pylypchuk ◽  
V.N. Poroshin ◽  
Sarbey O.G. Sarbey O.G. ◽  
...  
Keyword(s):  
Real Space ◽  
Charge Carriers ◽  
The Real ◽  
Real Space Transfer

scholarly journals Current Trends in Random Walks on Random Lattices

Mathematics ◽  
2021 ◽  
Vol 9 (10) ◽  
pp. 1148
Author(s):  
Jewgeni H. Dshalalow ◽  
Ryan T. White
Keyword(s):  
Random Walk ◽  
Random Walks ◽  
Real Time ◽  
Real Space ◽  
Historical Background ◽  
Escape Time ◽  
The Real ◽  
Current Trends ◽  
One Step ◽  
Time Position

In a classical random walk model, a walker moves through a deterministic d-dimensional integer lattice in one step at a time, without drifting in any direction. In a more advanced setting, a walker randomly moves over a randomly configured (non equidistant) lattice jumping a random number of steps. In some further variants, there is a limited access walker’s moves. That is, the walker’s movements are not available in real time. Instead, the observations are limited to some random epochs resulting in a delayed information about the real-time position of the walker, its escape time, and location outside a bounded subset of the real space. In this case we target the virtual first passage (or escape) time. Thus, unlike standard random walk problems, rather than crossing the boundary, we deal with the walker’s escape location arbitrarily distant from the boundary. In this paper, we give a short historical background on random walk, discuss various directions in the development of random walk theory, and survey most of our results obtained in the last 25–30 years, including the very recent ones dated 2020–21. Among different applications of such random walks, we discuss stock markets, stochastic networks, games, and queueing.

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