scholarly journals Сегнетоэлектрические свойства гетероструктуры Sr-=SUB=-0.5-=/SUB=-Ba-=SUB=-0.5-=/SUB=-Nb-=SUB=-2-=/SUB=-O-=SUB=-6-=/SUB=-/Ba-=SUB=-0.2-=/SUB=-Sr-=SUB=-0.8-=/SUB=-TiO-=SUB=-3-=/SUB=-/Si(001)

2022 ◽  
Vol 48 (5) ◽  
pp. 15
Author(s):  
Д.А. Киселев ◽  
А.В. Павленко ◽  
С.П. Зинченко
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Scanning Probe Microscopy ◽  
Field Effect ◽  
Average Crystallite Size ◽  
Scanning Probe ◽  
Si Substrate ◽  
Initial State ◽  
P Type ◽  
Potential Signal

The properties of c-oriented thin films Sr0.5Ba0.5Nb2O6 grown on a Si(001) (p-type) substrate with a pre-deposited Ba0.2Sr0.8TiO3 layer were studied using scanning probe microscopy and dielectric spectroscopy. It is established that the films Sr0.5Ba0.5Nb2O6 are characterized by low surface roughness (less than 6 nm), average crystallite size 93 nm. It is shown that there is spontaneous polarization in the film directed from its surface to the substrate, which caused the manifestation of the field effect for the case of the Si substrate with p-type conductivity without external field effect. Differences in the magnitude of the surface potential signal for regions polarized by an external electric field of different polarities (+10 and −10 V), as well as in their relaxation to the initial state, are revealed. The reasons for the established patterns are discussed.

Optoeletronic investigation of Cu2ZnSn(S,Se)4 thin-films & Cu2ZnSn(S,Se)4/CdS interface with scanning probe microscopy

2015 ◽  
Vol 59 (2) ◽  
pp. 231-236 ◽  
Author(s):  
Jiangjun Li ◽  
Yugang Zou ◽  
Ting Chen ◽  
Jinsong Hu ◽  
Dong Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Scanning Probe Microscopy ◽  
Scanning Probe ◽  
Probe Microscopy

scholarly journals Lateral electrical transport and field-effect characteristics of sputtered p-type chalcogenide thin films

2021 ◽  
Vol 119 (23) ◽  
pp. 232106
Author(s):  
Sumaiya Wahid ◽  
Alwin Daus ◽  
Asir Intisar Khan ◽  
Victoria Chen ◽  
Kathryn M. Neilson ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Transport ◽  
Field Effect ◽  
Chalcogenide Thin Films ◽  
P Type

Laser Induced Nanofabrication on Titanium Thin Films

1995 ◽  
Vol 397 ◽  
Author(s):  
B.D. Huey ◽  
D.A. Bonnell ◽  
A.D. Akhsakhalian ◽  
A.A. Gorbunov ◽  
A. Sewing ◽  
...  
Keyword(s):  
Thin Films ◽  
Scanning Probe Microscopy ◽  
Optical Resolution ◽  
Diffraction Limit ◽  
Scanning Probe ◽  
Nanometer Scale ◽  
Ion Laser ◽  
Titanium Thin Films ◽  
Novel Structures ◽  
Argon Ion

ABSTRACTIllumination of titanium thin films with an argon-ion laser has been used to fabricate nanometer scale features by localized oxidation. The laser induces a temperature gradient in the metal film, within which oxidation may occur. Due to the non-linearity of the reaction with temperature, the reaction zone can be laterally confined to regions narrower than the diffraction limit of optical resolution. Scanning probe microscopy indicates widths ranging from 105 to 600 nm and heights of 0.8 to 30 nm. The possibility of forming novel structures is demonstrated.

Bias assisted scanning probe microscopy direct write lithography enables local oxygen enrichment of lanthanum cuprates thin films

2015 ◽  
Vol 26 (32) ◽  
pp. 325302 ◽  
Author(s):  
Francesco Lavini ◽  
Nan Yang ◽  
Rama K Vasudevan ◽  
E Strelcov ◽  
S Jesse ◽  
...  
Keyword(s):  
Thin Films ◽  
Scanning Probe Microscopy ◽  
Oxygen Enrichment ◽  
Scanning Probe ◽  
Direct Write ◽  
Probe Microscopy ◽  
Local Oxygen
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