scholarly journals Special Aspects of Submicrometer MOSFETs Simulation for Low Voltage, Ultra-low Power CMOS IC Design

2018 ◽  
pp. 412-414
Author(s):  
Lebedev Sergey V. ◽  
Petrosyants Konstantin O. ◽  
Stakhin Veniamin G. ◽  
Kharitonov Igor A.
2007 ◽  
Vol E90-C (10) ◽  
pp. 2044-2050 ◽  
Author(s):  
L. H.C. FERREIRA ◽  
T. C. PIMENTA ◽  
R. L. MORENO

2013 ◽  
Vol 77 (3) ◽  
pp. 513-528 ◽  
Author(s):  
Amir Hossein Masnadi Shirazi ◽  
Shahriar Mirabbasi

Author(s):  
Kavyashree P. ◽  
Siva S. Yellampalli

In this chapter, an ultra low power CMOS Common Gate LNA (CGLNA) with a Capacitive Cross-Coupled (CCC) gm boosting scheme is designed and analysed. The technique described has been employed in literature to reduce the Noise Figure (NF) and power dissipation. In this work we have extended the concept for low voltage operation along with improving NF and also for significant reduction in current consumption. A gm boosted CCC-CGLNA is implemented in 90nm CMOS technology. It has a gain of 9.9dB and a noise figure of 0.87dB at 2.4GHz ISM band and consumes less power (0.5mw) from 0.6V supply voltage. The designed gm boosted CCC-CGLNA is suitable for low power application in CMOS technologies.


Sign in / Sign up

Export Citation Format

Share Document