scholarly journals Characterization and Synthesis of CdO and CDO1-x:Sx Films by Pulsed Laser Deposition

2021 ◽  
Vol 24 (4) ◽  
pp. 26-31
Author(s):  
Omar A. Thuhaib ◽  
◽  
Hassan Hashim ◽  

In this work, we analyze the effects of S doping on the structural and optical characteristics of pure cadmium oxide (CdO) filmsat varying concentrations of CdO1−x:Sx(X=0.2, 0.4, and 0.6), Sulfur is a chemical element with the atomic number 16 and the symbol S. The films were created using a laser-induced plasma (LIP) with a wavelength of 1064 nm and a duration of 9 ns at a pressure of 2.5×10−2mbar.X-ray diffraction studies revealed that all of the produced films are polycrystalline. The topography of the film's surface was evaluated using AFM, and the findings revealed that as the amount of doping increases, so does the grain size, along with an increase in the average roughness. The absorbance spectrum of the wavelength range (350-1100) nm was used to investigate the optical characteristics of all films. This rise might be the so-called Borsstein-Moss displacement has been viewed as a result of this. because the lowest layers of the conduction beams are densely packed with Because electrons require more energy to move, it seems as though the energy disparity widens.

2001 ◽  
Vol 15 (15) ◽  
pp. 515-521 ◽  
Author(s):  
ANIRBAN MITRA ◽  
RAJ K. THAREJA

We report second harmonic generation (SHG) from ZnO thin films deposited by the pulsed laser deposition technique at ambient oxygen pressures ranging from 10 mTorr to 1 Torr on glass substrate at room temperature (RT). The dependence of SHG on grain size and thickness of the film is discussed.


2008 ◽  
Vol 8 (8) ◽  
pp. 4135-4140 ◽  
Author(s):  
Lakshmikanta Aditya ◽  
A. Srivastava ◽  
S. K. Sahoo ◽  
P. Das ◽  
C. Mukherjee ◽  
...  

Cobalt ferrite thin films have been deposited on fused quartz substrates by pulsed laser deposition at various substrate temperatures, TS (25 °C, 300 °C, 550 °C and 750 °C). Single phase, nanocrystalline, spinel cobalt ferrite formation is confirmed by X-ray diffraction (XRD) for TS ≥ 300 °C. Conventional XRD studies reveal strong (111) texturing in the as deposited films with TS ≥ 550 °C. Bulk texture measurements using X-ray orientation distribution function confirmed (111) preferred orientation in the films with TS ≥ 550 °C. Grain size (13–16 nm for TS ≥ 300 °C) estimation using grazing incidence X-ray line broadening analysis shows insignificant grain growth with increasing TS, which is in good agreement with grain size data obtained from transmission electron microscopy.


2016 ◽  
Vol 76 ◽  
pp. 376-383 ◽  
Author(s):  
J.G. Quiñones-Galván ◽  
R. Lozada-Morales ◽  
S. Jiménez-Sandoval ◽  
Enrique Camps ◽  
V.H. Castrejón-Sánchez ◽  
...  

2019 ◽  
Vol 13 (28) ◽  
pp. 170-178
Author(s):  
Eman K. Hassan

Structural and optical properties of CdO and CdO0.99Cu0.01 thinfilms were prepared in this work. Cadmium Oxide (CdO) andCdO0.99Cu0.01semiconducting films are deposited on glass substratesby using pulsed laser deposition method (PLD) using SHG with QswitchedNd:YAG pulsed laser operation at 1064nm in 6x10-2 mbarvacuum condition and frequency 6 Hz. CdO and CdO0.99Cu0.01 thinfilms annealed at 550 C̊ for 12 min. The crystalline structure wasstudied by X-ray diffraction (XRD) method and atomic forcemicroscope (AFM). It shows that the films are polycrystalline.Optical properties of thin films were analyzed. The direct band gapenergy of CdO and CdO0.99Cu0.01 thin films were determined from(αhυ)1/2 vs. photon energy curve and found to be 2.3 eV for CdO thinfilm, comparing with that the CdO0.99Cu0.01film which found to be2.2eV. The electrical measurements shows that the conductivity andmobility of the charge carriers increase when Cu doped CdO.


2010 ◽  
Vol 108 (7) ◽  
pp. 073504 ◽  
Author(s):  
T. S. Ko ◽  
T. C. Lu ◽  
L. F. Zhuo ◽  
W. L. Wang ◽  
M. H. Liang ◽  
...  

2012 ◽  
Vol 524 ◽  
pp. 166-172 ◽  
Author(s):  
S. Fairchild ◽  
M. Cahay ◽  
P.T. Murray ◽  
L. Grazulis ◽  
X. Wu ◽  
...  

2000 ◽  
Vol 617 ◽  
Author(s):  
J. Narayan ◽  
A.K. Sharma ◽  
A. Kvit ◽  
D. Kumar ◽  
J.F. Muth

AbstractWe have developed a novel method based upon pulsed laser deposition to produce nanocrystalline metal, semiconductor and magnetic material thin films and composites. The size of nanocrystals was controlled by interfacial energy, number of monolayers and substrate temperature. By incorporating a few monolayers of W during PLD, the grain size of copper nanocrystals was reduced from 160nm (Cu on Si (100)) to 4nm for a multilayer (Cu/W/Cu/W/Si (100)) thin film. The hardness increased with decreasing grain size up to a certain value (7nm in the case of copper) and then decreased below this value. While the former is consistent with Hall-Petch model, the latter involves a new model based upon grain boundary sliding.We have used the same PLD approach to form nanocrystalline metal (Ni, Co, Fe embedded in α-A12O3 and MgO) and semiconductor (Si, Ge, ZnO, GaN embedded in AIN and α-A12O3) thin films. These nanocrystalline composites exhibit novel magnetic properties and novel optoelectronic properties with quantum confinement of electrons, holes and excitons in semiconductors. We review advanced PLD processing, detailed characterization, structureproperty correlations and potential applications of these materials.


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