Investigation of electrical characteristics of different ceramic samples using Hall effect measurement

Hall effect is a very popular technique and is widely used to quantify important electrical parameters such as carrier concentration, resistivity, mobility and Hall coefficient of different types of samples. In this paper, electrical characteristics of three ceramic samples will be analyzed using a Hall effect measurement system (Ecopia, HMS-3000), which is based on the van der Pauw method. Measured results for mobility and electrical resistivity at three temperatures (25?C, 50?C and 80?C) will be presented. Current-voltage and current-resistance dependence between terminals of four point contact of different samples will be also demonstrated.

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Comment on ’’Generalized Hall‐effect measurement geometries and limitations of van der Pauw‐type Hall‐effect measurements’’

Journal of Applied Physics ◽

10.1063/1.329888 ◽

1982 ◽

Vol 53 (7) ◽

pp. 5350-5351 ◽

Cited By ~ 5

Author(s):

W. A. Beck

Keyword(s):

Hall Effect ◽

Hall Effect Measurement ◽

Effect Measurement ◽

Hall Effect Measurements ◽

Van Der Pauw

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Electrical Properties of Pt/Nb-Doped SrTiO3 Schottky Junctions

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.421-422.463 ◽

2009 ◽

Vol 421-422 ◽

pp. 463-466 ◽

Cited By ~ 1

Author(s):

Jian Yong Li ◽

Takeshi Ohgaki ◽

Ryota Matsuoka ◽

Hideyo Okushi ◽

Naoki Ohashi

Keyword(s):

Electrical Properties ◽

Hall Effect ◽

Hall Effect Measurement ◽

Effect Measurement ◽

High Concentration ◽

Current Voltage ◽

Capacitance Voltage ◽

Schottky Junctions ◽

Lower Temperature ◽

The Ideal

In this study, we successfully fabricated the Schottky junctions consisting of Pt electrode and high concentration Nb-doped (0.5 wt%) SrTiO3 (001) single crystal by sputtering process. The carrier concentrations of Nb-0.5wt%-doped SrTiO3 were determined as 1020 /cm3 order by Hall effect measurement. The electrical properties of junctions were investigated by measuring their current-voltage (I-V), capacitance-voltage (C-V) characteristics at temperature range from 80K to 400K. The hysteresis feature was observed that indicating the alteration of barrier height in junctions especially at lower temperature. The donor concentration and built-in potentials calculated from C-2-V data showed large discrepancy from Hall effect measurement indicating that the junctions deviate from the ideal Schottky diode model.

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Theory and Realization of a Two-Layer Hall Effect Measurement Concept for Characterization of Epitaxial and Implanted Layers of SiC

MRS Proceedings ◽

10.1557/proc-423-661 ◽

1996 ◽

Vol 423 ◽

Cited By ~ 7

Author(s):

Adolf Schöner ◽

Kurt Rottner ◽

Nils Nordell

Keyword(s):

Hall Effect ◽

Hall Effect Measurement ◽

Thin Layers ◽

Electrical Insulation ◽

Effect Measurement ◽

Pn Junction ◽

Hall Effect Measurements ◽

Measurement Concept ◽

Van Der Pauw ◽

Cv Measurements

AbstractEpitaxial and implanted layers are generally characterized by Hall effect measurements using a pn-junction as electrical insulation of the layer from the substrate. Due to defects, low doping concentrations or thin layers the resistivity of epitaxial or implanted layers is comparable to the resistivity of the pn-junction and the substrate. This results in inefficient electrical insulation between both regions. To be able to determine the properties of epitaxial or implanted layers even in the case of substantial leakage current we developed a two-layer Hall effect measurement concept. This concept is based on the conventional van der Pauw technique applied to the layer and the substrate separately. In addition the current-voltage characteristic of the pn-junction is measured and modeled in the analysis as an ohmic resistor.This two-layer concept is applied to epitaxial grown SiC and the results are compared with conventional van der Pauw technique. In addition both techniques are compared with the results of capacitance-voltage (CV) measurements and secondary ion mass spectroscopy (SIMS).

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