Electrical Properties of Pt/Nb-Doped SrTiO3 Schottky Junctions

In this study, we successfully fabricated the Schottky junctions consisting of Pt electrode and high concentration Nb-doped (0.5 wt%) SrTiO3 (001) single crystal by sputtering process. The carrier concentrations of Nb-0.5wt%-doped SrTiO3 were determined as 1020 /cm3 order by Hall effect measurement. The electrical properties of junctions were investigated by measuring their current-voltage (I-V), capacitance-voltage (C-V) characteristics at temperature range from 80K to 400K. The hysteresis feature was observed that indicating the alteration of barrier height in junctions especially at lower temperature. The donor concentration and built-in potentials calculated from C-2-V data showed large discrepancy from Hall effect measurement indicating that the junctions deviate from the ideal Schottky diode model.

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Evaluations of Electrical Properties for ZnTe Thin Films Electrodeposited from a Citric Acid Bath with a Hall Effect Measurement

Journal of the Japan Institute of Metals and Materials ◽

10.2320/jinstmet.69.298 ◽

2005 ◽

Vol 69 (3) ◽

pp. 298-302

Author(s):

Takeshi Ohtomo ◽

Takahiro Ishizaki ◽

Daisuke Ogiwara ◽

Hiroshi Kawarada ◽

Akio Fuwa

Keyword(s):

Thin Films ◽

Citric Acid ◽

Electrical Properties ◽

Hall Effect ◽

Hall Effect Measurement ◽

Effect Measurement ◽

Acid Bath ◽

Znte Thin Films

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Regulation of Substrate-Target Distance on the Microstructural, Optical and Electrical Properties of CdTe Films by Magnetron Sputtering

Materials ◽

10.3390/ma11122496 ◽

2018 ◽

Vol 11 (12) ◽

pp. 2496 ◽

Cited By ~ 1

Author(s):

Peng Gu ◽

Xinghua Zhu ◽

Haihua Wu ◽

Dingyu Yang

Keyword(s):

Electrical Properties ◽

Magnetron Sputtering ◽

Hall Effect ◽

Measurement System ◽

Hall Effect Measurement ◽

Target Distance ◽

Effect Measurement ◽

Average Grain Size ◽

Hall Effect Measurement System ◽

Cdte Films

Cadmium telluride (CdTe) films were deposited on glass substrates by direct current (DC) magnetron sputtering, and the effect of substrate-target distance (Dts) on properties of the CdTe films was investigated by observations of X-ray diffraction (XRD) patterns, atomic force microscopy (AFM), UV-VIS spectra, optical microscopy, and the Hall-effect measurement system. XRD analysis indicated that all samples exhibited a preferred orientation along the (111) plane, corresponding to the zinc blende structure, and films prepared using Dts of 4 cm demonstrated better crystallinity than the others. AFM studies revealed that surface morphologies of the CdTe films were strongly dependent on Dts, and revealed a large average grain size of 35.25 nm and a high root mean square (RMS) roughness value of 9.66 nm for films fabricated using Dts of 4 cm. UV-VIS spectra suggested the energy band gap (Eg) initially decreased from 1.5 to 1.45 eV, then increased to 1.68 eV as Dts increased from 3.5 to 5 cm. The Hall-effect measurement system revealed that CdTe films prepared with a Dts of 4 cm exhibited optimal electrical properties, and the resistivity, carrier mobility, and carrier concentration were determined to be 2.3 × 105 Ω∙cm, 6.41 cm2∙V−1∙S−1, and 4.22 × 1012 cm−3, respectively.

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Optical and Electrical Properties of P-Type N-Doped ZnO Film

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.609-610.113 ◽

2014 ◽

Vol 609-610 ◽

pp. 113-117

Author(s):

Ya Juan Sun ◽

Wan Xing Wang

Keyword(s):

Electrical Properties ◽

Hall Effect ◽

Band Gap ◽

Hall Effect Measurement ◽

Effect Measurement ◽

Zno Films ◽

Optical And Electrical Properties ◽

High Quality ◽

Doped Zno ◽

P Type

Since ZnO is a wide band gap (3.37 eV) semiconductor with a large exitonic binding energy (60 meV), it has been considered as a candidate for various applications, such as ultraviolet (UV) light emitting diodes and laser diodes. For the applications of ZnO-based optoelectronic devices, it is necessary to produce n and p type ZnO films with the high quality. Since ZnO is naturally n-type semiconductor material due to intrinsic defects, such as oxygen vacancies, zinc interstitials, etc., it is easy to produce n-type ZnO with high quality. However, it is difficult to produce low-resistive and stable p-type ZnO due to its asymmetric doping limitations and the self-compensation effects of the intrinsic defects. According to the theoretical studies, p-type ZnO can be realized using group-V dopants substituting for O, such as N, P and As. Among them, N has been suggested to be an effective acceptor dopant candidate to achieve p-type ZnO, because that nitrogen has a much smaller ionic size than P and As and the energy level of substitutional NOis lower than that of substitutional POand AsO.Transparent p-type ZnO: N thin films have been fabricated using the pulsed laser deposition method at deposition temperatures 800 °C under the O2and N2mixing pressure 6Pa. N-doped ZnO films were deposited on sapphire substrate using metallic zinc (99.999%) as target. The structural, optical and electrical properties of the films were examined by XRD, UV-visit spectra and Hall effect measurement. We found that thin film contain the hexagonal ZnO structure. The Hall effect measurement revealed that the carrier concentration is 5.84×10181/ cm3, and Hall mobility is 0.26 cm2/Vs, electrical resistivity is 4.12ohm-cm. Film thickness is 180nm. Besides, Visible light transmittance is more than 80%, and calculative band-gap is 3.1 eV, which is lower than ZnO.

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Investigation of electrical characteristics of different ceramic samples using Hall effect measurement

Processing and Application of Ceramics ◽

10.2298/pac0801033d ◽

2008 ◽

Vol 2 (1) ◽

pp. 33-37 ◽

Cited By ~ 1

Author(s):

Radomir Dzakula ◽

Slavica Savic ◽

Goran Stojanovic

Keyword(s):

Hall Effect ◽

Point Contact ◽

Hall Effect Measurement ◽

Effect Measurement ◽

Electrical Characteristics ◽

Ceramic Samples ◽

Current Voltage ◽

Different Types ◽

Van Der Pauw ◽

C 50

Hall effect is a very popular technique and is widely used to quantify important electrical parameters such as carrier concentration, resistivity, mobility and Hall coefficient of different types of samples. In this paper, electrical characteristics of three ceramic samples will be analyzed using a Hall effect measurement system (Ecopia, HMS-3000), which is based on the van der Pauw method. Measured results for mobility and electrical resistivity at three temperatures (25?C, 50?C and 80?C) will be presented. Current-voltage and current-resistance dependence between terminals of four point contact of different samples will be also demonstrated.

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Microwave Hall effect measurement for materials in the skin depth region

Journal of Applied Physics ◽

10.1063/5.0033777 ◽

2021 ◽

Vol 129 (1) ◽

pp. 015102

Author(s):

Ryo Ogawa ◽

Tatsunori Okada ◽

Hideyuki Takahashi ◽

Fuyuki Nabeshima ◽

Atsutaka Maeda

Keyword(s):

Hall Effect ◽

Hall Effect Measurement ◽

Skin Depth ◽

Effect Measurement

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Electrical Measurement of Recombination Lifetime in Blue Light Emitting Diodes

MRS Proceedings ◽

10.1557/proc-829-b2.11 ◽

2004 ◽

Vol 829 ◽

Cited By ~ 1

Author(s):

M. A. Awaah ◽

R. Nana ◽

K. Das

Keyword(s):

Blue Light ◽

Light Emitting Diodes ◽

Deep Level ◽

Electrical Measurement ◽

High Concentration ◽

Recombination Lifetime ◽

Light Emitting ◽

Radiative Processes ◽

Current Voltage ◽

Capacitance Voltage

ABSTRACTA recombination lifetime of approximately 25 ns was extracted from measured reverse recovery storage times in AlGaN/GaN/AlGaN double heterojunction blue light emitting diodes. This experimentally determined lifetime is expected to arise from a combination of radiative and non-radiative processes occurring in the diodes. The non-radiative processes are likely to be due the presence of a high concentration deep-states as identified from the current-voltage and capacitance-voltage measurements. Current-voltage characteristics of these diodes were highly non-ideal as indicated by high values of the ideality factor ranging from 3.0 – 7.0. Logarithmic plots of the forward characteristics indicated a space-charge-limited-current (SCLC) conduction in presence of a high density of “deep-level states” in the active region of the diodes. An analysis of these characteristics yielded an approximate density of these deep-level states as 2 × 1017/cm3. The density of deep-states extracted from capacitance-voltage measurements were in good agreement with that obtained from current-voltage measurements.

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