scholarly journals The effect of temperature on structural changes of NI55CO45 amorphous powder

2004 ◽  
Vol 36 (2) ◽  
pp. 105-112 ◽  
Author(s):  
M. Spasojevic ◽  
Aleksa Maricic ◽  
Lidija Rafailovic
Keyword(s):  
Current Density ◽  
Electrical Resistance ◽  
Structural Changes ◽  
Crystallization Process ◽  
Amorphous Powder ◽  
Solution Temperature ◽  
Specific Chemical ◽  
A Current ◽  
Shape And Size ◽  
Cobalt And Nickel

Cobalt and nickel alloy powders were obtained by electrochemical deposition on a titanium cathode from an ammonium solution of cobalt and nickel sulfate. Powders of a specific chemical structure and composition, particle shape and size were obtained by an appropriate choice of electrolysis parameters, current density, deposit growth rate and solution temperature and composition. Within the current density range of 5 - 450 mAcm-2, the current density did not significantly affect the chemical composition of the powders, but had a significant effect on the particle structure, shape and size. Crystal particles formed at a current density lower than 30 mAcm-2. Amorphous powders were obtained at a current density higher than 50 mAcm-2. Structural changes of the obtained amorphous powder of 55mol.% Ni, 45 mol.% Co, pressed under the pressure of 100 MPa, were investigated by measuring the temperature dependence of electrical resistance in isothermal and non-isothermal conditions varying from room temperature to 750?C. The process of thermal stabilization of defects that appeared during pressing occurred within the temperature range of 200-390?C. The DSC method was used to determine that the powder crystallization process occurred in two stages with peak temperatures of the exothermal maximum in the first and second stage of T1 = 438?C and T2 = 573?C, respectively. A distinct correlation between the change of electrical resistance and the crystallization process was established. The reduction of electrical resistively occurs during each crystallization stage.

scholarly journals The correlation of processes of crystallization and changes of free electron density amorphous alloy powder Co80Ni20

2005 ◽  
Vol 2 (1) ◽  
pp. 57-62
Author(s):  
Aleksa Maricic ◽  
Momcilo Ristic
Keyword(s):  
Alloy Powder ◽  
Room Temperature ◽  
Structural Changes ◽  
Crystallization Process ◽  
Free Electron Density ◽  
X Ray ◽  
Powder Samples ◽  
Amorphous Alloy Powder ◽  
Dsc Method ◽  
Cobalt And Nickel

Great attention is being given today to investigations on the capabilities and structural changes of amorphous and nanocrystal materials. Structural changes of the amorphous cobalt and nickel alloy powder obtained by electrochemical deposition were investigated in this paper. The crystallization process, as determined by the DSC method, occurred in two steps. The temperature dependence of electrical resistively and magnetic susceptibility in isothermal and non-isothermal conditions within the temperature range of room temperature to 700?C was determined for the powder samples pressed under pressure of 800 MPa. The X-ray structural examinations results correlate with those of the DSC analysis and the electrical resistively measuring.

scholarly journals The phase structure and morphology of electrodeposited nickel-cobalt alloy powders

2011 ◽  
Vol 43 (3) ◽  
pp. 313-326 ◽  
Author(s):  
M. Spasojevic ◽  
L. Ribic-Zelenovic ◽  
A. Maricic
Keyword(s):  
Current Density ◽  
Amorphous Powder ◽  
Nanocrystalline Powders ◽  
Content Increase ◽  
Nickel Powders ◽  
Electrodeposited Nickel ◽  
Current Densities ◽  
Two Phases ◽  
A Current ◽  
Deposition Current Density

Cobalt and nickel powders of three different compositions: Ni0.8Co0.2, Ni0.55Co0.45 and Ni0.2Co0.8 were obtained by electrodeposition from an ammonium chloride-sulphate solution. It was shown that the microstructure and morphology of the powders depended on the deposition current density as well as on the bath composition. Amorphous powder of Ni0.8Co0.2 was obtained at the current density higher than 200 mA cm-2, but nanocrystalline powders having the same composition were obtained at current densities lower than 200 mAcm-2. The nanocrystalline powders with lower Ni contents (0.55 and 0.2) obtained at a current density ranging from 40 mA cm-2 to 450 mA cm-2 were solid solutions of two phases, FCC (?-Ni) and HCP (?-Co) ones. The increase of the HCP phase in the powder was a result of both the Co content increase in the powder and decrease of the deposition current density.

A transition metal oxofluoride offering advantages in electrocatalysis and potential use in applications

2016 ◽  
Vol 188 ◽  
pp. 481-498 ◽  
Author(s):  
H. Svengren ◽  
N. Torapava ◽  
I. Athanassiadis ◽  
S. I. Ali ◽  
M. Johnsson
Keyword(s):  
Current Density ◽  
Water Oxidation ◽  
Hydrophobic Surface ◽  
Surface Sites ◽  
Faradaic Current ◽  
Crystallite Surface ◽  
Potential Use ◽  
A Current ◽  
Shape And Size

The recently described solid solution (Co,Ni,Mn)3Sb4O6F6has proved stable and efficient as a catalyst for electrocatalytic water oxidation. The end component Co3Sb4O6F6was found to be most efficient, maintaining a current density ofj= 10 mA cm−2at an overpotential of 443 mV with good capability. At this current density, O2and H2were produced in the ratio 1 : 2 without loss of faradaic current against a Pt-cathode. A morphological change in the crystallite surface was observed after 0.5 h, however, even after 64.5 h, the overall shape and size of the small crystallites were unaffected and the electrolyte contained only 0.02 at% Co. It was also possible to conclude fromin situEXAFS measurements that the coordination around Co did not change. The oxofluorides express both hydrophilic and hydrophobic surface sites, incorporate a flexible metalloid element and offer the possibility of a mechanism that differs from other inorganic catalytic pathways previously described.

Electrical Resistance and Structural Changes on Crystallizaiton Process of Amorphous Ge-Te Thin Films

2009 ◽  
Vol 1160 ◽  
Author(s):  
Yuta Saito ◽  
Yuji Sutou ◽  
Junichi Koike
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Electrical Resistance ◽  
Structural Changes ◽  
Crystallization Process ◽  
Optical Disk ◽  
Resistance Change ◽  
X Ray ◽  
Change Material

AbstractGeTe-Sb2Te3 pseudobinary compounds are attracting considerable attention as phase change materials for optical disk and phase change random access memory (PRAM). In these compounds, Ge2Sb2Te5 (GST) has been used for an optical disk memory such as DVD-RAM because the crystallization by laser beam heating is very fast (∼20ns). Recently, the GST has been much considered as material for PRAM and, therefore, the electrical resistance change due to crystallization and the phase change by applying an electrical current have been widely investigated. On the other hand, although GeTe compound has been suggested as the phase change material for the optical disk by Chen et al in 1986, the study focusing on the phase change material for PRAM is limited. Since GeTe is known to show the phenomenon of electrical switching, this compound has a potential of PRAM. In this study, the electrical resistance and crystalline structural changes on crystallization process in Ge-Te thin films were investigated.Films of amorphous Ge100–xTex (x : 46-94) with 200 nm thickness were deposited by sputtering of GeTe alloy target or co-sputtering of GeTe and Te targets on SiO2/Si substrates. In-situ electrical resistance measurements during heating process of these films were performed by two point probe method in a heating rate of 2∼50°C/min. X-ray diffraction (XRD) analysis was employed for the structural identification of thin films for 10-60° in 2′ using X-ray diffractometer with Cu-K. Transmission electron microscope (TEM) analysis was carried out to investigate the microstructure and to identify crystalline structure. The compositions of these films were confirmed by energy dispersive X-ray spectroscopy (EDS) attached TEM.All as-deposited Ge-Te films were confirmed amorphous by XRD and TEM. From the in-situ electrical resistance measurements, it is found that resistance change with crystallization process depends on the composition and the stoichiometric GeTe compound shows abrupt electrical resistance change at around 190 °C. The crystallization temperature of GeTe was higher than that of GST and resistance difference between the amorphous and the crystal was also larger. While the electrical resistance of GST film gradually decreased with increasing temperature after the crystallization at around 160 °C, that of GeTe film showed small temperature dependence after crystallization. It was found by X-ray measurement observation that the amorphous GeTe compound film crystallized first into a cubic state, and then into a stable rhombohedral state by further heating. The crystallization kinetics of Ge-Te thin films will be also presented.

Electronic Properties Carbon Film Using Chemical Process

2007 ◽  
Vol 124-126 ◽  
pp. 251-254
Author(s):  
Sang Heon Lee
Keyword(s):  
Current Density ◽  
Electrical Resistance ◽  
Chemical Process ◽  
Smooth Surface ◽  
Carbon Film ◽  
Carbon Films ◽  
Methanol Solution ◽  
Solution Temperature ◽  
Electrode Spacing ◽  
Electro Deposition

Electro-deposition of carbon film on silicon substrate in methanol solution was carried out with various current density, solution temperature and electrode spacing between anode and cathode. The carbon films with smooth surface morphology and high electrical resistance were formed when the distance between electrode was relatively wider. The electrical resistance of the carbon films were independent of both current density and solution temperature.

scholarly journals Correlation between the crystallization process and change in electron density of states in amorphous powder of the Ni80Co20 alloy

2006 ◽  
Vol 38 (2) ◽  
pp. 139-144 ◽  
Author(s):  
S. Randjic ◽  
A. Maricic ◽  
L. Rafailovic ◽  
M. Spasojevic ◽  
M.M. Ristic
Keyword(s):  
Electron Density ◽  
Density Of States ◽  
Electrical Resistance ◽  
Crystallization Process ◽  
Amorphous Powder ◽  
Specific Electrical Resistance ◽  
Scanning Calorimetry ◽  
Electron Density Of States ◽  
Before And After ◽  
Crystallization Stage

The method of differential scanning calorimetry (DSC) was employed to examine the crystallization process of amorphous powder of the Ni80Co20 alloy in the temperature interval from room temperature to 1000K. It is shown that the crystallization process of this alloy's powder proceeds in two stages at temperatures T1=690K and T2=790K. The relative changes in the electron density of states in the vicinity of Fermi level were determined from the changes in the slope of the thermo-electromotive force (TEMF) temperature coefficient before and after each stage of crystallization process. The obtained results show that the relative change in the electron density of states is 34.9% after the first crystallization stage and 38.9% after the second one. The changes in the specific electrical resistance of the pressed powder as a function of temperature are fully correlated with the change in the electron density of states and results of the DSC method. The observed rapid decrease in the specific electrical resistance after each crystallization stage is caused by the increase of the mean free electron path and increase in the electron density of states.

Facet Topography and Dislocation Structure as a Possible Source for Electrical Heterogeneity in [001] TILT Bicrystals of YBa2Cu3O7-δ

1996 ◽  
Vol 54 ◽  
pp. 338-339
Author(s):  
I-Fei Tsu ◽  
D.L. Kaiser ◽  
S.E. Babcock
Keyword(s):  
Grain Boundary ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Electromagnetic Properties ◽  
Length Scale ◽  
Density Values ◽  
Current Densities ◽  
Applied Fields ◽  
A Current

A current theme in the study of the critical current density behavior of YBa2Cu3O7-δ (YBCO) grain boundaries is that their electromagnetic properties are heterogeneous on various length scales ranging from 10s of microns to ˜ 1 Å. Recently, combined electromagnetic and TEM studies on four flux-grown bicrystals have demonstrated a direct correlation between the length scale of the boundaries’ saw-tooth facet configurations and the apparent length scale of the electrical heterogeneity. In that work, enhanced critical current densities are observed at applied fields where the facet period is commensurate with the spacing of the Abrikosov flux vortices which must be pinned if higher critical current density values are recorded. To understand the microstructural origin of the flux pinning, the grain boundary topography and grain boundary dislocation (GBD) network structure of [001] tilt YBCO bicrystals were studied by TEM and HRTEM.

A highly stable CoMo2S4/Ni3S2 heterojunction electrocatalyst for efficient hydrogen evolution

2021 ◽  
Author(s):  
Minmin Wang ◽  
Mengke Zhang ◽  
Wenwu Song ◽  
Weiting Zhong ◽  
Xunyue Wang ◽  
...  
Keyword(s):  
Hydrogen Evolution ◽  
Current Density ◽  
A Current

A CoMo2S4/Ni3S2 heterojunction is prepared with an overpotential of only 51 mV to drive a current density of 10 mA cm−2 in 1 M KOH solution and ∼100% of the potential remains in the ∼50 h chronopotentiometric curve at 10 mA cm−2.

Formation of Barrier Oxide Film on Lead in Borate Solutions

1994 ◽  
Vol 59 (6) ◽  
pp. 1305-1310 ◽  
Author(s):  
Emad E. Abdel Aal ◽  
Mohamed M. Hefny
Keyword(s):  
Oxide Film ◽  
Current Density ◽  
High Field ◽  
Empirical Relation ◽  
Field Approximation ◽  
Ion Concentration ◽  
Solution Temperature ◽  
Oxide Growth ◽  
Rate Of Growth ◽  
Barrier Type

Galvanostatic anodization of lead in borate solutions reveals that lead can form a barrier type oxide film. The rate of growth, R, fulfils the empirical relation, R = aib within the current density i range from 1.16 .10-4 to 3.19 .10-4 A cm-2. The magnitudes of the parameters a and b are 6.9 . 103 and 1.6, respectively, it has been found that the high field approximation is applicable for the oxide growth on lead. The coefficients of the dependence of R on solution temperature, T, pH and borate ion concentration, c, viz. (∂R/∂T), (∂R/∂pH) and (∂R/∂log c) are -18 . 10-4, -0.13 and 0.41, respectively.

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