Optical, Electrical Properties and Structure of Multilayer Iron-Doped Indium–Tin Oxide Thin Films Sputtered on Preheated Glass Substrates

2021 ◽  
Author(s):  
Makoto Ohtsuka ◽  
Ruslan Sergiienko ◽  
Svitlana Petrovska ◽  
Takashi Nakamura
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Thin Films ◽  
Glass Substrates ◽  
Iron Doped

Evolution of Atomically Stepped Surface of Indium Tin Oxide Thin Films Grown on Nanoimprinted Glass Substrates

2011 ◽  
Vol 4 (3) ◽  
pp. 035201 ◽  
Author(s):  
Yasuyuki Akita ◽  
Yumiko Miyake ◽  
Hirokazu Nakai ◽  
Hideo Oi ◽  
Masahiro Mita ◽  
...  
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Thin Films ◽  
Glass Substrates ◽  
Stepped Surface

scholarly journals The Effect of Deposition Rate on the Electrical Properties of Indium Tin Oxide (ITO) Thin Films

2015 ◽  
Vol 16 (2) ◽  
pp. 286
Author(s):  
Hadaate Ullah ◽  
Shahin Mahmud ◽  
Fahmida Sharmin Jui
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Deposition Rate ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Vital Role ◽  
Light Emitting ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Ito Thin Films

<p>Indium-tin oxide (ITO) which is optically transparent is referred as a “universal” electrode for various optoelectronic devices such as organic light emitting diodes (OLEDs). It is scientifically proved that the performance of OLEDs raises up significantly by exposing the ITO surface to oxygen plasma. This study employs conducting atomic force microscopy (C-AFM) for unique nanometer-scale mapping of the local current density of a vapor-deposited ITO film. Indium Tin Oxide (ITO) thin films have been prepared by using the reactive evaporation method on glass substrates in an oxygen atmosphere. It is found that the deposition rate plays a vital role in controlling the electrical properties of the ITO thin films. The resistivity and the electrical conductivity were also investigated. The electrical resistivity of 3.10 x10 <sup>–6</sup> Ωm has been obtained with a deposition rate of 2 nm/min.</p>

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