scholarly journals The Effect of Deposition Rate on the Electrical Properties of Indium Tin Oxide (ITO) Thin Films

2015 ◽  
Vol 16 (2) ◽  
pp. 286
Author(s):  
Hadaate Ullah ◽  
Shahin Mahmud ◽  
Fahmida Sharmin Jui
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Deposition Rate ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Vital Role ◽  
Light Emitting ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Ito Thin Films

<p>Indium-tin oxide (ITO) which is optically transparent is referred as a “universal” electrode for various optoelectronic devices such as organic light emitting diodes (OLEDs). It is scientifically proved that the performance of OLEDs raises up significantly by exposing the ITO surface to oxygen plasma. This study employs conducting atomic force microscopy (C-AFM) for unique nanometer-scale mapping of the local current density of a vapor-deposited ITO film. Indium Tin Oxide (ITO) thin films have been prepared by using the reactive evaporation method on glass substrates in an oxygen atmosphere. It is found that the deposition rate plays a vital role in controlling the electrical properties of the ITO thin films. The resistivity and the electrical conductivity were also investigated. The electrical resistivity of 3.10 x10 <sup>–6</sup> Ωm has been obtained with a deposition rate of 2 nm/min.</p>

scholarly journals Effect of Oxygen Flow Rate on Properties of Aluminum-Doped Indium-Saving Indium Tin Oxide (ITO) Thin Films Sputtered on Preheated Glass Substrates

Metals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1604
Author(s):  
Svitlana Petrovska ◽  
Ruslan Sergiienko ◽  
Bogdan Ilkiv ◽  
Takashi Nakamura ◽  
Makoto Ohtsuka
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Visible Range ◽  
Oxide Content ◽  
Glass Substrates ◽  
Ito Thin Films

Amorphous aluminum-doped indium tin oxide (ITO) thin films with a reduced indium oxide content of 50 mass% were manufactured by co-sputtering of ITO and Al2O3 targets in a mixed argon–oxygen atmosphere onto glass substrates preheated at 523 K. The oxygen gas flow rate and heat treatment temperature effects on the electrical, optical and structural properties of the films were studied. Thin films were characterized by means of a four-point probe, ultraviolet–visible-infrared (UV–Vis-IR) spectroscopy and X-ray diffraction. Transmittance of films and crystallization temperature increased as a result of doping of the ITO thin films by aluminum. The increase in oxygen flow rate led to an increase in transmittance and hindering of the crystallization of the aluminum-doped indium saving ITO thin films. It has been found that the film sputtered under optimal conditions showed a volume resistivity of 713 µΩcm, mobility of 30.8 cm2/V·s, carrier concentration of 2.9 × 1020 cm−3 and transmittance of over 90% in the visible range.

scholarly journals Nanostructural Characterisation and Optical Properties of Sputter-Deposited Thick Indium Tin Oxide (ITO) Coatings

Coatings ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 1127
Author(s):  
Andrius Subacius ◽  
Bill Baloukas ◽  
Etienne Bousser ◽  
Steve J. Hinder ◽  
Mark A. Baker ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Nanocrystalline Structure ◽  
Optical Transmittance ◽  
Glass Substrates ◽  
Ito Thin Films ◽  
Sputter Deposited ◽  
Thick Coatings

Indium tin oxide (ITO) thin films, used in many optoelectronic applications, are typically grown to a thickness of a maximum of a few hundred nanometres. In this work, the composition, microstructure and optical/electrical properties of thick ITO coatings deposited by radio frequency magnetron sputtering from a ceramic ITO target in an Ar/O2 gas mixture (total O2 flow of 1%) on unheated glass substrates are reported for the first time. In contrast to the commonly observed (200) or (400) preferential orientations in ITO thin films, the approximately 3.3 μm thick coatings display a (622) preferential orientation. The ITO coatings exhibit a purely nanocrystalline structure and show good electrical and optical properties, such as an electrical resistivity of 1.3 × 10−1 Ω·cm, optical transmittance at 550 nm of ~60% and optical band gap of 2.9 eV. The initial results presented here are expected to provide useful information for future studies on the synthesis of high-quality thick ITO coatings.

Recoil Implantation of Ito thin Films on Glass Substrates

1983 ◽  
Vol 27 ◽  
Author(s):  
B. H. Rabin ◽  
B. B. Harbison ◽  
S. R. Shatynski
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Energy Deposition ◽  
Window Glass ◽  
Glass Substrates ◽  
Post Annealing ◽  
Ito Thin Films ◽  
Film Substrate

ABSTRACTIndium-Tin Oxide (ITO) heat mirror films implanted into window glass were obtained by post annealing of argon irradiated coatings of In-5w/o Sn produced by reactive evaporation in oxygen. Characterization of coatings has been carried out using TEM and AES. Optical properties have also been evaluated. The production of acceptable thin films requires low energy deposition rates during ion bombardment. This places a limit on the extent of film-substrate mixing, which is required if increased film lifetimes are to be realized.

Effect of Annealing on Electrical Properties of Indium Tin Oxide (ITO) Thin Films

2002 ◽  
Vol 2 (5) ◽  
pp. 570-573 ◽  
Author(s):  
M. Tariq Bhatti . ◽  
Anwar Manzoor Rana . ◽  
Abdul Fahem Khan . ◽  
M. Iqbal Ansari .
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ito Thin Films

Structural, optical and electrical properties of DC sputtered indium saving indium-tin oxide (ITO) thin films

Optik ◽  
2018 ◽  
Vol 156 ◽  
pp. 728-737 ◽  
Author(s):  
Leandro Voisin ◽  
Makoto Ohtsuka ◽  
Svitlana Petrovska ◽  
Ruslan Sergiienko ◽  
Takashi Nakamura
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Optical And Electrical Properties ◽  
Ito Thin Films

Effects of Annealing Temperature of Indium Tin Oxide Thin Films Prepared onto Glass by Sol-Gel Spin Coating Method

2011 ◽  
Vol 343-344 ◽  
pp. 116-123
Author(s):  
Yu Ming Peng ◽  
Yan Kuin Su ◽  
Cheng Jye Chu ◽  
Ru Yuan Yang ◽  
Ruei Ming Huang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Spin Coating ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Optical And Electrical Properties ◽  
Coating Method ◽  
Ito Thin Films

In this paper, the indium tin oxide (ITO) thin films were prepared by a sol-gel spin coating method and then annealed under different temperatures (400, 500 and 550°C) in a mixture atmosphere of 3.75% H2 with 96.25% N2 gases. The microstructure, optical and electrical properties of the prepared films were investigated and discussed. The XRD patterns of the ITO thin films indicated the main peak of the (222) plane and showed a high degree of crystallinity with an increase of the annealing temperature. In addition, due to the pores existing in the prepared films, the optical and electrical properties of the prepared films are degraded through the sol-gel process. Thus, the best transmittance of 70.0 %in the visible wavelength region and the lowest resistivity of about 1.1×10-2 Ω-cm were obtained when the prepared film was annealed at 550°C.

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