scholarly journals Synthesis of High-Quality α-Ga2O3 thin films on Sapphire Substrates with Introduction of Buffer Layers

2020 ◽  
Vol 69 (10) ◽  
pp. 707-711
Author(s):  
Kentaro KANEKO ◽  
Yoshito ITO ◽  
Shizuo FUJITA
Keyword(s):  
Thin Films ◽  
Buffer Layers ◽  
High Quality ◽  
Sapphire Substrates

Growth of corundum-structured In2O3 thin films on sapphire substrates with Fe2O3 buffer layers

2013 ◽  
Vol 364 ◽  
pp. 30-33 ◽  
Author(s):  
Norihiro Suzuki ◽  
Kentaro Kaneko ◽  
Shizuo Fujita
Keyword(s):  
Thin Films ◽  
Buffer Layers ◽  
Sapphire Substrates

MBE growth of high quality InAsSb thin films on GaAs substrates with GaSb as buffer layers

2020 ◽  
Vol 542 ◽  
pp. 125688
Author(s):  
Yong Li ◽  
Xiaoming Li ◽  
Ruiting Hao ◽  
Jie Guo ◽  
Yunpeng Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Buffer Layers ◽  
High Quality ◽  
Mbe Growth ◽  
Gaas Substrates

Investigation on Properties of β-Ga2O3 Solid Films with Zno Nano-Interlayer

2012 ◽  
Vol 629 ◽  
pp. 266-272
Author(s):  
De Min Kong ◽  
Ai Hua Liu ◽  
Bao Yuan Man ◽  
Mei Liu ◽  
Jin Jin Guo ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam ◽  
Lattice Structure ◽  
High Vacuum ◽  
Composite Films ◽  
High Quality ◽  
Nano Composite ◽  
Solid Films ◽  
Sapphire Substrates ◽  
Vacuum Atmosphere

High-quality β-Ga2O3 films andβ-Ga2O3 /ZnO/β-Ga2O3 nano composite thin films were fabricated on the sapphire substrates in the high vacuum atmosphere by laser molecular beam epitaxy (LMBE). The lattice structure and optical properties of these films were characterized.With the increase of the sputtering time of ZnO target ,Photoluminescence spectrums and Raman spectrums of the β-Ga2O3 /ZnO/β-Ga2O3 nano composite films were shifted regularly . When the ZnO target was sputtered 30min , the stronggest peak of Raman spectrum was appeared at 267nm . Besides,the composition ofβ-Ga2O3 /ZnO/β-Ga2O3 nano composite film was described .

Thermoelectric Properties of C-Axis-Oriented Ca3Co4O9+δ Films Grown on MgO-Buffered Si (100) by PLD Technique

2010 ◽  
Vol 29-32 ◽  
pp. 1913-1918
Author(s):  
Xia Zhang ◽  
Hong Chen ◽  
Qiu Hui Liao ◽  
Xia Li
Keyword(s):  
Thin Films ◽  
State Of The Art ◽  
Pulsed Laser ◽  
Buffer Layers ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Current State ◽  
Good Crystallinity

High-quality c-axis-oriented Ca3Co4O9+δ thin films have been grown directly on Si (100) wafers with inserting MgO buffer layers by pulsed-laser deposition (PLD). X-ray diffraction and scan electron microscopy show good crystallinity of the Ca3Co4O9+δ films. The resistivity and Seebeck coefficient of the Ca3Co4O9+δ thin films on Si (100) substrates are 9.8 mΩcm and 189 μV/K at the temperature of 500K, respectively, comparable to the single-crystal samples. This advance demonstrates the possibility of integrating the cobaltate-based high thermoelectric materials with the current state-of-the-art silicon technology for thermoelectricity-on-a-chip applications.

Synthesis of high quality graphene on capped (1 1 1) Cu thin films obtained by high temperature secondary grain growth on c -plane sapphire substrates

2D Materials ◽  
2018 ◽  
Vol 5 (3) ◽  
pp. 035008 ◽  
Author(s):  
Youngwoo Kim ◽  
Eric Moyen ◽  
Hemian Yi ◽  
José Avila ◽  
Chaoyu Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Grain Growth ◽  
High Quality ◽  
Sapphire Substrates

Structural and Electrical Properties of BiFeO3 Fabricated on C-Sapphire Substrates Using a Double SrTiO3/TiO2 Buffer Layer

2011 ◽  
Vol 687 ◽  
pp. 385-390
Author(s):  
Xiu Wei Liao ◽  
Jun Zhu ◽  
Wen Bo Luo ◽  
Lan Zhong Hao
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Remanent Polarization ◽  
Perovskite Phase ◽  
Buffer Layers ◽  
Electrical Performance ◽  
Electrical Measurements ◽  
Sapphire Substrates ◽  
Low Leakage ◽  
Low Leakage Current

BiFeO3 (BFO) thin films were deposited by pulsed laser deposition (PLD) on c-plane sapphire substrates with a double SrTiO3/TiO2 oxide buffer layer grown by laser molecular beam epitaxy (laser-MBE). X-ray diffraction data showed the highly (111)-oriented perovskite phase in the BFO films with SrTiO3/TiO2 buffer layers, compared to the polycrystalline thin film grown directly on sapphire substrates. The epitaxial BiFeO3 thin films inherit its orientation from the underlying SrTiO3 buffer layer and have two in-plane orientations: (111)[1-10] BiFeO3 // (0001)[1-100] Al2O3 plus a twin variant related by a 180° in-plane rotation. The BiFeO3 thin films with the buffer layer show an out-of-plane remanent polarization of 81.5μC/cm2, which is comparable to the remanent polarization of BiFeO3 prepared on other single crystal substrates. Electrical measurements demonstrate that the BiFeO3 thin films with the buffer layer exhibit excellent fatigue endurance and a low leakage current density relative to the films without the buffer layer. These results indicate that the (111)-oriented BiFeO3 films with favorable electrical performance could be epitaxially grown on sapphire substrates using the double SrTiO3/TiO2 buffer layer.

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