scholarly journals Germanium Gradient Optimization for High-Speed Silicon Germanium Hetero-Junction Bipolar Transistors

2019 ◽  
Vol 61 (1) ◽  
pp. 22-32
Author(s):  
Abdelkader Khadir ◽  
Nouredine Sengouga ◽  
Mohamed Kamel Abdelhafidi
Keyword(s):  
Energy Balance ◽  
Silicon Germanium ◽  
Computer Aided Design ◽  
High Speed ◽  
Bipolar Transistors ◽  
Current Gain ◽  
Balance Model ◽  
Drift Diffusion ◽  
Oscillation Frequencies ◽  
Aided Design

AbstractThe effect of germanium trapezoidal profile shape on the direct current (DC) current gain (βF), cut-off frequency (fT) and maximum oscillation frequency (fMAX) of silicon-germanium (SiGe) hetero-junction bipolar transistors (HBTs) has been investigated. The energy balance (EB), hydrodynamic (HD) and drift-diffusion (DD) physical transport models in SILVACO technology computer aided design (T-CAD) simulator were used. It was found that the current gain values using energy balance model are higher than hydrodynamic and much higher than those corresponding to drift-diffusion. Moreover, decreasing the germanium gradient slope towards the collector side of the base enhances the maximum oscillation frequencies using HD and EB models whilst, they remain stable for DD model.

scholarly journals Removal of Methylene Blue by Activated Glass Foams with TiO2 in Dark and Simulated Solar Light

2019 ◽  
Vol 61 (1) ◽  
pp. 33-43
Author(s):  
Florina Stefania Rus ◽  
Stefan Danica Novaconi ◽  
Paulina Vlazan ◽  
Madalina Ivanovici
Keyword(s):  
Energy Balance ◽  
Silicon Germanium ◽  
Computer Aided Design ◽  
Current Gain ◽  
Balance Model ◽  
Drift Diffusion ◽  
Simulated Solar Light ◽  
Oscillation Frequencies ◽  
Aided Design ◽  
Dc Current

AbstractThe effect of germanium trapezoidal profile shape on the direct current (DC) current gain (βF), cut-off frequency (fT) and maximum oscillation frequency (fMAX) of silicon-germanium (SiGe) hetero-junction bipolar transistors (HBTs) has been investigated. The energy balance (EB), hydrodynamic (HD) and drift-diffusion (DD) physical transport models in SILVACO technology computer aided design (T-CAD) simulator were used. It was found that the current gain values using energy balance model are higher than hydrodynamic and much higher than those corresponding to drift-diffusion. Moreover, decreasing the germanium gradient slope towards the collector side of the base enhances the maximum oscillation frequencies using HD and EB models whilst, they remain stable for DD model.

FUNDAMENTALS, PERFORMANCE AND RELIABILITY OF III-V COMPOUND SEMICONDUCTOR HETEROJUNCTION BIPOLAR TRANSISTORS

1995 ◽  
Vol 06 (01) ◽  
pp. 1-89 ◽  
Author(s):  
GUANG-BO GAO ◽  
S. NOOR MOHAMMAND ◽  
GREGORY A. MARTIN ◽  
HADIS MORKOÇ
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Compound Semiconductor ◽  
Bipolar Transistors ◽  
Current Gain ◽  
Processing Technologies ◽  
Recent Developments ◽  
Improved Performance ◽  
Oscillation Frequencies ◽  
Recorded Performances

Recent developments in the physics and technology of III-V compound heterojunction bipolar transistors (HBTs) are reviewed. The technologies discussed are AlGaAs/GaAs, GaInP/GaAs, InP/InGaAs, and AlInAs/InGaAs based heterostructures. WIth current gain cut off frequencies over 100 GHz and maximum oscillation frequencies of about 200 GHz, the III-V compound semiconductor based HBTs have advanced to the point of commercialization. These developments also had the fortuitous effect of providing impetus and theoretical base to advance Si based HBT technologies, such as SiGe HBTs, to advance also. Recent SiGe HBTs, taking advantage of advanced Si processing technologies, have also recorded performances in excess of 100 GHz with applications envisioned in high speed analog-digital converters. While there remain some voids in the fundamental understanding of HBTs, the state-of-the-art of the GaAs HBT technology, concerning reproducibility and reliability, is at a point where problems related to production are at the forefront. The next few years are going to prove interesting with each technology recording improved performance.

High Speed GaAs Based Devices on Si Substrates

1986 ◽  
Vol 67 ◽  
Author(s):  
Hadis Morkoc
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Bipolar Transistors ◽  
Annealing Process ◽  
Current Gain ◽  
Device Performance ◽  
Microwave Frequencies ◽  
Si Substrates ◽  
Cutoff Frequencies ◽  
Oscillation Frequencies

ABSTRACTRemarkably good device performance at both dc and microwave frequencies has recently been obtained from GaAs based devices grown on Si substrates. In GaAs MESFETs on Si, current gain cutoff frequencies and maximum oscillation frequencies of fT = 13.3 GHz and fmax = 30 GHz have been obtained for 1.2μm devices, which is nearly identical to the performance achieved in GaAs on GaAs technology for both direct implant and epitaxial technology. For heterojunction bipolar transistors, current gain cutoff frequencies and maximum oscillation frequencies of fT = 30 GHz and fmax = 11.3 GHz have been obtained for emitter dimensions of 4×20μm2. In GaAs AlGaAs MODFETs. current gain cut-off frequencies of about 15 GHz with lμm gates were obtained on GaAs and Si substrates. The pseudomorphic InGaAs/GaAs MODFETs were also fabricated and found to be comparable to GaAs MODFETs although they should perform better. The structures were also shown to maintain their properties when put through ion implantation and annealing process. Given the performance already demonstrated in GaAs on Si devices and the advantages afforded by this technology, the growth of III-Vs on Si promises to play an important role in the future of heterojunction electronics.

Supersolidus liquid phase sintering of high speed steels: Part 3: computer aided design of sinterable alloys

1999 ◽  
Vol 42 (2) ◽  
pp. 131-146 ◽  
Author(s):  
C.S. Wright ◽  
M. Youseffi ◽  
A.S. Wronski ◽  
I. Ansara ◽  
M. Durand-Charre ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Computer Aided Design ◽  
High Speed ◽  
Liquid Phase Sintering ◽  
Computer Aided ◽  
Aided Design

scholarly journals Development of Semi-Interface Motorcycle Simulator (SiMS)

2018 ◽  
Vol 7 (4.27) ◽  
pp. 148
Author(s):  
Wan Muhammad Syahmi Wan Fauzi ◽  
Abdul Rahman Omar ◽  
Helmi Rashid
Keyword(s):  
Finite Element Analysis ◽  
Finite Element ◽  
Real World ◽  
Computer Aided Design ◽  
High Speed ◽  
Controlled Environment ◽  
Element Analysis ◽  
Computer Aided ◽  
Niche Area ◽  
Aided Design

Recently, studies concerning motorcycle have been an overwhelming area of research interest. As an alternative to the real world assessment, researchers have utilized motorcycle simulator as a workstation to conduct studies in the motorcycle niche area. This paper deal with the development of a new motorcycle simulator named Semi-Interface Motorcycle Simulator (SiMS). Combination of Computer Aided Design (CAD) and Finite Element Analysis (FEA) software made it possible to design and simulates the motorcycle simulator’s conceptual design before being fabricated. The SiMS setup not only provides a near-to-real and immerse motorcycle riding experience on a super sport motorcycle model, but it also allows safer high speed motorcycle simulations to be conducted in a controlled environment that is portable and ergonomically easier to transport to various venues.  

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