Numerical study of deformations induced by ac electric field in insulating flexoelectric nematic layers

2011 ◽  
Vol 19 (1) ◽  
Author(s):  
G. Derfel ◽  
M. Buczkowska
Keyword(s):  
Liquid Crystals ◽  
Electric Field ◽  
Time Dependence ◽  
Critical Frequency ◽  
Numerical Study ◽  
Dielectric Anisotropy ◽  
Low Frequencies ◽  
High Frequencies ◽  
Ac Electric Field ◽  
Time Period

AbstractThe influence of the frequency f of applied ac electric field on the time dependence of electric field induced deformations of homeotropic nematic layers is studied numerically. Three kinds of nematic liquid crystals were considered: non-flexoelectric nematic with negative dielectric anisotropy, Δɛ < 0dielectrically compensated nematic (Δɛ = 0) possessing flexoelectric properties determined by the positive sum of flexoelectric coefficients e = e11 + e33 > 0nematic characterised by both Δɛ < 0 and e > 0.It was found that at sufficiently low frequencies, the deformations varied with time. The deformations of purely dielectric nature had the period 1/(2f). When the frequency was increased, a stationary director distribution was achieved, determined by the rms value of the ac voltage. The time period of purely flexoelectric distortions was equal to 1/f. There was a well defined cut-off frequency above which these deformations vanished. In the case of dielectrically anisotropic and flexoelectric nematic, the flexoelectric contribution vanished above a critical frequency and the deformation of dielectric nature stabilized at high frequencies.

scholarly journals Photoluminescence of CdSe/ZnS quantum dots in nematic liquid crystals in electric fields

2018 ◽  
Vol 9 ◽  
pp. 1544-1549 ◽  
Author(s):  
Margarita A Kurochkina ◽  
Elena A Konshina ◽  
Daria Khmelevskaia
Keyword(s):  
Quantum Dots ◽  
Liquid Crystals ◽  
Field Strength ◽  
Electric Field ◽  
Electric Field Strength ◽  
Electric Fields ◽  
Dielectric Anisotropy ◽  
Vertical Position ◽  
Decay Times ◽  
Pl Intensity

We have experimentally investigated the effect of the reorientation of a nematic liquid crystal (LC) in an electric field on the photoluminescence (PL) of CdSe/ZnS semiconductor quantum dots (QDs). To the LC with positive dielectric anisotropy, 1 wt % QDs with a core diameter of 5 nm was added. We compared the change of PL intensity and decay times of QDs in LC cells with initially planar or vertically orientated molecules, i.e., in active or passive LC matrices. The PL intensity of the QDs increases four-fold in the active LC matrix and only 1.6-fold in the passive LC matrix without reorientation of the LC molecules. With increasing electric field strength, the quenching of QDs luminescence occurred in the active LC matrix, while the PL intensity did not change in the passive LC matrix. The change in the decay time with increasing electric field strength was similar to the behavior of the PL intensity. The observed buildup in the QDs luminescence can be associated with the transfer of energy from LC molecules to QDs. In a confocal microscope, we observed the increase of particle size and the redistribution of particles in the active LC matrix with the change of the electric field strength. At the same time, no significant changes occurred in the passive LC matrix. With the reorientation of LC molecules from the planar in vertical position in the LC active matrix, quenching of QD luminescence and an increase of the ion current took place simultaneously. The obtained results are interesting for controlling the PL intensity of semiconductor QDs in liquid crystals by the application of electric fields.

Voltage-Induced Cholesteric Structure-Transformation in Thin Layers

1981 ◽  
Vol 36 (7) ◽  
pp. 718-726 ◽  
Author(s):  
Paul R. Gerber
Keyword(s):  
Liquid Crystals ◽  
Electric Field ◽  
Thin Layers ◽  
Dielectric Anisotropy ◽  
Structure Transformation ◽  
Cholesteric Liquid Crystals ◽  
Threshold Voltages

Abstract o lta g e -In d u c e d C h o le s te r ic S tr u c tu r e -T r a n s f o r m a tio n in T h i n L a y e rs Measurements of various threshold voltages which occur in thin layers of cholesteric liquid crystals with positive dielectric anisotropy under homeotropic wall-alignment conditions are presented. Characteristic times are determined for some of the structure-changing processes which take place under application of electric-field changes. The measurements have been performed for various pitch-to-thickness ratios, and are expressed in empirical formulae.

scholarly journals Installation for measuring the dielectric anisotropy of liquid crystals at low frequencies by the bridge method with constant displacement

2021 ◽  
Vol 1198 (1) ◽  
pp. 012006
Author(s):  
S V Kalashnikov ◽  
N A Romanov ◽  
A V Nomoev
Keyword(s):  
Liquid Crystal ◽  
Liquid Crystals ◽  
Internal Resistance ◽  
Dielectric Anisotropy ◽  
Dielectric Parameters ◽  
Low Frequencies ◽  
Offset Voltage ◽  
Wide Range ◽  
Ac Current ◽  
Constant Displacement

Abstract Installation designed to measure the dielectric anisotropy in laboratory studies of liquid crystal polymer films is described. The installation operates on the principle of a balanced alternating current (AC) bridge, allowing the application of a direct external current (bias) to the liquid crystal cell. The internal resistance of the direct current (DC) source, which affects the equilibrium condition of the bridge, is compensated. The frequency of the AC current feeding the bridge and the offset voltage of the cell is regulated within a wide range, which makes it possible to study various functional dependences of the dielectric parameters of liquid crystals and their modifiers.Introduction

Measurement of elastic constants of nematic liquid crystals with use of hybrid in-plane-switched cell

2012 ◽  
Vol 20 (3) ◽  
Author(s):  
E. Nowinowski-Kruszelnicki ◽  
J. Kędzierski ◽  
Z. Raszewski ◽  
L. Jaroszewicz ◽  
M. Kojdecki ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Liquid Crystals ◽  
Magnetic Fields ◽  
Electric Field ◽  
Elastic Constants ◽  
Nematic Liquid Crystals ◽  
Experimental Tests ◽  
New Method ◽  
Dielectric Anisotropy ◽  
Main Concept

AbstractA new method for quick and pretty accurate measurements of splay, twist and bend elastic constants of nematic liquid crystals is experimentally verified. The main concept relies on exploiting only the electric field and determining magnitudes of nematic elastic constants from threshold fields for Freedericksz transitions in only one hybrid in-plane-switched cell. In such cell the deformations of an investigated liquid crystal are controlled by three separated pairs of electrodes confining measurement domains. In two of them inter-digital electrodes are mounted on one cell cover. Splay, twist and bend elastic constants can be measured by a proper choice of electrodes’ configuration together with orienting cover coatings (without applying magnetic fields). In this paper, we describe layout of our cells and results of experimental tests by using different liquid crystals: 5CB and 6CHBT (with positive dielectric anisotropy), Demus’ esters (with negative dielectric anisotropy) and new liquid crystals mixtures produced in our university.

Magnetotelluric responses of three‐dimensional bodies in layered earths

Geophysics ◽  
1984 ◽  
Vol 49 (9) ◽  
pp. 1517-1533 ◽  
Author(s):  
Philip E. Wannamaker ◽  
Gerald W. Hohmann ◽  
Stanley H. Ward
Keyword(s):  
Electric Field ◽  
Apparent Resistivity ◽  
Three Dimensional ◽  
Wave Impedance ◽  
Transverse Magnetic ◽  
Small Scale ◽  
Low Frequencies ◽  
High Frequencies ◽  
Large Structures ◽  
The Earth

The electromagnetic fields scattered by a three‐dimensional (3-D) inhomogeneity in the earth are affected strongly by boundary charges. Boundary charges cause normalized electric field magnitudes, and thus tensor magnetotelluric (MT) apparent resistivities, to remain anomalous as frequency approaches zero. However, these E‐field distortions below certain frequencies are essentially in‐phase with the incident electric field. Moreover, normalized secondary magnetic field amplitudes over a body ultimately decline in proportion to the plane‐wave impedance of the layered host. It follows that tipper element magnitudes and all MT function phases become minimally affected at low frequencies by an inhomogeneity. Resistivity structure in nature is a collection of inhomogeneities of various scales, and the small structures in this collection can have MT responses as strong locally as those of the large structures. Hence, any telluric distortion in overlying small‐scale extraneous structure can be superimposed to arbitrarily low frequencies upon the apparent resistivities of buried targets. On the other hand, the MT responses of small and large bodies have frequency dependencies that are separated approximately as the square of the geometric scale factor distinguishing the different bodies. Therefore, tipper element magnitudes as well as the phases of all MT functions due to small‐scale extraneous structure will be limited to high frequencies, so that one may “see through” such structure with these functions to target responses occurring at lower frequencies. About a 3-D conductive body near the surface, interpretation using 1-D or 2-D TE modeling routines of the apparent resistivity and impedance phase identified as transverse electric (TE) can imply false low resistivities at depth. This is because these routines do not account for the effects of boundary charges. Furthermore, 3-D bodies in typical layered hosts, with layer resistivities that increase with depth in the upper several kilometers, are even less amenable to 2-D TE interpretation than are similar 3-D bodies in uniform half‐spaces. However, centrally located profiles across geometrically regular, elongate 3-D prisms may be modeled accurately with a 2-D transverse magnetic (TM) algorithm, which implicitly includes boundary charges in its formulation. In defining apparent resistivity and impedance phase for TM modeling of such bodies, we recommend a fixed coordinate system derived using tipper‐strike, calculated at the frequency for which tipper magnitude due to the inhomogeneity of interest is large relative to that due to any nearby extraneous structure.

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