scholarly journals Synchrotron radiation X-ray lithography for the fabrication of sub-quartermicron large-scale-integrated circuits.

1993 ◽  
Vol 6 (4) ◽  
pp. 445-456 ◽  
Author(s):  
KIMIYOSHI DEGUCHI
Keyword(s):  
Synchrotron Radiation ◽  
Integrated Circuits ◽  
Large Scale ◽  
X Ray

Investigation of Residual Stress/Strain and Texture in a Large Dissimilar Metal Weld Using Synchrotron Radiation and Neutrons

2013 ◽  
Vol 772 ◽  
pp. 193-199 ◽  
Author(s):  
Carsten Ohms ◽  
Rene V. Martins
Keyword(s):  
Synchrotron Radiation ◽  
Neutron Diffraction ◽  
Residual Stresses ◽  
Large Scale ◽  
High Energy ◽  
X Ray Diffraction ◽  
Butt Weld ◽  
X Ray ◽  
Component Size ◽  
Thin Slice

Bi-metallic piping welds are frequently used in light water nuclear reactors to connect ferritic steel pressure vessel nozzles to austenitic stainless steel primary cooling piping systems. An important aspect for the integrity of such welds is the presence of residual stresses. Measurement of these residual stresses presents a considerable challenge because of the component size and because of the material heterogeneity in the weld regions. The specimen investigated here was a thin slice cut from a full-scale bi-metallic piping weld mock-up. A similar mock-up had previously been investigated by neutron diffraction within a European research project called ADIMEW. However, at that time, due to the wall thickness of the pipe, stress and spatial resolution of the measurements were severely restricted. One aim of the present investigations by high energy synchrotron radiation and neutrons used on this thin slice was to determine whether such measurements would render a valid representation of the axial strains and stresses in the uncut large-scale structure. The advantage of the small specimen was, apart from the easier manipulation, the fact that measurement times facilitated a high density of measurements across large parts of the test piece in a reasonable time. Furthermore, the recording of complete diffraction patterns within the accessible diffraction angle range by synchrotron X-ray diffraction permitted mapping the texture variations. The strain and stress results obtained are presented and compared for the neutron and synchrotron X-ray diffraction measurements. A strong variation of the texture pole orientations is observed in the weld regions which could be attributed to individual weld torch passes. The effect of specimen rocking on the scatter of the diffraction data in the butt weld region is assessed during the neutron diffraction measurements.

Application of Synchrotron Radiation to Analysis of Both Contamination and Structure of Silicon Surfaces and Interfaces

1998 ◽  
Vol 4 (S2) ◽  
pp. 346-347
Author(s):  
P. Pianetta ◽  
S. Brennan
Keyword(s):  
Synchrotron Radiation ◽  
Integrated Circuits ◽  
Silicon Wafer ◽  
Silicon Surfaces ◽  
Wafer Surface ◽  
X Ray ◽  
Enhanced Diffusion ◽  
Surfaces And Interfaces ◽  
X Ray Scattering ◽  
Wafer Surfaces

Synchrotron Radiation has become an important tool for the analysis of silicon surfaces in both fundamental and applied problems with techniques ranging from x-ray scattering to fluorescence. Applications that have been studied include the analysis of ultra-low levels of impurities on silicon wafer surfaces using the total external x-ray fluorescence technique (TXRF), measurement of silicon wafer surface roughness using crystal truncation rod scattering, measurement of the stress and defects associated with isolation trenches used in the fabrication of integrated circuits, and the study of transient enhanced diffusion in implanted silicon using x-ray diffuse scattering.As the dimensions of integrated circuits become smaller and smaller, the thickness of the gate oxide is being reduced to a level where it has become necessary to control the process to virtually atomic levels. With oxide thicknesses less than 100 Angstroms, surface impurities can have deleterious affects on the oxide properties.

Some applications of electron beam microanalysis techniques in VLSI process evaluation

1983 ◽  
Vol 41 ◽  
pp. 160-161
Author(s):  
Simon Thomas
Keyword(s):  
Integrated Circuits ◽  
Process Evaluation ◽  
Large Scale ◽  
Technology Development ◽  
Analytical Techniques ◽  
Successful Implementation ◽  
Analysis Of Failures ◽  
Characterization Of Materials ◽  
Circuits Vlsi

Trends in the technology development of very large scale integrated circuits (VLSI) have been in the direction of higher density of components with smaller dimensions. The scaling down of device dimensions has been not only laterally but also in depth. Such efforts in miniaturization bring with them new developments in materials and processing. Successful implementation of these efforts is, to a large extent, dependent on the proper understanding of the material properties, process technologies and reliability issues, through adequate analytical studies. The analytical instrumentation technology has, fortunately, kept pace with the basic requirements of devices with lateral dimensions in the micron/ submicron range and depths of the order of nonometers. Often, newer analytical techniques have emerged or the more conventional techniques have been adapted to meet the more stringent requirements. As such, a variety of analytical techniques are available today to aid an analyst in the efforts of VLSI process evaluation. Generally such analytical efforts are divided into the characterization of materials, evaluation of processing steps and the analysis of failures.

Electron microscopy study of reactively sputter-deposited Ti/N films on silicon

1992 ◽  
Vol 50 (2) ◽  
pp. 1362-1363
Author(s):  
V. C. Kannan ◽  
A. K. Singh ◽  
R. B. Irwin ◽  
S. Chittipeddi ◽  
F. D. Nkansah ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Large Scale ◽  
Hexagonal Phase ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Process Conditions ◽  
Tin Films ◽  
Wide Range ◽  
Fcc Phase ◽  
Circuits Vlsi

Titanium nitride (TiN) films have historically been used as diffusion barrier between silicon and aluminum, as an adhesion layer for tungsten deposition and as an interconnect material etc. Recently, the role of TiN films as contact barriers in very large scale silicon integrated circuits (VLSI) has been extensively studied. TiN films have resistivities on the order of 20μ Ω-cm which is much lower than that of titanium (nearly 66μ Ω-cm). Deposited TiN films show resistivities which vary from 20 to 100μ Ω-cm depending upon the type of deposition and process conditions. TiNx is known to have a NaCl type crystal structure for a wide range of compositions. Change in color from metallic luster to gold reflects the stabilization of the TiNx (FCC) phase over the close packed Ti(N) hexagonal phase. It was found that TiN (1:1) ideal composition with the FCC (NaCl-type) structure gives the best electrical property.

Direct Observation of Monolayer Zones in Al-wt 4% Cu

1990 ◽  
Vol 48 (1) ◽  
pp. 14-15
Author(s):  
B. Jouffrey ◽  
D. Dorignac ◽  
A. Bourret
Keyword(s):  
Solid Solution ◽  
Synchrotron Radiation ◽  
Direct Observation ◽  
Supersaturated Solid Solution ◽  
Original Model ◽  
X Ray ◽  
Image Position

Since the early works on GP zones and the model independently proposed by Preston and Guinier on the first steps of precipitation in supersaturated solid solution of aluminium containing a few percent of copper, many works have been performed to understand the structure of different stages in the sequence of precipitation.The scheme which is generally admitted can be drawn from a work by Phillips.In their original model Guinier and Preston analysed a GP zone as composed of a single (100) copperrich plane surrounded by aluminum atomic planes with a slightly shorter distance from the original plane than in the solid solution.From X-ray measurements it has also been shown that GP1 zones were not only copper monolayer zones. They could be up to a few atomic planes thick. Different models were proposed by Guinier, Gerold, Toman. Using synchrotron radiation, proposals have been recently made.

The Structure and Properties of MoSi2 Thin Film in Mos Process

1980 ◽  
Vol 38 ◽  
pp. 326-327
Author(s):  
C.K. Wu ◽  
P. Chang ◽  
N. Godinho
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
High Performance ◽  
Large Scale ◽  
Process Development ◽  
Structure And Properties ◽  
Metal Silicides ◽  
High Oxidation ◽  
Important Approach ◽  
High Oxidation Resistance

Recently, the use of refractory metal silicides as low resistivity, high temperature and high oxidation resistance gate materials in large scale integrated circuits (LSI) has become an important approach in advanced MOS process development (1). This research is a systematic study on the structure and properties of molybdenum silicide thin film and its applicability to high performance LSI fabrication.

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