X-RAY FLUORESCENCE ANALYSIS FOR ULTRA-LARGE SCALE INTEGRATED CIRCUITS

In the 1980ies Dr. Julia Asher-Greve conducted chemical and mineralogical material analysis on cylinder seals as a part of her SNF-funded project „Naturwissenschaftliche und typologische Untersuchungen an Rollsiegeln“. 1017 seals have been analysed using the non-destructive methods of EDS-XFA (energy dispersive X-ray fluorescence analysis) for chemical classification and XRF (X-ray diffraction) for mineralogical classification. This was one of the first large scale projects on Mesopotamian glyptic with its main focus on materiality rather than style, iconography or inscription as was usually the case when working on cylinder seals. Since then much work on the materiality of seals has been done, mostly by institutions such as the British Museum. This is because those institutions have access to large seal corpora and they either have the funds to pay for the costly analysis or possess the means to analyse the seals themselves. As I ‘inherited’ the unfinished project of Dr. Asher-Greve including the analysis (which still need to be interpreted), I am painfully aware of the difficulties and problems to be encountered with such old analysis. In my 10-minute talk I will give an insight to the chances and limitations of scientific material analysis on archaeological artefacts. For especially small and precious objects like cylinder seals need to be treated with the uttermost care and under no circumstances should they take damage in the process of being analysed.

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Some applications of electron beam microanalysis techniques in VLSI process evaluation

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010007463x ◽

1983 ◽

Vol 41 ◽

pp. 160-161

Author(s):

Simon Thomas

Keyword(s):

Integrated Circuits ◽

Process Evaluation ◽

Large Scale ◽

Technology Development ◽

Analytical Techniques ◽

Successful Implementation ◽

Analysis Of Failures ◽

Characterization Of Materials ◽

Circuits Vlsi

Trends in the technology development of very large scale integrated circuits (VLSI) have been in the direction of higher density of components with smaller dimensions. The scaling down of device dimensions has been not only laterally but also in depth. Such efforts in miniaturization bring with them new developments in materials and processing. Successful implementation of these efforts is, to a large extent, dependent on the proper understanding of the material properties, process technologies and reliability issues, through adequate analytical studies. The analytical instrumentation technology has, fortunately, kept pace with the basic requirements of devices with lateral dimensions in the micron/ submicron range and depths of the order of nonometers. Often, newer analytical techniques have emerged or the more conventional techniques have been adapted to meet the more stringent requirements. As such, a variety of analytical techniques are available today to aid an analyst in the efforts of VLSI process evaluation. Generally such analytical efforts are divided into the characterization of materials, evaluation of processing steps and the analysis of failures.

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An x-ray microprobe based upon a close-coupled focal-spot / glass capillary arrangement

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100133424 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1758-1759

Author(s):

D. A. Carpenter ◽

M. A. Taylor

Keyword(s):

Imaging Techniques ◽

Fluorescence Analysis ◽

High Sensitivity ◽

Specimen Preparation ◽

X Rays ◽

Glass Capillary ◽

Close Coupling ◽

X Ray ◽

Point To Point ◽

Beam Damage

The development of intense sources of x rays has led to renewed interest in the use of microbeams of x rays in x-ray fluorescence analysis. Sparks pointed out that the use of x rays as a probe offered the advantages of high sensitivity, low detection limits, low beam damage, and large penetration depths with minimal specimen preparation or perturbation. In addition, the option of air operation provided special advantages for examination of hydrated systems or for nondestructive microanalysis of large specimens.The disadvantages of synchrotron sources prompted the development of laboratory-based instrumentation with various schemes to maximize the beam flux while maintaining small point-to-point resolution. Nichols and Ryon developed a microprobe using a rotating anode source and a modified microdiffractometer. Cross and Wherry showed that by close-coupling the x-ray source, specimen, and detector, good intensities could be obtained for beam sizes between 30 and 100μm. More importantly, both groups combined specimen scanning with modern imaging techniques for rapid element mapping.

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Electron microscopy study of reactively sputter-deposited Ti/N films on silicon

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100131449 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1362-1363

Author(s):

V. C. Kannan ◽

A. K. Singh ◽

R. B. Irwin ◽

S. Chittipeddi ◽

F. D. Nkansah ◽

...

Keyword(s):

Integrated Circuits ◽

Large Scale ◽

Hexagonal Phase ◽

Microscopy Study ◽

Electron Microscopy Study ◽

Process Conditions ◽

Tin Films ◽

Wide Range ◽

Fcc Phase ◽

Circuits Vlsi

Titanium nitride (TiN) films have historically been used as diffusion barrier between silicon and aluminum, as an adhesion layer for tungsten deposition and as an interconnect material etc. Recently, the role of TiN films as contact barriers in very large scale silicon integrated circuits (VLSI) has been extensively studied. TiN films have resistivities on the order of 20μ Ω-cm which is much lower than that of titanium (nearly 66μ Ω-cm). Deposited TiN films show resistivities which vary from 20 to 100μ Ω-cm depending upon the type of deposition and process conditions. TiNx is known to have a NaCl type crystal structure for a wide range of compositions. Change in color from metallic luster to gold reflects the stabilization of the TiNx (FCC) phase over the close packed Ti(N) hexagonal phase. It was found that TiN (1:1) ideal composition with the FCC (NaCl-type) structure gives the best electrical property.

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XRMF applications of a monolithic, polycapillary, focusing x-ray optic

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100163666 ◽

1996 ◽

Vol 54 ◽

pp. 240-241

Author(s):

D. A. Carpenter ◽

Ning Gao ◽

G. J. Havrilla

Keyword(s):

Trace Elements ◽

Point Source ◽

Focal Spot ◽

Fluorescence Analysis ◽

X Rays ◽

Focal Distance ◽

Spot Diameter ◽

X Ray ◽

Focal Spot Diameter

A monolithic, polycapillary, x-ray optic was adapted to a laboratory-based x-ray microprobe to evaluate the potential of the optic for x-ray micro fluorescence analysis. The polycapillary was capable of collecting x-rays over a 6 degree angle from a point source and focusing them to a spot approximately 40 µm diameter. The high intensities expected from this capillary should be useful for determining and mapping minor to trace elements in materials. Fig. 1 shows a sketch of the capillary with important dimensions.The microprobe had previously been used with straight and with tapered monocapillaries. Alignment of the monocapillaries with the focal spot was accomplished by electromagnetically scanning the focal spot over the beveled anode. With the polycapillary it was also necessary to manually adjust the distance between the focal spot and the polycapillary.The focal distance and focal spot diameter of the polycapillary were determined from a series of edge scans.

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The Structure and Properties of MoSi2 Thin Film in Mos Process

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s1431927600001379 ◽

1980 ◽

Vol 38 ◽

pp. 326-327

Author(s):

C.K. Wu ◽

P. Chang ◽

N. Godinho

Keyword(s):

Thin Film ◽

Integrated Circuits ◽

High Performance ◽

Large Scale ◽

Process Development ◽

Structure And Properties ◽

Metal Silicides ◽

High Oxidation ◽

Important Approach ◽

High Oxidation Resistance

Recently, the use of refractory metal silicides as low resistivity, high temperature and high oxidation resistance gate materials in large scale integrated circuits (LSI) has become an important approach in advanced MOS process development (1). This research is a systematic study on the structure and properties of molybdenum silicide thin film and its applicability to high performance LSI fabrication.

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