scholarly journals Pengaruh Lama Penumbuhan Titanium Dioksida Didoping Copper Terhadap Energi Gap

2017 ◽  
Vol 8 (2) ◽  
pp. 60-63
Author(s):  
Ade Usra Berli ◽  
Dahyunir Dahlan ◽  
Akrajas Ali Umar

Deposisi lapisan TiO2 didoping Cu telah berhasil ditumbuhkan dengan menggunakan metoda Liquid Phase Deposition (LPD). Lapisan TiO2-Cu dibuat dengan menggunakan material Ammonium hexafluorotitanate ((NH4)2TiF6), Copper (II) Nitrate hydrate (Cu(NO3)2·xH2O), dan Hexamethylen tetramine (C6H12N4). Dalam penelitian ini dilakukan variasi lama penumbuhan lapisan yaitu 3 jam, 5 jam, 7 jam dan 10 jam. Lapisan TiO2-Cu dikarakterisasi menggunakan Spektrometri Ultraviolet-Visible (UV-Vis) untuk menentukan energi gap melalui spektra difusi reflektansi. Hasil energi gap yang diperoleh pada lapisan TiO2-Cu dengan variasi lama penumbuhan yaitu antara 3,26-3,30 eV.Kata kunci: Titanium dioksida (TiO2), Liquid Phase Deposition (LPD) dan doping 

2015 ◽  
Vol 1120-1121 ◽  
pp. 419-423
Author(s):  
Cai Xia Lei ◽  
X.L. Jiang ◽  
Y. Liu ◽  
X. Liu ◽  
Y.T. Ma ◽  
...  

In this paper, the hydrothermal-assisted liquid phase deposition (HT-LPD) method has been developed to prepare TiO2 films. The crystalline structures and morphologies of as-prepared TiO2 films were analyzed using an X-ray diffractometer (XRD) and scanning electron microscope (SEM). It was found that the HT-LPD TiO2 film showed good crystallinity with preferrred orientation along c-axis. Moreover, the as-prepared TiO2 films consisted of two layers, with the tiny nanoparticles as the underlying layer and the flower-like clusters as the upper layer. The photoelectrochemical measurements revealed that, when illuminated by the white light, the HT-LPD TiO2 films exhibited a more negative photopotential value and an increased photocurrent value with elevated reaction temperature, excepting for the sample prerared at 150 °C. In summary, the TiO2 films prepared by the improved LPD method could be served as the promising photoanode for the photoelectrochemical applications.


2010 ◽  
Vol 105-106 ◽  
pp. 270-273
Author(s):  
Hui Jun Ren ◽  
Guo Qiang Tan ◽  
Hong Yan Miao ◽  
Ya Yu Song ◽  
Ao Xia

In this article, (NH4)2TiF6, SrNO3 and H3BO3 were used as raw materials to prepare the precursor solution with the ratio of AHFT/SN/BA=1:1:3. The thin films of SrTiO3 were fabricated on the functional silicon substrates (100) by self-assembled monolayers (SAMs) with the liquid phase deposition (LPD). This article also studied the effects of wet state and the deposition temperature of the precursor solution before and after the functionalization of silicon substrate on the thin film growth. The results indicated that after the immersion in OTS for 30min, the surface contact angle of the silicon substrate changed from 24.64° to 100.91°. The substrate appeared hydrophobic property and it was irradiated by UV light for 30min. Then the surface contact angle of the substrate decreased to 5.00°. The substrate appeared hydrophilicity. The concentration of the precursor solution was 0.025 mol/L, the deposition temperature was 40°C and the deposition time was 9h, which were all helpful to SrTiO3 crystallization. XRD and SEM were used to characterize the physical phase of thin film and surface morphology at 600 °C with annealing and heat retaining for 2h. The results indicated that the thin film prepared by the mono-crystal Si substrate was SrTiO3 thin film with better crystalline. On the crystal surfaces of (110), (100), (200) and (211), there appeared the obvious diffraction peaks. The SrTiO3 grains on the surface had the clear outline and were regular and long columnar crystals.


2008 ◽  
Vol 205 (10) ◽  
pp. 2405-2408 ◽  
Author(s):  
K. Y. S. Chan ◽  
G. K. L. Goh ◽  
M. Y. Han

2015 ◽  
Vol 584 ◽  
pp. 248-252 ◽  
Author(s):  
Dong-Sing Wuu ◽  
Che-Chun Lin ◽  
Chao-Nan Chen ◽  
Hong-Hsiu Lee ◽  
Jung-Jie Huang

2021 ◽  
Vol 314 ◽  
pp. 172-177
Author(s):  
Yuta Sasaki ◽  
Yousuke Hanawa ◽  
Masayuki Otsuji ◽  
Naozumi Fujiwara ◽  
Masahiko Kato ◽  
...  

Damage-free drying becomes increasingly difficult with the scaling of semiconductor devices. In this work, we studied a new sublimation drying technology for 3nm node and beyond. In order to investigate the collapse factor by conventional sublimation drying, we observed the pattern with cryo-SEM and revealed that the collapse occurred when the liquid film on the substrate solidified. Based on this result, we considered that it was important to deposit a solidified film uniformly from the substrate side to suppress collapse. Two key process parameters were evaluated to achieve the uniform formation of the solidified film. One is interfacial free energy and the other is film thickness of solution just before solidification. By optimizing two key parameters, it was successfully demonstrated to suppress pattern collapse of challenging devices. In this paper, we report on a new drying method: sublimation drying by LPD (Liquid-phase deposition).


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